Ballistic Graphene Cooper Pair Splitter.

We report an experimental study of a Cooper pair splitter based on ballistic graphene multiterminal junctions. In a two transverse junction geometry, namely the superconductor-graphene-superconductor and the normal metal-graphene-normal metal, we observe clear signatures of Cooper pair splitting in the local as well as nonlocal electronic transport measurements. Our experimental data can be very well described by our beam splitter model. These results open up possibilities to design new entangled state detection experiments using ballistic Cooper pair splitters.

Valley Subband Splitting in Bilayer Graphene Quantum Point Contacts.

We report a study of one-dimensional subband splitting in a bilayer graphene quantum point contact in which quantized conductance in steps of 4e^{2}/h is clearly defined down to the lowest subband. While our source-drain bias spectroscopy measurements reveal an unconventional confinement, we observe a full lifting of the valley degeneracy at high magnetic fields perpendicular to the bilayer graphene plane for the first two lowest subbands where confinement and Coulomb interactions are the strongest and a peculiar merging or mixing of K and K^{'} valleys from two nonadjacent subbands with indices (N,N+2), which are well described by our semiphenomenological model.

High-quality Si3N4 circuits as a platform for graphene-based nanophotonic devices.

Hybrid circuits combining traditional nanophotonic components with carbon-based materials are emerging as a promising platform for optoelectronic devices. We demonstrate such circuits by integrating single-layer graphene films with silicon nitride waveguides as a new architecture for broadband optical operation. Using high-quality microring resonators and Mach-Zehnder interferometers with extinction ratios beyond 40 dB we realize flexible circuits for phase-sensitive detection on chip. Hybrid graphene-photonic devices are fabricated via mechanical transfer and lithographic structuring, allowing for prolonged light-matter interactions. Our approach holds promise for studying optical processes in low-dimensional physical systems and for realizing electrically tunable photonic circuits.

Shot noise in ballistic graphene.

We have investigated shot noise in graphene field effect devices in the temperature range of 4.2-30 K at low frequency (f=600-850 MHz). We find that for our graphene samples with a large width over length ratio W/L, the Fano factor F reaches a maximum F ~ 1/3 at the Dirac point and that it decreases strongly with increasing charge density. For smaller W/L, the Fano factor at Dirac point is significantly lower. Our results are in good agreement with the theory describing that transport at the Dirac point in clean graphene arises from evanescent electronic states.

0.7 Structure and zero bias anomaly in ballistic hole quantum wires.

We study the anomalous conductance plateau around G=0.7(2e2/h) and the zero bias anomaly in ballistic hole quantum wires with respect to in-plane magnetic fields applied parallel B parallel and perpendicular B perpendicular to the quantum wire. As seen in electron quantum wires, the magnetic fields shift the 0.7 structure down to G=0.5(2e2/h) and simultaneously quench the zero bias anomaly. However, these effects are strongly dependent on the orientation of the magnetic field, owing to the highly anisotropic effective Landé g-factor g* in hole quantum wires. Our results highlight the fundamental role that spin plays in both the 0.7 structure and zero bias anomaly.

Zeeman splitting in ballistic hole quantum wires.

We have studied the Zeeman splitting in ballistic hole quantum wires formed in a (311)A quantum well by surface gate confinement. Transport measurements clearly show lifting of the spin degeneracy and crossings of the subbands when an in-plane magnetic field B is applied parallel to the wire. When B is oriented perpendicular to the wire, no spin splitting is discernible up to B = 8.8 T. The observed large Zeeman splitting anisotropy in our hole quantum wires demonstrates the importance of quantum confinement for spin splitting in nanostructures with strong spin-orbit coupling.

Sliding-induced decoupling and charge transfer between the coexisting Q1 and Q2 charge density waves in NbSe3.

Using high-resolution x-ray scattering in the presence of an applied current, we report evidence for a dynamical decoupling between the two NbSe3 charge-density waves (CDWs), Q1 (T(C1)=145 K) and Q2 (T(C2)=59 K), coexisting below T(C2). Simultaneous and oppositely directed shifts of the relevant CDW superlattice spots develop above a threshold current which we identify as the depinning threshold I(C1) for the more strongly pinned upper CDW Q1 (I(C1) approximately 10I(C2)). In contrast with shifts induced by current conversion processes, the present effect is not current polarized and is not limited to the current-contact regions. We propose a model which explains this instability through a sliding-induced charge transfer between the two electronic reservoirs corresponding to the Q1 and Q2 CDWs.

Motional ordering of a charge-density wave in the sliding state.

We have used high-resolution x-ray scattering, in the presence of an applied direct current, for studying the correlation lengths in the sliding charge-density wave (CDW) state. Transport properties were simultaneously measured in situ during the experiment. We find that, while the transverse correlation is reduced when the CDW moves, the CDW becomes more ordered in the direction of motion. This is the first report of a motional ordering process in a periodic system other than a vortex lattice.

Individual domain wall resistance in submicron ferromagnetic structures.

The resistance generated by individual domain walls is measured in a FePd nanostructure. Combining transport and magnetic imaging measurements, the intrinsic domain wall resistance is quantified. It is found positive and of a magnitude consistent with that predicted by models based on spin scattering effects within the walls. This magnetoresistance at a nanometer scale allows a direct counting of the number of walls inside the nanostructure. The effect is then used to measure changes in the magnetic configuration of submicron stripes under application of a magnetic field.