Angle-Dependent Raman Spectra of Crystal Polymorphs of GaO: A Computational Study.

Two crystal polymorphs of GaO consisting of GaO-H and GaO-T monolayers are proposed in this study. Based on the density functional theory calculations, the phonon dispersion demonstrates that both GaO-H and GaO-T monolayers could be stable. The band gaps of GaO-H and GaO-T monolayers are 1.51 and 1.43 eV, respectively. When an external electric field is applied, the band gaps of GaO monolayers are reduced dramatically, down to 0.13 eV with the field of 0.7 V/Å. Because of the decreased symmetry of C3v under an external electric field, more peaks of Raman spectra can be obtained. The angle-dependent Raman spectra of A ' 1 1 ${{\rm{A}}{{^\prime}}_1^1 }$ and A ' 1 2 ${{\rm{A}}{{^\prime}}_1^2 }$ of GaO-H monolayer, and A 1 g 1 ${{\rm{A}}_{1{\rm{g}}}^1 }$ and A 1 g 2 ${{\rm{A}}_{1{\rm{g}}}^2 }$ of GaO-T monolayer are discussed seperately, with the incident lasers of 488 and 532 nm. Additionally, the Raman intensity distribution shows that the incident light should be parallel to the plane of the GaO monolayer to obtain more comparable Raman spectra. These investigations of the crystal polymorphs of GaO monolayers may guide the experimental investigations of GaO monolayers and potential optoelectronic applications.

Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications.

In this study, cost-efficient atmospheric pressure chemical vapor deposition has been successfully developed to produce well-aligned high-quality monocrystalline Bi2S3 nanowires. By virtue of surface strain-induced energy band reconstruction, the Bi2S3 photodetectors demonstrate a broadband photoresponse across 370.6 to 1310 nm. Upon a gate voltage of 30 V, the responsivity, external quantum efficiency, and detectivity reach 23 760 A W-1, 5.55 × 106%, and 3.68 × 1013 Jones, respectively. The outstanding photosensitivity is ascribed to the high-efficiency spacial separation of photocarriers, enabled by synergy of the axial built-in electric field and type-II band alignment, as well as the pronounced photogating effect. Moreover, a polarization-discriminating photoresponse has been unveiled. For the first time, the correlation between quantum confinement and dichroic ratio is systematically explored. The optoelectronic dichroism is established to be negatively correlated with the cross dimension (i.e., width and height) of the channel. Specifically, upon 405 nm illumination, the optimized dichroic ratio reaches 2.4, the highest value among the reported Bi2S3 photodetectors. In the end, proof-of-concept multiplexing optical communications and broadband lensless polarimetric imaging have been implemented by exploiting the Bi2S3 nanowire photodetectors as light-sensing functional units. This study develops a quantum tailoring strategy for tailoring the polarization properties of (quasi-)1D material photodetectors whilst depicting new horizons for the next-generation opto-electronics industry.

Anisotropic dependence of radiation from excitons in Ga2O3/MoS2 heterostructure.

The anisotropic dependence of radiation arising from exciton recombination in the Ga2O3/MoS2 heterostructure is investigated, using density functional theory and the Bethe-Salpeter equation. The wurtzite (WZ) and zinc blende (ZB) structures of the Ga2O3 monolayer with ferroelectric (FE) properties are assembled with a MoS2 monolayer. Projected band structure, charge transfer and life time of excitons are discussed, to analyze which transition may be important to the creation of excitons from the electron-hole pair. A general formula of the angle-dependent intensities of radiation is derived. The characteristics of angle-dependent intensities that are closely related to the dipole moment of excitons are discussed, from the viewpoint of in-plane and out-of-plane polarizations. These predictions on radiation of the Ga2O3/MoS2 heterostructure should guide exciton dynamics in low dimensional systems and rational design of optoelectronic devices.

Predicting the Raman spectra of ferroelectric phases in two-dimensional Ga2O3 monolayer.

We investigate the vibrational properties and Raman spectra of the two-dimensional Ga2O3 monolayer, using density functional theory. Two ferroelectric (FE) phases of the Ga2O3 monolayer with wurtzite (WZ) and zinc blende (ZB) structures (FE-WZ and FE-ZB, respectively) are considered. The Raman tensor and angle-dependent Raman intensities of two major Raman peaks (A11 and A21) in both FE-WZ (497, and 779 cm-1) and FE-ZB (481, and 772 cm-1) Ga2O3 monolayers, are calculated for the polarization of scattered light, parallel and perpendicular to that of the incident light. The characteristics of angle-dependent Raman intensities are analyzed. The average non-resonant Raman spectra of the minor peaks in FE-WZ (E1) and FE-BZ (E1 and E2) are compared with those of major peaks A11 and A21. These predictions of the Raman spectra of the Ga2O3 monolayer may guide the rational design of two-dimensional optical devices.

Ropivacaine represses the proliferation, invasion, and migration of glioblastoma via modulating the microRNA-21-5p/KAT8 regulatory NSL complex subunit 2 axis.

Ropivacaine (Rop) is available to suppress the growth of glioblastoma (GBM), while its mechanism has not been completely elaborated. In this study, we explore the latent mechanism of Rop repressing GBM's growth via mediating the microRNA (miR)-21-5p/KAT8 regulatory NSL complex subunit 2 (KANSL2) axis. MiR-21-5p was declined in GBM, while KANSL2 was elevated. Clinical association studies manifested miR-21-5p was distinctly linked to the tumor size and grade of GBM. Rop constrained GBM cell proliferation, invasion, and migration but boosted apoptosis. Elevated miR-21-5p strengthened Rop's action, while augmented KANSL2 weakened Rop's role. Furthermore, the impact of silencing miR-21-5p on GBM was turned around via declining KANSL2 in Rop-treated GBM cells. KANSL2 was the target gene of miR-21-5p. In short, Rop exerted an anti-tumor impact on GBM via mediating the miR-21-5p/KANSL2 axis, which offered novel viewpoints for the later adoption of Rop as GBM drugs.

Promoting the Performance of 2D Material Photodetectors by Dielectric Engineering.

Low light absorption and limited carrier lifetime are two limiting factors hampering the further breakthrough of the performance of 2D materials (2DMs)-based photodetectors. This study proposes an ingenious dielectric engineering strategy toward boosting the photosensitivity. Periodic dielectric structures (PDSs), including SiO2 /h-BN, SiO2 /Al2 O3 , and SiO2 /SrTiO3 (STO), are exploited to couple with 2D photosensitive channels (denoted as PDS-2DMs). The responsivity, external quantum efficiency, and detectivity of an optimized SiO2 /STO(300 nm) -WSe2 photodetector reach 89081 A W-1 , 2.7 × 107 %, and 1.8 × 1013 Jones, respectively. These performance metrics are orders of magnitude higher than a pristine WSe2 photodetector, enabling reliable sub-1 pW weak light detection. Based on systematic characterizations and first-principle calculations, such dramatic performance improvement is associated with the promoted direct bandgap transition, reduced exciton binding energy, and PDS-induced periodic intramolecular built-in electric field across the atomically thin channels, which efficiently separates the photoexcited electron-hole pairs. More inspiringly, this strategy is also successfully exploited to 2D WS2 photodetectors, demonstrating broad applicability. As a whole, this work promises an exceptional avenue to ameliorate 2DM photodetectors and opens up a new horizon "dielectric optoelectronics," simultaneously highlighting the role of dielectric environment during analyzing the fundamentals of 2DM devices.

Towards multistate multimode landscapes in singlet fission of pentacene: the dual role of charge-transfer states.

Singlet fission duplicates triplet excitons for improving light harvesting efficiency. The presence of the interaction between electronic and nuclear degrees of freedom complicates the interpretation of correlated triplet pairs. We report a quantum chemistry study on the significance and subtleties of multistate and multimode pathways in forming triplet pair states of the pentacene dimer through a six-state vibronic-coupling Hamiltonian derived from many-electron adiabatic wavefunctions of an ab initio density matrix renormalization group. The resulting spin values of the singlet manifolds on each pentacene center are computed, and the varying spin nature can be distinguished clearly with respect to dimer stacking and vibronic progression. Our monomer spin assignments reveal the coexistence of both lower-lying weak and higher-lying strong charge transfer states which interact vibronically with the triplet pair state, providing important implications for its generation and separation occurring in vibronic regions. This work conveys the importance of the many-electron process requiring close low-lying singlet manifolds to determine the subtle fission details, and represents an important step for understanding vibronically resolved spin states and conversions underlying efficient singlet fission.

LncRNA SNHG14 promotes OGD/R-induced neuron injury by inducing excessive mitophagy via miR-182-5p/BINP3 axis in HT22 mouse hippocampal neuronal cells.

BACKGROUND: Long non-coding RNA (lncRNA) small nucleolar RNA host gene 14 (SNHG14) is associated with cerebral ischemia-reperfusion (CI/R) injury. This work aims to explore the role of SNHG14 in CI/R injury. METHODS: HT22 (mouse hippocampal neuronal cells) cell model was established by oxygen-glucose deprivation/reoxygenation (OGD/R) treatment. The interaction among SNHG14, miR-182-5p and BNIP3 was verified by luciferase reporter assay. Flow cytometry, western blot and quantitative real-time PCR were performed to examine apoptosis, the expression of genes and proteins. RESULTS: SNHG14 and BNIP3 were highly expressed, and miR-182-5p was down-regulated in the OGD/R-induced HT22 cells. OGD/R-induced HT22 cells exhibited an increase in apoptosis. SNHG14 overexpression promoted apoptosis and the expression of cleaved-caspase-3 and cleaved-caspase-9 in the OGD/R-induced HT22 cells. Moreover, SNHG14 up-regulation enhanced the expression of BNIP3, Beclin-1, and LC3II/LC3I in the OGD/R-induced HT22 cells. Furthermore, SNHG14 regulated BNIP3 expression by sponging miR-182-5p. MiR-182-5p overexpression or BNIP3 knockdown repressed apoptosis in OGD/R-induced HT22 cells, which was abolished by SNHG14 up-regulation. CONCLUSION: Our study demonstrates that lncRNA SNHG14 promotes OGD/R-induced neuron injury by inducing excessive mitophagy via miR-182-5p/BINP3 axis in HT22 mouse hippocampal neuronal cells. Thus, SNHG14/miR-182-5p/BINP3 axis may be a valuable target for CI/R injury therapies.

ß-As Monolayer: Vibrational Properties and Raman Spectra.

Recently, semiconducting and other extraordinary properties of the monolayer of the V-group element have attracted a broad interest and attention. The success of experimentally growing antimonene and black phosphorus makes the arsenic monolayer a reasonable candidate for two-dimensional semiconductors. By using DFT calculation, we investigate the vibrational properties and Raman spectra of the buckled honeycomb monolayer of arsenic (ß-As) for four commonly used laser lines. By calculating Raman tensor of each active modes of the ß-As monolayer, we obtained polarization angle-dependent Raman intensities when the wave vector of incident light is parallel and perpendicular with the plane of the ß-As monolayer. We found that the nonresonant Raman spectra have two peaks at 235 and 305 cm-1 that correspond to the in-plane vibrating mode Eg and out-of-plane vibrating mode A1g, which is similar to germanene, blue phosphorene, and ß-Sb monolayer Raman spectra. There are two (four) minima and two (four) maxima when the polarization direction of scattered light is parallel (perpendicular) to that of the incident light and the wave vector of the incident light is parallel to the ß-As monolayer. The Raman intensities of neither parallel polarization configuration nor perpendicular polarization configuration depend on the polarization direction when the wave vector of incident light is perpendicular to the ß-As monolayer. The relation between shapes of the polar plots and relative values of Raman tensor elements is found. The Raman intensities decrease with increasing wavelength of incident laser lines in most cases. Our results will help experimentalists to identify the existence and the orientation of the ß-As monolayer while they are growing the ß-As monolayer.

Vibrational properties and Raman spectra of pristine and fluorinated blue phosphorene.

Using density functional theory, we investigated the vibrational properties and Raman spectra of pristine blue phosphorene and fluorinated blue phosphorene. The fluorinated blue phosphorene possesses a Dirac cone at the K point (about 310 cm-1). The shape of the Dirac cone remains unchanged under different tensile strains. The Raman tensor and thus angle-dependent Raman intensities of all Raman active modes are calculated for the polarizations of scattered light parallel and perpendicular to that of the incident light. The characteristics of angle-dependent Raman intensities are discussed. Moreover, the polarization direction averaged non-resonant Raman spectra of pristine blue phosphorene and fluorinated blue phosphorene are compared with that of germanene and black phosphorene.

Room-Temperature Strong Light-Matter Interaction with Active Control in Single Plasmonic Nanorod Coupled with Two-Dimensional Atomic Crystals.

Strong light-matter coupling manifested by Rabi splitting has attracted tremendous attention due to its fundamental importance in cavity quantum-electrodynamics research and great potentials in quantum information applications. A prerequisite for practical applications of the strong coupling in future optoelectronic devices is an all-solid-state system exhibiting room-temperature Rabi splitting with active control. Here we realized such a system in heterostructure consisted of monolayer WS2 and an individual plasmonic gold nanorod. By taking advantages of the small mode volume of the nanorod and large transition dipole moment of the WS2 exciton, giant Rabi splitting energies of 91-133 meV can be achieved at ambient conditions, which only involve a small number of excitons. The strong light-matter coupling can be dynamically tuned either by electrostatic gating or temperature scanning. These findings can pave the way toward active nanophotonic devices operating at room temperature.

Corrosion-Assisted Self-Growth of Au-Decorated ZnO Corn Silks and Their Photoelectrochemical Enhancement.

Modern nanotechnology generates more stringent requirements for the design and synthetic strategy of nanostructural materials. In this work, we demonstrate a novel strategy for the synthesis of "corn silk"-like ZnO hierarchical nanostructures, simplified as ZnO corn silk: silk-like ZnO nanotubes (NTs) with a large length-to-diameter ratio are grown on the top tip of corn-shaped ZnO nanorods (NRs). The synthetic method is unique in that when the ZnO NRs are dipped into the aqueous solution of NaBH4, the release of Zn2+ and OH- caused by the corrosion of ZnO NRs, as well as the subsequent growth of ZnO NTs, could allow the process to run step-by-step in self-assembly mode. This process is directed and driven by the change in concentrations of hydrogen anion H(s)- induced by NaBH4, as well as hydroxyl ions (OH-) induced by the H- formation and hydrolysis of dissociative Zn atoms. The prepared ZnO corn silks exhibit highly enhanced photoelectrochemical (PEC) efficiency after decoration with Au nanoparticles (NPs). ZnO silks act as pathways to facilitate efficient charge transfer, and the Au NP decoration induces the plasmonic effect, causing the hot electrons to inject into ZnO under visible illumination. At the same time, the formation of a Schottky barrier at the Au/ZnO interface can retard the electron-hole recombination. Overall, Au-decorated ZnO corn silk with an increased PEC efficiency represents a promising photoanode material, and the synthesis route developed in the current study is applicable to building hierarchical nanostructures of other materials.

Chemically-doped graphene with improved surface plasmon characteristics: an optical near-field study.

One of the most fascinating and important merits of graphene plasmonics is their tunability over a wide range. While chemical doping has proven to be a facile and effective way to create graphene plasmons, most of the previous studies focused on the macroscopic behaviors of the plasmons in chemically-doped graphene and little was known about their nanoscale responses and related mechanisms. Here, to the best of our knowledge, we present the first experimental near-field optical study on chemically-doped graphene with improved surface plasmon characteristics. By using a scattering-type scanning near-field optical microscope (s-SNOM), we managed to show that the graphene plasmons can be tuned and improved using a facile chemical doping method. Specifically, the plasmon interference patterns near the edge of the monolayer graphene were substantially enhanced via nitric acid (HNO3) exposure. The plasmon-related characteristics can be deduced by analyzing such plasmonic fringes, which exhibited a longer plasmon wavelength and reduced plasmon damping rate. In addition, the local carrier density and therefore the Fermi energy level (EF) of graphene can be obtained from the plasmonic nano-imaging, which indicated that the enhanced plasmon oscillation originated from the injection of free holes into graphene by HNO3. These findings were further corroborated by theoretical calculations using density functional theory (DFT). We believe that our findings provide a clear nanoscale picture on improving graphene plasmonics by chemical doping, which will be helpful for optimizing graphene plasmonics and for elucidating the mechanisms of two-dimensional light confinement by atomically thick materials.

Stable, Fast UV-Vis-NIR Photodetector with Excellent Responsivity, Detectivity, and Sensitivity Based on α-In2Te3 Films with a Direct Bandgap.

Photoelectric conversion is of great importance to extensive applications. However, thus far, photodetectors integrated with high responsivity, excellent detectivity, large phototo-dark current ratio, fast response speed, broad spectral range, and good stability are rarely achieved. Herein, we deposited large-scale and high-quality polycrystalline indium sesquitelluride (α-In2Te3) films via pulsed-laser deposition. Then, we demonstrated that the photodetectors made of the prepared α-In2Te3 films possess stable photoswitching behavior from 370 to 1064 nm and short response time better than ca. 15 ms. At a source-drain voltage of 5 V, the device achieves a high responsivity of 44 A/W, along with an outstanding detectivity of 6 × 10(12) cm H(1/2) W(-1) and an excellent sensitivity of 2.5 × 10(5) cm(2)/W. All of these figures-of-merit are the best among those of the reported α-In2Te3 photodetectors. In fact, they are comparable to the state-of-the-art commercial Si and Ge photodetectors. For the first time, we established the theoretical evidence that α-In2Te3 possesses a direct bandgap structure, which reasonably accounts for the superior photodetection performances above. Importantly, the device exhibits a good stability against the multiple photoswitching operation and ambient environment, along with no obvious voltage-scan hysteresis. These excellent figures-of-merit, together with the broad spectral range and good stability, underscore α-In2Te3 as a promising candidate material for next-generation photodetection.

Field-Induced Crystalline-to-Amorphous Phase Transformation on the Si Nano-Apex and the Achieving of Highly Reliable Si Nano-Cathodes.

Nano-scale vacuum channel transistors possess merits of higher cutoff frequency and greater gain power as compared with the conventional solid-state transistors. The improvement in cathode reliability is one of the major challenges to obtain high performance vacuum channel transistors. We report the experimental findings and the physical insight into the field induced crystalline-to-amorphous phase transformation on the surface of the Si nano-cathode. The crystalline Si tip apex deformed to amorphous structure at a low macroscopic field (0.6~1.65 V/nm) with an ultra-low emission current (1~10 pA). First-principle calculation suggests that the strong electrostatic force exerting on the electrons in the surface lattices would take the account for the field-induced atomic migration that result in an amorphization. The arsenic-dopant in the Si surface lattice would increase the inner stress as well as the electron density, leading to a lower amorphization field. Highly reliable Si nano-cathodes were obtained by employing diamond like carbon coating to enhance the electron emission and thus decrease the surface charge accumulation. The findings are crucial for developing highly reliable Si-based nano-scale vacuum channel transistors and have the significance for future Si nano-electronic devices with narrow separation.