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1.
Langmuir ; 31(36): 9790-8, 2015 Sep 15.
Artigo em Inglês | MEDLINE | ID: mdl-26295187

RESUMO

We investigate the shape and mechanical properties of liquid interfaces down to nanometer scale by atomic force microscopy (AFM) and scanning electron microscopy (SEM) combined with in situ micromanipulation techniques. In both cases, the interface is probed with a cylindrical nanofiber with radius R of the order of 25-100 nm. The effective spring constant of the nanomeniscus oscillated around its equilibrium position is determined by static and frequency-modulation (FM) AFM modes. In the case of an unbounded meniscus, we find that the effective spring constant k is proportional to the surface tension γ of the liquid through k = (0.51 ± 0.06)γ, regardless of the excitation frequency from quasi-static up to 450 kHz. A model based on the equilibrium shape of the meniscus reproduces well the experimental data. Electron microscopy allowed to visualize the meniscus profile around the fiber with a lateral resolution of the order of 10 nm and confirmed its catenary shape. The influence of a lateral confinement of the interface is also investigated. We showed that the lateral extension L of the meniscus influences the effective spring constant following a logarithmic evolution k ∼ 2πγ/ln(L/R) deduced from the model. This comprehensive study of liquid interface properties over more than 4 orders of magnitude in meniscus size shows that advanced FM-AFM and SEM techniques are promising tools for the investigation of mechanical properties of liquids down to nanometer scale.

2.
Phys Rev Lett ; 106(13): 136102, 2011 Apr 01.
Artigo em Inglês | MEDLINE | ID: mdl-21517400

RESUMO

Using atomic force microscopy with nonconventional carbon tips, the pinning of a liquid contact line on individual nanometric defects was studied. This mechanism is responsible for the occurrence of the contact angle hysteresis. The presence of weak defects which do not contribute to the hysteresis is evidenced for the first time. The dissipated energy associated with strong defects is also measured down to values in the range of kT, which correspond to defect sizes in the order of 1 nm.

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