Ultrafast Structural Dynamics along the ß-γ Phase Transition Path in MnAs.

We investigate the orthorhombic distortion and the structural dynamics of epitaxial MnAs layers on GaAs(001) using static and time-resolved x-ray diffraction. Laser-induced intensity oscillations of Bragg reflections allow us to identify the optical phonon associated with orthorhombic distortion and to follow its softening along the path towards an undistorted phase of hexagonal symmetry. The frequency of this mode falls in the THz range, in agreement with recent calculations. Incomplete softening suggests that the ß-γ transformation deviates from a purely second-order displacive transition.

van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties.

Stacking two-dimensional materials in so-called van der Waals (vdW) heterostructures, like the combination of GaSe and graphene, provides the ability to obtain hybrid systems that are suitable to design optoelectronic devices. Here, we report the structural and electronic properties of the direct growth of multilayered GaSe by molecular beam epitaxy on graphene. Reflection high-energy electron diffraction images exhibited sharp streaky features indicative of a high-quality GaSe layer produced via a vdW epitaxy. Micro-Raman spectroscopy showed that, after the vdW heterointerface formation, the Raman signature of pristine graphene is preserved. However, the GaSe film tuned the charge density of graphene layer by shifting the Dirac point by about 80 meV toward lower binding energies, attesting to an electron transfer from graphene to GaSe. Angle-resolved photoemission spectroscopy (ARPES) measurements showed that the maximum of the valence band of the few layers of GaSe are located at the Γ point at a binding energy of about -0.73 eV relative to the Fermi level (p-type doping). From the ARPES measurements, a hole effective mass defined along the ΓM direction and equal to about m*/m0 = -1.1 was determined. By coupling the ARPES data with high-resolution X-ray photoemission spectroscopy measurements, the Schottky interface barrier height was estimated to be 1.2 eV. These findings allow a deeper understanding of the interlayer interactions and the electronic structure of the GaSe/graphene vdW heterostructure.

Magnetically Hard Fe3Se4 Embedded in Bi2Se3 Topological Insulator Thin Films Grown by Molecular Beam Epitaxy.

We investigated the structural, magnetic, and electronic properties of Bi2Se3 epilayers containing Fe grown on GaAs(111) by molecular beam epitaxy. It is shown that, in the window of growth parameters leading to Bi2Se3 epilayers with optimized quality, Fe atom clustering leads to the formation of FexSey inclusions. These objects have platelet shape and are embedded within Bi2Se3. Monoclinic Fe3Se4 is identified as the main secondary phase through detailed structural measurements. Due to the presence of the hard ferrimagnetic Fe3Se4 inclusions, the system exhibits a very large coercive field at low temperature and room temperature magnetic ordering. Despite this composite structure and the proximity of a magnetic phase, the surface electronic structure of Bi2Se3 is preserved, as shown by the persistence of a gapless Dirac cone at Γ.

Thermally induced magnetization switching in Fe/MnAs/GaAs(001): selectable magnetic configurations by temperature and field control.

Spintronic devices currently rely on magnetization control by external magnetic fields or spin-polarized currents. Developing temperature-driven magnetization control has potential for achieving enhanced device functionalities. Recently, there has been much interest in thermally induced magnetisation switching (TIMS), where the temperature control of intrinsic material properties drives a deterministic switching without applying external fields. TIMS, mainly investigated in rare-earth-transition-metal ferrimagnets, has also been observed in epitaxial Fe/MnAs/GaAs(001), where it stems from a completely different physical mechanism. In Fe/MnAs temperature actually modifies the surface dipolar fields associated with the MnAs magnetic microstructure. This in turn determines the effective magnetic field acting on the Fe overlayer. In this way one can reverse the Fe magnetization direction by performing thermal cycles at ambient temperatures. Here we use element selective magnetization measurements to demonstrate that various magnetic configurations of the Fe/MnAs/GaAs(001) system are stabilized predictably by acting on the thermal cycle parameters and on the presence of a bias field. We show in particular that the maximum temperature reached during the cycle affects the final magnetic configuration. Our findings show that applications are possible for fast magnetization switching, where local temperature changes are induced by laser excitations.

Low-temperature Raman fingerprints for few-quintuple layer topological insulator Bi2Se3 films epitaxied on GaAs.

Topological insulators (Bi2Se3) of single- and few-quintuple-layer (few-QLs) films were investigated by Raman spectroscopy and epitaxied on a GaAs substrate. At a measurement temperature of 80 K, we observed the emergence of additional A2u and Eu modes (Raman inactive in the bulk crystal) below 9-QLs film thicknesses, assigned to the crystal-symmetry breakdown in ultrathin films. Furthermore, the out-of-plane A1g modes changed in width, frequency, and intensity for decreasing numbers of QL, while the in-plane Eg mode split into three Raman lines, not resolved in previous room temperature experiments. The out-of-plane Raman modes showed a strong Raman resonance at 2.4 eV for around 4-QLs film thickness, and the resonant position of the same modes shifted to 2.2 eV for 18-QLs-thick film. The film thickness-dependence of the phonons frequencies cannot solely be explained within models of weak van der Waals interlayer coupling. The results are discussed in terms of stacking-induced changes in inter- and intralayer bonding and/or the presence of long-range Coulombic interlayer interactions in topological insulator Bi2Se3. This work demonstrates that Raman spectroscopy is sensitive to changes in film thickness over the critical range of 9- to 4-QLs, which coincides with the transition between a gapless topological insulator (occurring above 6-QLs) to a conventional gapped insulator (occurring below 4-QLs).

Large-area and high-quality epitaxial graphene on off-axis SiC wafers.

The growth of large and uniform graphene layers remains very challenging to this day due to the close correlation between the electronic and transport properties and the layer morphology. Here, we report the synthesis of uniform large-scale mono- and bilayers of graphene on off-axis 6H-SiC(0001) substrates. The originality of our approach consists of the fine control of the growth mode of the graphene by precise control of the Si sublimation rate. Moreover, we take advantage of the presence of nanofacets on the off-axis substrate to grow a large and uniform graphene with good long-range order. We believe that our approach represents a significant step toward the scalable synthesis of graphene films with high structural qualities and fine thickness control, in order to develop graphene-based electronic devices.