Universal scaling law for chiral antiferromagnetism.

The chiral antiferromagnetic (AFM) materials, which have been widely investigated due to their rich physics, such as non-zero Berry phase and topology, provide a platform for the development of antiferromagnetic spintronics. Here, we find two distinctive anomalous Hall effect (AHE) contributions in the chiral AFM Mn3Pt, originating from a time-reversal symmetry breaking induced intrinsic mechanism and a skew scattering induced topological AHE due to an out-of-plane spin canting with respect to the Kagome plane. We propose a universal AHE scaling law to explain the AHE resistivity ( ρ A H ) in this chiral magnet, with both a scalar spin chirality (SSC)-induced skew scattering topological AHE term, a s k and non-collinear spin-texture induced intrinsic anomalous Hall term, b i n . We found that a s k and b i n can be effectively modulated by the interfacial electron scattering, exhibiting a linear relation with the inverse film thickness. Moreover, the scaling law can explain the anomalous Hall effect in various chiral magnets and has far-reaching implications for chiral-based spintronics devices.

Intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi2Te4.

Achieving spin-pinning at the interface of hetero-bilayer ferromagnet/antiferromagnet structures in conventional exchange bias systems can be challenging due to difficulties in interface control and the weakening of spin-pinning caused by poor interface quality. In this work, we propose an alternative approach to stabilize the exchange interaction at the interface of an uncompensated antiferromagnet by utilizing a gradient of interlayer exchange coupling. We demonstrate this exchange interaction through a designed field training protocol in the odd-layer topological antiferromagnet MnBi2Te4. Our results reveal a remarkable field-trained exchange bias of up to ~ 400 mT, which exhibits high repeatability and can be easily reset by a large training field. Notably, this field-trained exchange bias effect persists even with zero-field initialization, presenting a stark contrast to the traditional field-cooled exchange bias. The highly tunable exchange bias observed in this single antiferromagnet compound, without the need for an additional magnetic layer, provides valuable insight into the exchange interaction mechanism. These findings pave the way for the systematic design of topological antiferromagnetic spintronics.

A Streptococcus suis Strain Δcps/ssna-msly (P353L)-SC19 Provides Cross-Protection against Serotypes 2 and 9 Strain Challenges in a Mouse Model.

Streptococcus suis is an important zoonotic pathogen that mainly causes meningitis, septicemia, and arthritis. Due to the limited cross-protection between numerous serotypes, the existing inactive vaccines in clinical use fail to offer sufficient protection. In this study, a gene deletion-attenuated strain Δcps/ssna-msly (P353L)-SC-19 was constructed by deleting cps and ssna genes from the epidemic strain SC-19 with a mutation of SLY (P353L). The safety of Δcps/ssna-msly (P353L)-SC-19 was confirmed in both in vitro and in vivo experiments. We further demonstrated that immunization with Δcps/ssna-msly (P353L)-SC-19 induced significant cellular immunity and humoral immunity in mice and protected against infections caused by type 2 strain SC-19 (100% protection) and type 9 strain S29 (50% protection), while also preventing meningitis induced by S29. This study highlights the potential of using CPS-deficient strains to achieve cross-protection against different Streptococcus suis serotypes and develop a promising universal live vaccine.

Electric field manipulation of spin chirality and skyrmion dynamic.

The Dzyaloshinskii-Moriya interaction (DMI) is an antisymmetric exchange interaction that stabilizes spin chirality. One scientific and technological challenge is understanding and controlling the interaction between spin chirality and electric field. In this study, we investigate an unconventional electric field effect on interfacial DMI, skyrmion helicity, and skyrmion dynamics in a system with broken inversion symmetry. We design heterostructures with a 3d-5d atomic orbital interface to demonstrate the gate bias control of the DMI energy and thus transform the DMI between opposite chiralities. Furthermore, we use this voltage-controlled DMI (VCDMI) to manipulate the skyrmion spin texture. As a result, a type of intermediate skyrmion with a unique helicity is created, and its motion can be controlled and made to go straight. Our work shows the effective control of spin chirality, skyrmion helicity, and skyrmion dynamics by VCDMI. It promotes the emerging field of voltage-controlled chiral interactions and voltage-controlled skyrmionics.

Electric-Field Control of Spin Diffusion Length and Electric-Assisted D'yakonov-Perel' Mechanism in Ultrathin Heavy Metal and Ferromagnetic Insulator Heterostructure.

Electric-field control of spin dynamics is significant for spintronic device applications. Thus far, effectively electric-field control of magnetic order, magnetic damping factor and spin-orbit torque (SOT) has been studied in magnetic materials, but the electric field control of spin relaxation still remains unexplored. Here, we use ionic liquid gating to control spin-related property in the ultra-thin (4 nm) heavy metal (HM) platinum (Pt) and ferromagnetic insulator (FMI) yttrium iron garnet (Y3Fe5O12, YIG) heterostructure. It is found that the anomalous Hall effect (AHE), spin relaxation time and spin diffusion length can be effectively controlled by the electric field. The anomalous Hall resistance is almost twice as large as at 0 voltage after applying a small voltage of 5.5 V. The spin relaxation time can vary by more than 50 percent with the electric field, from 41.6 to 64.5 fs. In addition, spin relaxation time at different gate voltage follows the reciprocal law of the electron momentum scattering time, which indicates that the D'yakonov-Perel' mechanism is dominant in the Pt/YIG system. Furthermore, the spin diffusion length can be effectively controlled by an ionic gate, which can be well explained by voltage-modulated interfacial spin scattering. These results help us to improve the interface spin transport properties in magnetic materials, with great contributions to the exploration of new physical mechanisms and spintronics device.

Distinguishing the Two-Component Anomalous Hall Effect from the Topological Hall Effect.

In transport, the topological Hall effect (THE) presents itself as nonmonotonic features (or humps and dips) in the Hall signal and is widely interpreted as a sign of chiral spin textures, like magnetic skyrmions. However, when the anomalous Hall effect (AHE) is also present, the coexistence of two AHEs could give rise to similar artifacts, making it difficult to distinguish between genuine THE with AHE and two-component AHE. Here, we confirm genuine THE with AHE by means of transport and magneto-optical Kerr effect (MOKE) microscopy, in which magnetic skyrmions are directly observed, and find that genuine THE occurs in the transition region of the AHE. In sharp contrast, the artifact "THE" or two-component AHE occurs well beyond the saturation of the "AHE component" (under the false assumption of THE + AHE). Furthermore, we distinguish artifact "THE" from genuine THE by three methods: (1) minor loops, (2) temperature dependence, and (3) gate dependence. Minor loops of genuine THE with AHE are always within the full loop, while minor loops of the artifact "THE" may reveal a single loop that cannot fit into the "AHE component". In addition, the temperature or gate dependence of the artifact "THE" may also be accompanied by a polarity change of the "AHE component", as the nonmonotonic features vanish, while the temperature dependence of genuine THE with AHE reveals no such change. Our work may help future researchers to exercise caution and use these methods for careful examination in order to ascertain the genuine THE.

A thermodynamic core using voltage-controlled spin-orbit-torque magnetic tunnel junctions.

We present a magnetic implementation of a thermodynamic computing fabric. Magnetic devices within computing cores harness thermodynamics through its voltage-controlled thermal stability; while the evolution of network states is guided by the spin-orbit-torque effect. We theoretically derive the dynamics of the cores and show that the computing fabric can successfully compute ground states of a Boltzmann Machine. Subsequently, we demonstrate the physical realization of these devices based on a CoFeB-MgO magnetic tunnel junction structure. The results of this work pave the path towards the realization of highly efficient, high-performance thermodynamic computing hardware. Finally, this paper will also give a perspective of computing beyond thermodynamic computing.

Chiral Symmetry Breaking for Deterministic Switching of Perpendicular Magnetization by Spin-Orbit Torque.

Symmetry breaking is a characteristic to determine which branch of a bifurcation system follows upon crossing a critical point. Specifically, in spin-orbit torque (SOT) devices, a fundamental question arises: how can the symmetry of the perpendicular magnetic moment be broken by the in-plane spin polarization? Here, we show that the chiral symmetry breaking by the antisymmetric Dzyaloshinskii-Moriya interaction (DMI) can induce the deterministic SOT switching of the perpendicular magnetization. By introducing a gradient of saturation magnetization or magnetic anisotropy, the dynamic noncollinear spin textures are formed under the current-driven SOT, and thus, the chiral symmetry of these dynamic spin textures is broken by the DMI, resulting in the deterministic magnetization switching. We introduce a strategy to induce an out-of-plane (z) gradient of magnetic properties as a practical solution for the wafer-scale manufacture of SOT devices.

Ferrimagnetic Skyrmions in Topological Insulator/Ferrimagnet Heterostructures.

Magnetic skyrmions are topologically nontrivial chiral spin textures that have potential applications in next-generation energy-efficient and high-density spintronic devices. In general, the chiral spins of skyrmions are stabilized by the noncollinear Dzyaloshinskii-Moriya interaction (DMI), originating from the inversion symmetry breaking combined with the strong spin-orbit coupling (SOC). Here, the strong SOC from topological insulators (TIs) is utilized to provide a large interfacial DMI in TI/ferrimagnet heterostructures at room temperature, resulting in small-size (radius ≈ 100 nm) skyrmions in the adjacent ferrimagnet. Antiferromagnetically coupled skyrmion sublattices are observed in the ferrimagnet by element-resolved scanning transmission X-ray microscopy, showing the potential of a vanishing skyrmion Hall effect and ultrafast skyrmion dynamics. The line-scan spin profile of the single skyrmion shows a Néel-type domain wall structure and a 120 nm size of the 180° domain wall. This work demonstrates the sizable DMI and small skyrmions in TI-based heterostructures with great promise for low-energy spintronic devices.

Deterministic Spin-Orbit Torque Switching by a Light-Metal Insertion.

Spin-orbit torque (SOT) switching of magnetization is a promising emerging technology for nonvolatile spintronic memory and logic applications. However, deterministic switching of perpendicular magnetization with SOTs requires an additional symmetry breaking, which is typically provided by an external magnetic field, making it impractical for applications. In this work, we disclose that by the insertion of a slightly asymmetric light-metal layer at the heavy metal-ferromagnet interface of SOT heterostructures, current-induced out-of-plane effective magnetic fields are introduced that enable deterministic switching without an external magnetic field. We obtain uniform perpendicular magnetic anisotropy and switching current density despite the asymmetry of the light-metal layer, and we show the scalability of our approach by studying device sizes that differ by 2 orders of magnitude. Our work provides a practical route for utilization of SOTs for magnetization switching on the wafer scale and paves the way for the practical application of SOT-based technology.

Room-Temperature Spin-Orbit Torque from Topological Surface States.

Spin-momentum locked surface states in topological insulators (TIs) provide a promising route for achieving high spin-orbit torque (SOT) efficiency beyond the bulk spin-orbit coupling in heavy metals (HMs). However, in previous works, there is a huge discrepancy among the quantitative SOTs from TIs in various systems determined by different methods. Here, we systematically study the SOT in the TI(HM)/Ti/CoFeB/MgO systems by the same method, and make a conclusive assessment of SOT efficiency for TIs and HMs. Our results demonstrate that TIs show more than one order of magnitude higher SOT efficiency than HMs even at room temperature, at the same time the switching current density as low as 5.2×10^{5} A cm^{-2} is achieved with (Bi_{1-x}Sb_{x})_{2}Te_{3}. Furthermore, we investigate the relationship between SOT efficiency and the position of Fermi level in (Bi_{1-x}Sb_{x})_{2}Te_{3}, where the SOT efficiency is significantly enhanced near the Dirac point, with the most insulating bulk and conducting surface states, indicating the dominating SOT contribution from topological surface states. This work unambiguously demonstrates the ultrahigh SOT efficiency from topological surface states.

Spin-Orbit Torque Switching of a Nearly Compensated Ferrimagnet by Topological Surface States.

Utilizing spin-orbit torque (SOT) to switch a magnetic moment provides a promising route for low-power-dissipation spintronic devices. Here, the SOT switching of a nearly compensated ferrimagnet Gdx (FeCo)1- x by the topological insulator [Bi2 Se3 and (BiSb)2 Te3 ] is investigated at room temperature. The switching current density of (BiSb)2 Te3 (1.20 × 105 A cm-2 ) is more than one order of magnitude smaller than that in conventional heavy-metal-based structures, which indicates the ultrahigh efficiency of charge-spin conversion (>1) in topological surface states. By tuning the net magnetic moment of Gdx (FeCo)1- x via changing the composition, the SOT efficiency has a significant enhancement (6.5 times) near the magnetic compensation point, and at the same time the switching speed can be as fast as several picoseconds. Combining the topological surface states and the nearly compensated ferrimagnets provides a promising route for practical energy-efficient and high-speed spintronic devices.