Rear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem cells.

Silicon solar cells based on high temperature passivating contacts are becoming mainstream in the photovoltaic industry. Here, we developed a high-quality boron-doped poly-silicon hole contact. When combined with a co-processed phosphorus-doped poly-silicon electron contact, high-voltage silicon bottom cells could be demonstrated and included in 28.25%-efficient perovskite/Si tandems. The active area was 4 cm2 active area and the front electrode was screen-printed.

Thermal Analysis of Parylene Thin Films for Barrier Layer Applications.

Biocompatible polymer films demonstrating excellent thermal stability are highly desirable for high-temperature (>250 °C) applications, especially in the bioelectronic encapsulation domain. Parylene, as an organic thin film, is a well-established polymer material exhibiting excellent barrier properties and is often the material of choice for biomedical applications. This work investigated the thermal impact on the bulk properties of four types of parylene films: parylene N, C, VT4, and AF4. The films, deposited using the standard Gorham process, were analyzed at varying annealing temperatures from room temperature up to 450 °C. Thermal properties were identified by differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA) methods, while X-ray diffraction (XRD) analysis showed the effect of high-temperature exposure on the structural properties. In addition to thermal and structural analysis, the barrier properties were measured through the helium transmission rate (HTR) and the water vapor transmission rate (WVTR). Fluorinated parylene films were confirmed to be exceptional materials for high-temperature applications. Parylene AF4 film, 25um thick, demonstrated excellent barrier performance after 300 °C exposure, with an HTR and a WVTR of 12.18 × 103 cm3 (STP) m−2 day−1 atm−1 and 6.6 g m−2 day−1, respectively.

Fully textured monolithic perovskite/silicon tandem solar cells with 25.2% power conversion efficiency.

Tandem devices combining perovskite and silicon solar cells are promising candidates to achieve power conversion efficiencies above 30% at reasonable costs. State-of-the-art monolithic two-terminal perovskite/silicon tandem devices have so far featured silicon bottom cells that are polished on their front side to be compatible with the perovskite fabrication process. This concession leads to higher potential production costs, higher reflection losses and non-ideal light trapping. To tackle this issue, we developed a top cell deposition process that achieves the conformal growth of multiple compounds with controlled optoelectronic properties directly on the micrometre-sized pyramids of textured monocrystalline silicon. Tandem devices featuring a silicon heterojunction cell and a nanocrystalline silicon recombination junction demonstrate a certified steady-state efficiency of 25.2%. Our optical design yields a current density of 19.5 mA cm-2 thanks to the silicon pyramidal texture and suggests a path for the realization of 30% monolithic perovskite/silicon tandem devices.

Design Parameters for Subwavelength Transparent Conductive Nanolattices.

Recent advancements with the directed assembly of block copolymers have enabled the fabrication over cm2 areas of highly ordered metal nanowire meshes, or nanolattices, which are of significant interest as transparent electrodes. Compared to randomly dispersed metal nanowire networks that have long been considered the most promising next-generation transparent electrode material, such ordered nanolattices represent a new design paradigm that is yet to be optimized. Here, through optical and electrical simulations, we explore the potential design parameters for such nanolattices as transparent conductive electrodes, elucidating relationships between the nanowire dimensions, defects, and the nanolattices' conductivity and transmissivity. We find that having an ordered nanowire network significantly decreases the length of nanowires required to attain both high transmissivity and high conductivity, and we quantify the network's tolerance to defects in relation to other design constraints. Furthermore, we explore how both optical and electrical anisotropy can be introduced to such nanolattices, opening an even broader materials design space and possible set of applications.

Silver Film Surface Modification by Ion Bombardment Decreases Surface Plasmon Resonance Absorption.

Silver thin films covered with dielectric films serving as protective coatings are desired for telescope mirrors, but durable coatings have proved elusive. As part of an effort to develop long-lived protected-silver mirrors, silver thin films were deposited by electron beam evaporation using a physical vapor deposition system at the University of California Observatories Astronomical Coatings Lab. The silver films were later covered with a stack of dielectric films utilizing silicon nitride and titanium dioxide deposited by ion-assisted electron beam evaporation to fabricate protected mirrors. In-situ argon ion bombardment was introduced after silver deposition and prior to the deposition of dielectric films to assess its effects on the performance of the mirrors. We found that ion bombardment of the silver influenced surface morphology and reflectivity, and these effects correlated with time between silver deposition and ion bombardment. The overall reflectivity at wavelengths in the range of 350-800 nm was found to improve due to ion bombardment, which was qualitatively interpreted as a result of decreased surface plasmon resonance coupling. We suggest that the observed decrease in coupling is caused by silver grain boundary pinning due to ion bombardment suppressing silver surface diffusion, forming smoother silver-dielectric interfaces.

Reflectometry-Ellipsometry Reveals Thickness, Growth Rate, and Phase Composition in Oxidation of Copper.

The oxidation of copper is a complicated process. Copper oxide develops two stable phases at room temperature and standard pressure (RTSP): cuprous oxide (Cu2O) and cupric oxide (CuO). Both phases have different optical and electrical characteristics that make them interesting for applications such as solar cells or resistive switching devices. For a given application, it is necessary to selectively control oxide thickness and cupric/cuprous oxide phase volume fraction. The thickness and composition of a copper oxide film growing on the surface of copper widely depend on the characteristics of as-deposited copper. In this Research Article, two samples, copper films prepared by two different deposition techniques, electron-beam evaporation and sputtering, were studied. As the core part of the study, the formation of the oxidized copper was analyzed routinely over a period of 253 days using spectroscopic polarized reflectometry-spectroscopic ellipsometry (RE). An effective medium approximation (EMA) model was used to fit the RE data. The RE measurements were complemented and validated by using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and X-ray diffraction (XRD). Our results show that the two samples oxidized under identical laboratory ambient conditions (RTSP, 87% average relative humidity) developed unique oxide films following an inverse-logarithmic growth rate with thickness and composition different from each other over time. Discussion is focused on the ability of RE to simultaneously extract thickness (i.e., growth rate) and composition of copper oxide films and on plausible physical mechanisms responsible for unique oxidation habits observed in the two copper samples. It appears that extended surface characteristics (i.e., surface roughness and grain boundaries) and preferential crystalline orientation of as-deposited polycrystalline copper films control the growth kinetics of the copper oxide film. Analysis based on a noncontact and nondestructive measurement, such as RE, to extract key material parameters is beneficial for conveniently understanding the oxidation process that would ultimately enable copper oxide-based devices at manufacturing scales.