Magnetic Proximity Coupling of Quantum Emitters in WSe2 to van der Waals Ferromagnets.

The realization of on-chip quantum networks requires tunable quantum states to encode information carriers on them. We show that Cr2Ge2Te6 (CGT) as a van der Waals ferromagnet can enable magnetic proximity coupling to site-controlled quantum emitters in WSe2, giving rise to ultrahigh exciton g factors up to 20 ± 1. By comparing the same site-controlled quantum emitter before and after ferromagnetic proximity coupling, we also demonstrate a technique to directly measure the resulting magnetic exchange field (MEF) strength. Experimentally determined values of MEF up to 1.2 ± 0.2 meV in the saturation regime approach the theoretical limit of 2.1 meV that was determined from density functional theory calculations of the CGT/WSe2 heterostructure. Our work extends the on-chip control of magneto-optical properties of excitons via van der Waals heterostructures to solid-state quantum emitters.

Phonon Anharmonicity in Few-Layer Black Phosphorus.

We report a temperature-dependent Raman spectroscopy study of few-layer black phosphorus (BP) with varied incident polarization and sample thickness. The Raman-active modes Ag1, B2g, and Ag2 exhibit a frequency downshift, while their line width tends to increase with increasing temperature. To understand the details of these phenomena, we perform first-principles density functional theory calculations on freestanding monolayer BP. The effect of thermal expansion is included by constraining the temperature-dependent lattice constant. The study of the temperature-induced shift of the phonon frequencies is carried out using ab initio molecular dynamics simulations. The normal-mode frequencies are calculated by identifying the peak positions from the magnitude of the Fourier transform of the total velocity autocorrelation. Anharmonicity induces a frequency shift for each individual mode, and the three- and four-phonon process coefficients are extracted. These results are compared with those obtained from many-body perturbation theory, giving access to phonon lifetimes and lattice thermal conductivity. We establish that the frequency downshift is primarily due to phonon-phonon scattering while thermal expansion only contributes indirectly by renormalizing the phonon-phonon scattering. Overall, the theoretical results are in excellent agreement with experiment, thus showing that controlling phonon scattering in BP could result in better thermoelectric devices or transistors that dissipate heat more effectively when confined to the nanoscale.

An unexpected organometallic intermediate in surface-confined Ullmann coupling.

Ullmann coupling or, more generally, dehalogenative aryl-aryl coupling, is one of the most widely exploited chemical reactions to obtain one- and two-dimensional polymers on metal surfaces. It is generally described as a two-step reaction: (i) dehalogenation, resulting in the formation of a stable intermediate organometallic phase and subsequent (ii) C-C coupling. The topology of the resulting polymer depends on the number and positions of the halogen atoms in the haloaromatic precursor, although its orientation and order are determined by the structure of the intermediate phase. Hitherto, only one intermediate structure, identified as an organometallic (OM) phase, has been reported for such a reaction. Here we demonstrate the formation of two distinct OM phases during the temperature-induced growth of poly(para-phenylene) from 1,4-dibromobenzene precursors on Cu(110). Beyond the already known linear-OM chains, we show that a phase reorganization to a chessboard-like 2D-OM can be activated in a well-defined temperature range. This new intermediate phase, revealed only when the reaction is carried out at low molecular coverages, was characterized by X-ray photoelectron spectroscopy, scanning tunneling microscopy and near-edge X-ray absorption fine structure spectroscopy, and modeled by density functional theory calculations. Our data show that the 2D-OM remains stable after cooling down the sample and is stabilized by four-Cu clusters at each node. The observation of such unexpected intermediate phase shows the complexity of the mechanisms underlying on-surface synthesis and broadens the understanding of Ullmann coupling, which continues to be astonishing despite its extensive use.

Shell model extension to the valence force field: application to single-layer black phosphorus.

We propose an extension of the traditional valence force field model to allow for the effect of electronic polarization to be included in the inter-atomic potential. Using density functional theory as a reference, this model is parameterized for the specific case of single-layer black phosphorus by fitting the phonon dispersion relation over the entire Brillouin zone. The model is designed to account for the effect of induced dipole interaction on the long-wavelength (|q[combining right harpoon above]| → 0) modes for the case of homopolar covalent crystals. We demonstrate that the near Γ-point frequencies of the IR-active modes are substantially damped by the inclusion of the induced dipole interaction, in agreement with experiment. The fitting procedure outlined here allows for this model to be adapted to other materials, including but not limited to two-dimensional crystals.

Engineering of robust topological quantum phases in graphene nanoribbons.

Boundaries between distinct topological phases of matter support robust, yet exotic quantum states such as spin-momentum locked transport channels or Majorana fermions1-3. The idea of using such states in spintronic devices or as qubits in quantum information technology is a strong driver of current research in condensed matter physics4-6. The topological properties of quantum states have helped to explain the conductivity of doped trans-polyacetylene in terms of dispersionless soliton states7-9. In their seminal paper, Su, Schrieffer and Heeger (SSH) described these exotic quantum states using a one-dimensional tight-binding model10,11. Because the SSH model describes chiral topological insulators, charge fractionalization and spin-charge separation in one dimension, numerous efforts have been made to realize the SSH Hamiltonian in cold-atom, photonic and acoustic experimental configurations12-14. It is, however, desirable to rationally engineer topological electronic phases into stable and processable materials to exploit the corresponding quantum states. Here we present a flexible strategy based on atomically precise graphene nanoribbons to design robust nanomaterials exhibiting the valence electronic structures described by the SSH Hamiltonian15-17. We demonstrate the controlled periodic coupling of topological boundary states18 at junctions of graphene nanoribbons with armchair edges to create quasi-one-dimensional trivial and non-trivial electronic quantum phases. This strategy has the potential to tune the bandwidth of the topological electronic bands close to the energy scale of proximity-induced spin-orbit coupling19 or superconductivity20, and may allow the realization of Kitaev-like Hamiltonians3 and Majorana-type end states21.

Periodic Arrays of Phosphorene Nanopores as Antidot Lattices with Tunable Properties.

A tunable band gap in phosphorene extends its applicability in nanoelectronic and optoelectronic applications. Here, we propose to tune the band gap in phosphorene by patterning antidot lattices, which are periodic arrays of holes or nanopores etched in the material, and by exploiting quantum confinement in the corresponding nanoconstrictions. We fabricated antidot lattices with radii down to 13 nm in few-layer black phosphorus flakes protected by an oxide layer and observed suppression of the in-plane phonon modes relative to the unmodified material via Raman spectroscopy. In contrast to graphene antidots, the Raman peak positions in few-layer BP antidots are unchanged, in agreement with predicted power spectra. We also use DFT calculations to predict the electronic properties of phosphorene antidot lattices and observe a band gap scaling consistent with quantum confinement effects. Deviations are attributed primarily to self-passivating edge morphologies, where each phosphorus atom has the same number of bonds per atom as the pristine material so that no dopants can saturate dangling bonds. Quantum confinement is stronger for the zigzag edge nanoconstrictions between the holes as compared to those with armchair edges, resulting in a roughly bimodal band gap distribution. Interestingly, in two of the antidot structures an unreported self-passivating reconstruction of the zigzag edge endows the systems with a metallic component. The experimental demonstration of antidots and the theoretical results provide motivation to further scale down nanofabrication of antidots in the few-nanometer size regime, where quantum confinement is particularly important.

Quantum confinement in black phosphorus-based nanostructures.

The modification of an idealized infinite bulk system by dimensional reduction or structural distortion results in quantum confinement effects (QCEs). For example, dimensional reduction of a black phosphorus structure leads to the realization of few-layer systems, creation of edges and surfaces, nanoribbons, quantum dots, and antidot lattices while structural distortion involves simple bending (including nanotubes) and rippling. Black phosphorus ('phosphorene' in the single-layer limit) has been of recent interest due to its relatively large charge carrier mobility and moderate semiconducting band gap, which remains direct irrespective of the number of layers. In this review the state-of-the-art properties of black phosphorus in its dimensionally reduced and structurally distorted forms are discussed, with emphasis on how quantum confinement impacts the material's properties.

Nonmagnetic Quantum Emitters in Boron Nitride with Ultranarrow and Sideband-Free Emission Spectra.

Hexagonal boron nitride (hBN) is an emerging material in nanophotonics and an attractive host for color centers for quantum photonic devices. Here, we show that optical emission from individual quantum emitters in hBN is spatially correlated with structural defects and can display ultranarrow zero-phonon line width down to 45 µeV if spectral diffusion is effectively eliminated by proper surface passivation. We demonstrate that undesired emission into phonon sidebands is largely absent for this type of emitter. In addition, magneto-optical characterization reveals cycling optical transitions with an upper bound for the g-factor of 0.2 ± 0.2. Spin-polarized density functional theory calculations predict possible commensurate transitions between like-spin electron states, which are in excellent agreement with the experimental nonmagnetic defect center emission. Our results constitute a step toward the realization of narrowband quantum light sources and the development of spin-photon interfaces within 2D materials for future chip-scale quantum networks.

Controlled Sculpture of Black Phosphorus Nanoribbons.

Black phosphorus (BP) is a highly anisotropic allotrope of phosphorus with great promise for fast functional electronics and optoelectronics. We demonstrate the controlled structural modification of few-layer BP along arbitrary crystal directions with sub-nanometer precision for the formation of few-nanometer-wide armchair and zigzag BP nanoribbons. Nanoribbons are fabricated, along with nanopores and nanogaps, using a combination of mechanical-liquid exfoliation and in situ transmission electron microscopy (TEM) and scanning TEM nanosculpting. We predict that the few-nanometer-wide BP nanoribbons realized experimentally possess clear one-dimensional quantum confinement, even when the systems are made up of a few layers. The demonstration of this procedure is key for the development of BP-based electronics, optoelectronics, thermoelectrics, and other applications in reduced dimensions.