Single- and Twin-Photons Emitted from Fiber-Coupled Quantum Dots in a Distributed Bragg Reflector Cavity.

In this work, we develop single-mode fiber devices of an InAs/GaAs quantum dot (QD) by bonding a fiber array with large smooth facet, small core, and small numerical aperture to QDs in a distributed Bragg reflector planar cavity with vertical light extraction that prove mode overlap and efficient output for plug-and-play stable use and extensive study. Modulated Si doping as electron reservoir builds electric field and level tunnel coupling to reduce fine-structure splitting (FSS) and populate dominant XX and higher excitons XX+ and XXX. Epoxy package thermal stress induces light hole (lh) with various behaviors related to the donor field: lh h1 confined with more anisotropy shows an additional XZ line (its space to the traditional X lines reflects the field intensity) and larger FSS; lh h2 delocalized to wetting layer shows a fast h2-h1 decay; lh h2 confined shows D3h symmetric higher excitons with slow h2-h1 decay and more confined h1 to raise h1-h1 Coulomb interaction.

Donor-Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride.

Quantum emitters are needed for a myriad of applications ranging from quantum sensing to quantum computing. Hexagonal boron nitride (hBN) quantum emitters are one of the most promising solid-state platforms to date due to their high brightness and stability and the possibility of a spin-photon interface. However, the understanding of the physical origins of the single-photon emitters (SPEs) is still limited. Here we report dense SPEs in hBN across the entire visible spectrum and present evidence that most of these SPEs can be well explained by donor-acceptor pairs (DAPs). On the basis of the DAP transition generation mechanism, we calculated their wavelength fingerprint, matching well with the experimentally observed photoluminescence spectrum. Our work serves as a step forward for the physical understanding of SPEs in hBN and their applications in quantum technologies.

Optical pressure and temperature sensing properties of Nd3+:YTaO4.

The pressure- and temperature-dependent luminescence properties of M'-phase Nd3+:YTaO4 synthesized by a molten salt method are presented. Ten near-infrared emission lines originating from the transitions between the two Stark levels R1,2 of the 3F3/2 state and the five Stark levels Z1,2,3,4,5 of the 4I9/2 state for the doped Nd3+ ions can be clearly identified. All these emission lines are found to shift linearly with pressure in a range up to ∼11 GPa. The R2,1 → Z5 emission lines have larger pressure sensitivities, which are 16.44 and 14.27 cm-1 GPa-1. The intensities of all the emission lines evolve with pressure non-monotonically, and peak at ∼1 GPa. The R1 → Z4,5 and R2 → Z1 emission lines can be obviously narrowed under the hydrostatic pressure, and broadened under the non-hydrostatic pressure, indicating their potential capability for reflecting the characteristic of a pressure environment. The intensity ratio of the R2,1 → Z5 emission lines exhibits a large temperature dependence, with a relative sensitivity between 0.129% and 0.108% K-1 in the physiological temperature range of 290-320 K. Thermal variations of the spectral positions and widths of the R2,1 → Z5 emission lines are also investigated. A high thermal stability for the position of the R2 → Z5 emission line is revealed. Based on the experimental results, the advantages and potential of Nd3+:YTaO4 as a multi-functional sensor for pressure and temperature are discussed.

Self-Induced Dark States in Two-Dimensional Excitons.

We have obtained an ultralong lifetime exciton emission in InAs/GaAs single quantum dots (QDs) when the QD films are transferred onto the Si substrate covered by Ag nanoparticles. It is found that when the separation distance from the QD layer (also the wetting layer) to the Ag nanoparticles is around 19 nm, the QD emission lifetime changes from approximately 1 to 2000 ns. A classical dipole oscillator model is used to quantitatively calculate the spontaneous radiation decay rate of the excitons in the wetting layer (WL), and the simulated calculation result is in good agreement with the experimental one, revealing that the long lifetime exciton emission is due to the existence of the dark state in the WL. The self-induced dark state stems from the destructive interference between the exciton emission field and the induced dipole field of the Ag nanoparticles.

Single-Photon Emission from Point Defects in Aluminum Nitride Films.

Quantum technologies require robust and photostable single-photon emitters. Here, room temperature operated single-photon emissions from isolated defects in aluminum nitride (AlN) films are reported. AlN films were grown on nanopatterned sapphire substrates by metal organic chemical vapor deposition. The observed emission lines range from visible to near-infrared, with highly linear polarization characteristics. The temperature-dependent line width increase shows T3 or single-exponential behavior. First-principle calculations based on density functional theory show that point defect species, such as antisite nitrogen vacancy complex (NAlVN) and divacancy (VAlVN) complexes, are considered to be an important physical origin of observed emission lines ranging from approximately 550 to 1000 nm. The results provide a new platform for on-chip quantum sources.

Anomalous Pressure Characteristics of Defects in Hexagonal Boron Nitride Flakes.

Research on hexagonal boron nitride (hBN) has been intensified recently due to the application of hBN as a promising system of single-photon emitters. To date, the single photon origin remains under debate even though many experiments and theoretical calculations have been performed. We have measured the pressure-dependent photoluminescence (PL) spectra of hBN flakes at low temperatures by using a diamond anvil cell device. The absolute values of the pressure coefficients of discrete PL emission lines are all below 15 meV/GPa, which is much lower than the pressure-induced 36 meV/GPa redshift rate of the hBN bandgap. These PL emission lines originate from atom-like localized defect levels confined within the bandgap of the hBN flakes. Interestingly, the experimental results of the pressure-dependent PL emission lines present three different types of pressure responses corresponding to a redshift (negative pressure coefficient), a blueshift (positive pressure coefficient), or even a sign change from negative to positive. Density functional theory calculations indicate the existence of competition between the intralayer and interlayer interaction contributions, which leads to the different pressure-dependent behaviors of the PL peak shift.

Development and application of piezoelectric driving diamond anvil cell device.

Diamond anvil cell (DAC) technique is widely employed for the high pressure measurements in the field of physics, chemistry, and material research. The new designs of DAC and new techniques for applying pressure have been gradually developed. This paper introduces a piezoelectric driving DAC device to achieve tunable high pressure at low temperature down to 20 K by in situ continuous pressure tuning. The tuning range is about 2-4 GPa depending on the applied electric voltage to piezoelectric lead zirconic titanate ceramic stack. The DAC device is well compatible with the cold chamber of a low temperature cryostat due to its small size and the convenient operation.

Pressure-induced K-Λ crossing in monolayer WSe2.

The energy band structures and related room temperature exciton transitions of monolayer and bilayer tungsten diselenide (WSe2) are investigated using photoluminescence (PL) spectra under hydrostatic pressure up to 5.42 GPa. For monolayer WSe2, it is found that the conduction band Λ valley is 70 ± 30 meV higher than the K valley at zero pressure, and the K-Λ valley crossover happens at a pressure of approximately 2.25 GPa. The PL peak of exciton related to the direct K-K interband transition in monolayer and bilayer WSe2 shows a pressure-induced blue-shift at the rates of 31.5 ± 0.6 and 27 ± 1 meV GPa(-1), respectively. The indirect Λ-K interband transition for monolayer and bilayer WSe2 exhibits a distinctly different pressure response. The pressure coefficient is as small as -3 ± 6 meV GPa(-1) for monolayer, but a much larger value of -22 ± 1 meV GPa(-1) for bilayer WSe2, indicating that the interlayer coupling has a strong effect on the electronic states at the Λ valley.

Probing Spin-Orbit Coupling and Interlayer Coupling in Atomically Thin Molybdenum Disulfide Using Hydrostatic Pressure.

In two-dimensional transition-metal dichalcogenides, both spin-orbit coupling and interlayer coupling play critical roles in the electronic band structure and are desirable for the potential applications in spin electronics. Here, we demonstrate the pressure characteristics of the exciton absorption peaks (so-called excitons A, B and C) in monolayer, bilayer, and trilayer molybdenum disulfide (MoS2) by studying the reflectance spectra under hydrostatic pressure and performing the electronic band structure calculations based on density functional theory to account for the experimental observations. We find that the valence band maximum splitting at the K point in monolayer MoS2, induced by spin-orbit coupling, remains almost unchanged with increasing pressure applied up to 3.98 GPa, indicating that the spin-orbit coupling is insensitive to the pressure. For bilayer and trilayer MoS2, however, the splitting shows an increase with increasing pressure due to the pressure-induced strengthening of the interlayer coupling. The experimental results are in good agreement with the theoretical calculations. Moreover, the exciton C is identified to be the interband transition related to the van Hove singularity located at a special point which is approximately 1/4 of the total length of Γ-K away from the Γ point in the Brillouin zone.

Tuning and identification of interband transitions in monolayer and bilayer molybdenum disulfide using hydrostatic pressure.

Few-layer molybdenum disulfide (MoS2) is advantageous for application in next-generation electronic and optoelectronic devices. For monolayer MoS2, it has been established that both the conduction band minimum (CBM) and the valence band maximum (VBM) occur at the K point in the Brillouin zone. For bilayer MoS2, it is known that the VBM occurs at the Γ point. However, whether the K valley or the Λ valley forms the CBM and the energy difference between them remain disputable. Theoretical calculations have not provided a conclusive answer. In this paper, we demonstrate that a direct K-K to an indirect Λ-K interband transition in bilayer MoS2 can be optically detected by tuning the hydrostatic pressure. A changeover of the CBM from the K valley to the Λ valley is observed to occur under a pressure of approximately 1.5 GPa. The experimental results clearly indicate that the K valley forms the CBM under zero strain, while the Λ valley is approximately 89 ± 9 meV higher in energy.

Self-assembled quantum dot structures in a hexagonal nanowire for quantum photonics.

Two types of quantum nanostructures based on self-assembled GaAs quantumdots embedded into GaAs/AlGaAs hexagonal nanowire systems are reported, opening a new avenue to the fabrication of highly efficient single-photon sources, as well as the design of novel quantum optics experiments and robust quantum optoelectronic devices operating at higher temperature, which are required for practical quantum photonics applications.