Fabrication and characteristics of GaN-based light-emitting diodes with a reduced graphene oxide current-spreading layer.

A reduced graphene oxide (GO) layer was produced on undoped and n-type GaN, and its effect on the current- and heat-spreading properties of GaN-based light-emitting diodes (LEDs) was studied. The reduced GO inserted between metal electrode and GaN semiconductor acted as a conducting layer and enhanced lateral current flow in the device. Especially, introduction of the reduced GO layer on the n-type GaN improved the electrical performance of the device, relative to that of conventional LEDs, due to a decrease in the series resistance of the device. The enhanced current-spreading was further of benefit, giving the device a higher light output power and a lower junction temperature at high injection currents. These results therefore indicate that reduced GO can be a suitable current and heat-spreading layer for GaN-based LEDs.

Enhanced optical output power by the silver localized surface plasmon coupling through side facets of micro-hole patterned InGaN/GaN light-emitting diodes.

Light extraction efficiency of GaN-based light emitting diodes were significantly enhanced using silver nanostructures incorporated in periodic micro-hole patterned multi quantum wells (MQWs). Our results show an enhancement of 60% in the wall-plug efficiency at an injection current of 100 mA when Ag nano-particles were deposited on side facet of MQWs passivated with SiO2. This improvement can be attributed to an increase in the spontaneous emission rate through resonance coupling between localized surface plasmons in Ag nano-particles and the excitons in MQWs.

Size dependence of silica nanospheres embedded in 385 nm ultraviolet light-emitting diodes on a far-field emission pattern.

We demonstrate that the use of silica nanospheres (SNs) with sizes close to the emission wavelength of light-emitting diodes (LEDs) can enhance the light output power and manipulate the far-field emission pattern. Near-ultraviolet (NUV)-LEDs grown on a patterned sapphire substrate embedded with 300 nm SNs show a three times higher light output power than that without SNs, when measured through the top side. For far-field emission measurements, the LEDs embedded with 300 nm SNs show the significant increase of front emission due to the improved crystal quality of epitaxial films as well as the increase of Mie scattering effect of SNs. These experimental results indicate the important role of the size of embedded SNs in enhancing the light output power for NUV-LEDs.

Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern.

The future of solid-state lighting relies on how the performance parameters will be improved further for developing high-brightness light-emitting diodes. Eventually, heat removal is becoming a crucial issue because the requirement of high brightness necessitates high-operating current densities that would trigger more joule heating. Here we demonstrate that the embedded graphene oxide in a gallium nitride light-emitting diode alleviates the self-heating issues by virtue of its heat-spreading ability and reducing the thermal boundary resistance. The fabrication process involves the generation of scalable graphene oxide microscale patterns on a sapphire substrate, followed by its thermal reduction and epitaxial lateral overgrowth of gallium nitride in a metal-organic chemical vapour deposition system under one-step process. The device with embedded graphene oxide outperforms its conventional counterpart by emitting bright light with relatively low-junction temperature and thermal resistance. This facile strategy may enable integration of large-scale graphene into practical devices for effective heat removal.

Fast and simple reduction of graphene oxide in various organic solvents using microwave irradiation.

The fabrication of graphene has been widely studied and chemical reduction is considered the most suitable approach to achieve large-scale production and graphene functionalization due to its versatility of chemical routes. We report here a fast and simple reduction of graphene oxide in various organic solvents using microwave irradiation. The reduction can be completed in several minutes, and the oxygen content and conductivity (10,000 S/m) of the reduced graphene oxide were comparable to the previously reported results which reported between 1 hr and 24 hrs for the reduction. We also found that an amide group containing a solvent like NMP or DMF reduced graphene oxide (GO) more effectively than did other solvents. Further, free radicals generated from NMP significantly enhanced deoxygenation of graphene oxide. Moreover, this approach is a non-toxic and environmentally-friendly method to obtain highly conductive reduced GO for a wide range of applications including graphene-based composites, batteries, and electrodes for super-capacitors.

Controlled growth of ZnO nanomaterials via hydrothermal method: effect of buffer layer.

We report a facile solution-based method for the controlled growth of ZnO nanomaterials on an AIN/Si substrate. A ZnO buffer layer was coated on the substrate before growing the ZnO nano-materials. The shape of the ZnO nanomaterials changed from nanosheet to nanorod as the thickness of the ZnO buffer layer increased. Doping of the buffer layer with Ga decreased the average grain size of the ZnO buffer layer, which resulted in the growth of longer and thinner ZnO nanorods on the buffer layer. The UV sensing results of the ZnO nanorod-based device revealed that the aspect ratio of the ZnO nanorods is crucial for enhancing the performance of the device.

Enhanced light output power of near UV light emitting diodes with graphene / indium tin oxide nanodot nodes for transparent and current spreading electrode.

We report GaN-based near ultraviolet (UV) light emitting diode (LED) that combines indium tin oxide (ITO) nanodot nodes with two-dimensional graphene film as a UV-transparent current spreading electrode (TCSE) to give rise to excellent UV emission efficiency. The light output power of 380 nm emitting UV-LEDs with graphene film on ITO nanodot nodes as TCSE was enhanced remarkably compared to conventional TCSE. The increase of the light output power is attributed to high UV transmittance of graphene, effective current spreading and injection, and texturing effect by ITO nanodots.

Synthesis of the chemically converted graphene xerogel with superior electrical conductivity.

The ultra-low density graphene xerogel was prepared through the chemical reduction of graphene oxide suspension using a hypophosphorous acid-iodine mixture. The chemically converted graphene xerogel (CCGX) exhibited superior electrical conductivity (up to 500 S m(-1)) and high C/O atomic ratio (14.7), which were the highest values reported for the graphene-based xerogel.

One-step synthesis of superior dispersion of chemically converted graphene in organic solvents.

Chemically converted graphene that was reduced with phenylhydrazine was highly dispersed in organic solvents, and its "paper" prepared by filtration of the reduced graphene possessed an electrical conductivity value as high as 20,950 S m(-1).