Rapid and Sensitive Detection of Verticillium dahliae from Soil Using LAMP-CRISPR/Cas12a Technology.

Cotton Verticillium wilt is mainly caused by the fungus Verticillium dahliae, which threatens the production of cotton. Its pathogen can survive in the soil for several years in the form of microsclerotia, making it a destructive soil-borne disease. The accurate, sensitive, and rapid detection of V. dahliae from complex soil samples is of great significance for the early warning and management of cotton Verticillium wilt. In this study, we combined the loop-mediated isothermal amplification (LAMP) with CRISPR/Cas12a technology to develop an accurate, sensitive, and rapid detection method for V. dahliae. Initially, LAMP primers and CRISPR RNA (crRNA) were designed based on a specific DNA sequence of V. dahliae, which was validated using several closely related Verticillium spp. The lower detection limit of the LAMP-CRISPR/Cas12a combined with the fluorescent visualization detection system is approximately ~10 fg/µL genomic DNA per reaction. When combined with crude DNA-extraction methods, it is possible to detect as few as two microsclerotia per gram of soil, with the total detection process taking less than 90 min. Furthermore, to improve the method's user and field friendliness, the field detection results were visualized using lateral flow strips (LFS). The LAMP-CRISPR/Cas12a-LFS system has a lower detection limit of ~1 fg/µL genomic DNA of the V. dahliae, and when combined with the field crude DNA-extraction method, it can detect as few as six microsclerotia per gram of soil, with the total detection process taking less than 2 h. In summary, this study expands the application of LAMP-CRISPR/Cas12a nucleic acid detection in V. dahliae and will contribute to the development of field-deployable diagnostic productions.

A Ternary Inverter Based on Hybrid Conduction Mechanism of Band-to-Band Tunneling and Drift-Diffusion Process.

In this paper, a novel transistor based on a hybrid conduction mechanism of band-to-band tunneling and drift-diffusion is proposed and investigated with the aid of TCAD tools. Besides the on and off states, the proposed device presents an additional intermediate state between the on and off states. Based on the tri-state behavior of the proposed TDFET (tunneling and drift-diffusion field-effect transistor), a ternary inverter is designed and its operation principle is studied in detail. It was found that this device achieves ternary logic with only two components, and its structure is simple. In addition, the influence of the supply voltage and the key device parameters are also investigated.

Machine Learning to Promote Efficient Screening of Low-Contact Electrode for 2D Semiconductor Transistor Under Limited Data.

Low-barrier and high-injection electrodes are crucial for high-performance (HP) 2D semiconductor devices. Conventional trial-and-error methodologies for electrode material screening are impractical because of their low efficiency and arbitrary specificity. Although machine learning has emerged as a promising alternative to tackle this problem, its practical application in semiconductor devices is hindered by its substantial data requirements. In this paper, a comprehensive scheme combining an autoencoding regularized adversarial neural network and a feature-adaptive variational active learning algorithm for screening low-contact electrode materials for 2D semiconductor transistors with limited data is proposed. The proposed scheme exhibits exceptional performance by training with only 15% of the total data points, where the mean square errors are 0.17 and 0.27 eV for the vertical and lateral Schottky barrier, respectively, and 2.88% for tunneling probability. Further, it exhibits an optimal predictive performance for 100 randomly sampled training datasets, reveals the underlying physical insight based on the identified features, and realizes continual improvement by employing detailed density-of-states descriptors. Finally, the empirical evaluations of the transport characteristics are conducted and verified by constructing MOSFET devices. These findings demonstrate the considerable potential of machine-learning techniques for screening high-efficiency electrode materials and constructing HP 2D semiconductor devices.

Quantum transport simulations of sub-5 nm bilayer Ga2O3transistor for high-performance applications.

Two-dimensional (2D) semiconductors with bizarre properties show great application potential for nanoscale devices, which is regarded as the Si alternation to extend the Moore's Law in sub-5 nm era. In this study, we investigate the electronic structure and ballistic transport characteristics of sub-5 nm bilayer (BL) Ga2O3metal-oxide-semiconductor field-effect transistor (MOSFET) using the first-principles calculations and the nonequilibrium Green's function method. Quasi-direct band structure with bandgap of 4.77 eV is observed in BL Ga2O3, and high electron mobility of 910 cm2V-1s-1at 300 K is observed under the full-phonon scattered processes. Due to the enlarged natural length, the gate-controllable ability of 2D Ga2O3n-MOSFET is suppressed with the increased layer. The transport characteristic investigation indicates that BL Ga2O3n-MOSFETs can meet the latest International Technology Roadmap for Semiconductors requirement for high-performance application untilLg= 4 nm. The figures of merits including on-current, intrinsic delay time, and power delay product are showing competitive potential with the reported 2D materials. With the help of underlap structure, the device performance can be further improved in the sub-3 nm region. Our results indicate that BL Ga2O3is a promising candidate for sub-5 nm MOSFET applications.

Indium doping-assisted monolayer Ga2O3 exfoliation for performance-enhanced MOSFETs.

Monolayer (ML) Ga2O3 with outstanding properties is promising for advanced nanodevice applications; however, its high exfoliation energy makes obtaining it challenging. In this study, we propose a more efficient solution to obtain ML Ga2O3 by exfoliation from indium-doped bulk ß-Ga2O3. The exfoliation efficiency with the assistance of In-doping and the doping influence on the stability and structural and electronic properties of ML Ga2O3 are systematically studied using first-principles calculations. The exfoliation energy of ML Ga2O3 is found to be reduced by 28% and is of the same order of magnitude as that of typical van der Waals (vdWs) 2D materials. Besides, excellent stability is preserved for ML Ga2O3 at extremely high In doping concentration by phonon spectrum and ab initio molecular dynamics inspections. The bandgap of ML Ga2O3 decreases from 4.88 to 4.25 eV with increased In concentration, and the modification of the VBM converts ML Ga2O3 to a direct bandgap semiconductor. With the suppression of ZA mode phonon scattering, the pristine and In-doped ML Ga2O3 exhibit high electron mobility, whereas the strong electron-phonon coupling (EPC) effect significantly decreases the hole mobility. Finally, the transfer characteristics of 5 nm MOSFETs based on the pristine and In-doped ML Ga2O3 with varied In concentrations are simulated based on the non-equilibrium Green's function (NEGF) formalism. The Ion for HP has a maximum of 3060 µA µm-1 at In doping concentration of 5% and is triple that of the pristine ML Ga2O3 for LP at In doping concentration of 20%. The FOMs of n-type MOSFETs based on the In-doped ML Ga2O3 and typical 2D materials are compared and shows huge potential for sub-5 nm applications. Our study applies a new strategy for obtaining ML Ga2O3 and can also improve the device performance at the same time.

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region.

Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.

The Rubber Tree (Heveae brasiliensis) MLO Protein HbMLO12 Promotes Plant Susceptibility to Sustain Infection by a Powdery Mildew Fungus.

Powdery mildew severely affects several important crops and cash plants. Disruption of mildew resistance locus O (MLO) genes elevates resistance against powdery mildew in several plants. However, whether rubber tree (Heveae brasiliensis) MLO proteins are linked to susceptibility remains unknown, owing to technical limitations in the genetic manipulation of this woody plant. A previous study showed that the H. brasiliensis MLO-like protein HbMLO12 demonstrates high amino acid sequence similarity with the known Arabidopsis MLO protein AtMLO12. In this study, we investigated whether HbMLO12 regulates susceptibility to powdery mildew. H. brasiliensis leaves take up exogenously synthesized double-stranded RNAs (dsRNAs), and foliar application of dsRNA homologous to HbMLO12 gene specifically induces HbMLO12 silencing in H. brasiliensis leaf tissues. Notably, HbMLO12 silencing inhibited fungal infection and elevated the immune response during interaction with the rubber tree powdery mildew fungus. Furthermore, the heterologous expression of HbMLO12 suppressed bacterial flg22- and fungal chitin-induced immune responses and enhanced bacterial infection in Arabidopsis. Our study provides evidence that HbMLO12 contributes to susceptibility to powdery mildew. [Formula: see text] Copyright © 2023 The Author(s). This is an open access article distributed under the CC BY-NC-ND 4.0 International license.

First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga2O3.

The electronic properties of monolayer (ML) Ga2O3 and transport properties of ML Ga2O3-based n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated by first-principles calculations under the framework of density functional theory (DFT) coupled with the nonequilibrium Green's function (NEGF) formalism. The results show that ML Ga2O3 has a quasi-direct band gap of 4.92 eV, and the x- and y-directed electron mobilities are 1210 and 816 cm2 V-1 s-1 at 300 K, respectively, under the full consideration of phonon scattering. The electron-phonon scattering mechanism shows a temperature-dependent behavior, with the acoustic modes dominating below 300 K and optical modes dominating above 300 K. At a gate length of Lg = 5 nm, the on-current of ML Ga2O3 n-MOSFET for high-performance (HP) application is 2890 µA/µm, which is more than those of the most reported two-dimensional (2D) materials. The delay time as well as the power delay product of ML Ga2O3 MOSFETs can meet the demands of the latest International Technology Roadmap for Semiconductors (ITRS) for HP and low-power (LP) applications until Lg is less than 4 and 5 nm, respectively. Through underlap structure and doping optimization strategies, ML Ga2O3 n-MOSFET can further fulfill the ITRS requirements for 1 nm. At last, we compare the performance of the 32-bit arithmetic logic unit (ALU) built on ML Ga2O3 MOSFETs with the recently reported beyond-CMOS devices. Our results indicate that ML Ga2O3 can serve as a promising channel material in the post-silicon era.

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications.

GeSn alloys have already attracted extensive attention due to their excellent properties and wide-ranging electronic and optoelectronic applications. Both theoretical and experimental results have shown that direct bandgap GeSn alloys are preferable for Si-based, high-efficiency light source applications. For the abovementioned purposes, molecular beam epitaxy (MBE), physical vapour deposition (PVD), and chemical vapor deposition (CVD) technologies have been extensively explored to grow high-quality GeSn alloys. However, CVD is the dominant growth method in the industry, and it is therefore more easily transferred. This review is focused on the recent progress in GeSn CVD growth (including ion implantation, in situ doping technology, and ohmic contacts), GeSn detectors, GeSn lasers, and GeSn transistors. These review results will provide huge advancements for the research and development of high-performance electronic and optoelectronic devices.

Tunable Optical Properties of Amorphous-Like Ga2O3 Thin Films Deposited by Electron-Beam Evaporation with Varying Oxygen Partial Pressures.

Ga2O3 thin films were fabricated by the electron-beam evaporation technique at a varying oxygen partial pressure from 0 to 2.0 × 10-2 Pa. The effect of oxygen partial pressure on the crystalline structure and optical properties of the Ga2O3 films was analyzed using sophisticated techniques including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, spectroscopic ellipsometry, ultraviolet-visible spectroscopy and a laser-induced damage test system. The correlation between the oxygen partial pressure and the film's properties in optics and materials were investigated. XRD and Raman revealed that all films were amorphous in spite of applying a varying oxygen partial pressure. With the change of oxygen partial pressure, XPS data indicated that the content of oxygen in the Ga2O3 films could be broadly modulable. As a result, a changeable refractive index of the Ga2O3 film is realizable and a variable blue-shift of absorption edges in transmittance spectra of the films is achievable. Moreover, the damage threshold value varied from 0.41 to 7.51 J/cm2 according to the rise of oxygen partial pressure. These results demonstrated that the optical properties of Ga2O3 film can be broadly tunable by controlling the oxygen content in the film.

A broadband and low-power light-control-light effect in a fiber-optic nano-optomechanical system.

The coupling of the optical and mechanical degrees of freedom using optical force in nano-devices offers a novel mechanism to implement all-optical signal processing. However, the ultra-weak optical force requires a high pump optical power to realize all-optical processing. For such devices, it is still challenging to lower the pump power and simultaneously broaden the bandwidth of the signal light under processing. In this work, a simple and cost-effective optomechanical scheme was demonstrated that was capable of achieving a broadband (208 nm) and micro-Watt (∼624.13 µW) light-control-light effect driven by a relatively weak optical force (∼3 pN). In the scheme, a tapered nanofiber (TNF) was evanescently coupled with a substrate, allowing the pump light guided in the TNF to generate a strong transverse optical force for the light-control-light effect. Additionally, thanks to the low stiffness (5.44 fN nm-1) of the TNF, the light-control-light scheme also provided a simple method to measure the static weak optical force with a minimum detectable optical force down to 380.8 fN. The results establish TNF as a cost-effective scheme to break the limitation of the modulation wavelength bandwidth (MWB) at a low pump power and show that the TNF-optic optomechanical system can be well described as a harmonic oscillator.

Quartz-enhanced photoacoustic spectroscopy employing pilot line manufactured custom tuning forks.

Pilot line manufactured custom quartz tuning forks (QTFs) with a resonance frequency of 28 kHz and a Q value of >30, 000 in a vacuum and ∼ 7500 in the air, were designed and produced for trace gas sensing based on quartz enhanced photoacoustic spectroscopy (QEPAS). The pilot line was able to produce hundreds of low-frequency custom QTFs with small frequency shift < 10 ppm, benefiting the detecting of molecules with slow vibrational-translational (V-T) relaxation rates. An Au film with a thickness of 600 nm were deposited on both sides of QTF to enhance the piezoelectric charge collection efficiency and reduce the environmental electromagnetic noise. The laser focus position and modulation depth were optimized. With an integration time of 84 s, a normalized noise equivalent absorption (NNEA) coefficient of 1.7 × 10-8 cm-1∙W∙Hz-1/2 was achieved which is ∼10 times higher than a commercially available QTF with a resonance frequency of 32 kHz.

Application of Micro Quartz Tuning Fork in Trace Gas Sensing by Use of Quartz-Enhanced Photoacoustic Spectroscopy.

A novel quartz-enhanced photoacoustic spectroscopy (QEPAS) sensor based on a micro quartz tuning fork (QTF) is reported. As a photoacoustic transducer, a novel micro QTF was 3.7 times smaller than the usually used standard QTF, resulting in a gas sampling volume of ~0.1 mm3. As a proof of concept, water vapor in the air was detected by using 1.39 µm distributed feedback (DFB) laser. A detailed analysis of the performance of a QEPAS sensor based on the micro QTF was performed by detecting atmosphere H2O. The laser focus position and the laser modulation depth were optimized to improve the QEPAS excitation efficiency. A pair of acoustic micro resonators (AmRs) was assembled with the micro QTF in an on-beam configuration to enhance the photoacoustic signal. The AmRs geometry was optimized to amplify the acoustic resonance. With a 1 s integration time, a normalized noise equivalent absorption coefficient (NNEA) of 1.97 × 10-8 W·cm-1·Hz-1/2 was achieved when detecting H2O at less than 1 atm.

Influence of Tuning Fork Resonance Properties on Quartz-Enhanced Photoacoustic Spectroscopy Performance.

A detailed investigation of the influence of quartz tuning forks (QTFs) resonance properties on the performance of quartz-enhanced photoacoustic spectroscopy (QEPAS) exploiting QTFs as acousto-electric transducers is reported. The performance of two commercial QTFs with the same resonance frequency (32.7 KHz) but different geometries and two custom QTFs with lower resonance frequencies (2.9 KHz and 7.2 KHz) were compared and discussed. The results demonstrated that the fundamental resonance frequency as well as the quality factor and the electrical resistance were strongly inter-dependent on the QTF prongs geometry. Even if the resonance frequency was reduced, the quality factor must be kept as high as possible and the electrical resistance as low as possible in order to guarantee high QEPAS performance.

High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-temperature Magnetron Sputtering for Optoelectronic Application.

In this paper, a high-quality sputtered-GeSn layer on Ge (100) with a Sn composition up to 7% was demonstrated. The crystallinity of the GeSn layer was investigated via high-resolution X-ray diffraction (HR-XRD) and the strain relaxation degree of the GeSn layer was evaluated to be approximately 50%. A novel method was also proposed to evaluate the averaged threading dislocation densities (TDDs) in the GeSn layer, which was obtained from the rocking curve of GeSn layer along the (004) plane. The photoluminescence (PL) measurement result shows the significant optical emission (1870 nm) from the deposited high-quality GeSn layer. To verify whether our deposited GeSn can be used for optoelectronic devices, we fabricated the simple vertical p-i-n diode, and the room temperature current-voltage (I-V) characteristic was obtained. Our work paves the way for future sputtered-GeSn optimization, which is critical for optoelectronic applications.

Effects of oxygen vacancies on the structural and optical properties of ß-Ga2O3.

The structural, electronic, and optical properties of ß-Ga2O3 with oxygen vacancies are studied by employing first-principles calculations based on density function theory. Based on the defects formation energies, we conclude the oxygen vacancies are most stable in their fully charge states. The electronic structures and optical properties of ß-Ga2O3 are calculated by Generalized Gradient Approximation + U formalisms with the Hubbard U parameters set 7.0 eV and 8.5 eV for Ga and O ions, respectively. The calculated bandgap is 4.92 eV, which is consistent with the experimental value. The static real dielectric constants of the defective structures are increased compared with the intrinsic one, which is attributed to the level caused by the Ga-4s states in the bandgap. Extra peaks are introduced in the absorption spectra, which are related to Ga-4s and O-2p states. Experimentally, ß-Ga2O3 films are deposited under different O2 volume percentage with ratio-frequency magnetron sputtering method. The measured results indicate that oxygen vacancies can induce extra emission peaks in the photoluminescence spectrum, the location of these peaks are close to the calculated results. Extra O2 can increase the formation energies of oxygen vacancies and thus reduce oxygen vacancies in ß-Ga2O3.