First-principles demonstration of band filling-induced significant improvement in thermodynamic stability and mechanical properties of Sc[Formula: see text]Ta[Formula: see text]B[Formula: see text] solid solutions.

Mixtures of different metal diborides in the form of solid solutions are promising materials for hard-coating applications. Herein, we study the mixing thermodynamics and the mechanical properties of AlB[Formula: see text]-structured Sc[Formula: see text]Ta[Formula: see text]B[Formula: see text] solid solutions using the first-principles method, based on the density functional theory, and the cluster-expansion formalism. Our thermodynamic investigation reveals that the two diborides readily mix with one another to form a continuous series of stable solid solutions in the pseudo-binary TaB[Formula: see text] [Formula: see text]ScB[Formula: see text] system even at absolute zero. Interestingly, the elastic moduli as well as the hardness of the solid solutions show significant positive deviations from the linear Vegard's rule evaluated between those of ScB[Formula: see text] and TaB[Formula: see text]. In case of Sc[Formula: see text]Ta[Formula: see text]B[Formula: see text], the degrees of deviation from such linear trends can be as large as 25, 20, and 40% for the shear modulus, the Young's modulus, and the hardness, respectively. The improvement in the stability as well as the mechanical properties of Sc[Formula: see text]Ta[Formula: see text]B[Formula: see text] solid solutions relative to their constituent compounds is found to be related to the effect of electronic band filling, induced upon mixing TaB[Formula: see text] with ScB[Formula: see text]. These findings not only demonstrate the prominent role of band filling in enhancing the stability and the mechanical properties of Sc[Formula: see text]Ta[Formula: see text]B[Formula: see text], but also it can potentially open up a possibility for designing stable/metastable metal diboride-based solid solutions with superior and widely tunable mechanical properties for hard-coating applications.

High-throughput materials screening algorithm based on first-principles density functional theory and artificial neural network for high-entropy alloys.

This work introduced the high-throughput phase prediction of PtPd-based high-entropy alloys via the algorithm based on a combined Korringa-Kohn-Rostoker coherent potential approximation (KKR-CPA) and artificial neural network (ANN) technique. As the first step, the KKR-CPA was employed to generate 2,720 data of formation energy and lattice parameters in the framework of the first-principles density functional theory. Following the data generation, 15 features were selected and verified for all HEA systems in each phase (FCC and BCC) via ANN. The algorithm exhibited high accuracy for all four prediction models on 36,556 data from 9139 HEA systems with 137,085 features, verified by R2 closed to unity and the mean relative error (MRE) within 5%. From this dataset comprising 5002 and 4137 systems of FCC and BCC phases, it can be realized based on the highest tendency of HEA phase formation that (1) Sc, Co, Cu, Zn, Y, Ru, Cd, Os, Ir, Hg, Al, Si, P, As, and Tl favor FCC phase, (2) Hf, Ga, In, Sn, Pb, and Bi favor BCC phase, and (3) Ti, V, Cr, Mn, Fe, Ni, Zr, Nb, Mo, Tc, Rh, Ag, Ta, W, Re, Au, Ge, and Sb can be found in both FCC and BCC phases with comparable tendency, where all predictions are in good agreement with the data from the literature. Thus, the combination of KKR-CPA and ANN can reduce the computational cost for the screening of PtPd-based HEA and accurately predict the structure, i.e., FCC, BCC, etc.

Presence and absence of intrinsic magnetism in graphitic carbon nitrides designed through C-N-H building blocks.

We use the first principle calculation to investigate the intrinsic magnetism of graphitic carbon nitrides (GCNs). By preserving three-fold symmetry, the GCN building blocks have been built out of different combinations between 6 components which are C atom, N atom, s-triazine, heptazine, heptazine with C atom at the center, and benzimidazole-like component. That results in 20 phases where 11 phases have been previously reported, and 9 phases are newly derived. The partial density of states and charge density have been analyzed through 20 phases to understand the origin of the presence and absence of intrinsic magnetism in GCNs. The intrinsic magnetism will be present not only because the GCNs comprising of radical components but also the [Formula: see text]-conjugated states are not the valence maximum to break the delocalization of unpaired electrons. The building blocks are also employed to study alloys between g-[Formula: see text] and g-[Formula: see text]. The magnetization of the alloys has been found to be linearly dependent on a number of C atoms in the unit cell and some magnetic alloys are energetically favorable. Moreover, the intrinsic magnetism in GCNs can be promoted or demoted by passivating with a H atom depending on the passivated positions.

Mysterious SiB3: Identifying the Relation between α- and ß-SiB3.

Binary silicon boride SiB3 has been reported to occur in two forms, as disordered and nonstoichiometric α-SiB3-x , which relates to the α-rhombohedral phase of boron, and as strictly ordered and stoichiometric ß-SiB3. Similar to other boron-rich icosahedral solids, these SiB3 phases represent potentially interesting refractory materials. However, their thermal stability, formation conditions, and thermodynamic relation are poorly understood. Here, we map the formation conditions of α-SiB3-x and ß-SiB3 and analyze their relative thermodynamic stabilities. α-SiB3-x is metastable (with respect to ß-SiB3 and Si), and its formation is kinetically driven. Pure polycrystalline bulk samples may be obtained within hours when heating stoichiometric mixtures of elemental silicon and boron at temperatures 1200-1300 °C. At the same time, α-SiB3-x decomposes into SiB6 and Si, and optimum time-temperature synthesis conditions represent a trade-off between rates of formation and decomposition. The formation of stable ß-SiB3 was observed after prolonged treatment (days to weeks) of elemental mixtures with ratios Si/B = 1:1-1:4 at temperatures 1175-1200 °C. The application of high pressures greatly improves the kinetics of SiB3 formation and allows decoupling of SiB3 formation from decomposition. Quantitative formation of ß-SiB3 was seen at 1100 °C for samples pressurized to 5.5-8 GPa. ß-SiB3 decomposes peritectoidally at temperatures between 1250 and 1300 °C. The highly ordered nature of ß-SiB3 is reflected in its Raman spectrum, which features narrow and distinct lines. In contrast, the Raman spectrum of α-SiB3-x is characterized by broad bands, which show a clear relation to the vibrational modes of isostructural, ordered B6P. The detailed composition and structural properties of disordered α-SiB3-x were ascertained by a combination of single-crystal X-ray diffraction and 29Si magic angle spinning NMR experiments. Notably, the compositions of polycrystalline bulk samples (obtained at T ≤ 1200 °C) and single crystal samples (obtained from Si-rich molten Si-B mixtures at T > 1400 °C) are different, SiB2.93(7) and SiB2.64(2), respectively. The incorporation of Si in the polar position of B12 icosahedra results in highly strained cluster units. This disorder feature was accounted for in the refined crystal structure model by splitting the polar position into three sites. The electron-precise composition of α-SiB3-x is SiB2.5 and corresponds to the incorporation of, on average, two Si atoms in each B12 icosahedron. Accordingly, α-SiB3-x constitutes a mixture of B10Si2 and B11Si clusters. The structural and phase stability of α-SiB3-x were explored using a first-principles cluster expansion. The most stable composition at 0 K is SiB2.5, which however is unstable with respect to the decomposition ß-SiB3 + Si. Modeling of the configurational and vibrational entropies suggests that α-SiB3-x only becomes more stable than ß-SiB3 at temperatures above its decomposition into SiB6 and Si. Hence, we conclude that α-SiB3-x is metastable at all temperatures. Density functional theory electronic structure calculations yield band gaps of similar size for electron-precise α-SiB2.5 and ß-SiB3, whereas α-SiB3 represents a p-type conductor.

Theoretical predictions for low-temperature phases, softening of phonons and elastic stiffnesses, and electronic properties of sodium peroxide under high pressure.

High-pressure phase stabilities up to 600 K and the related properties of Na2O2 under pressures up to 300 GPa were investigated using first-principles calculations and the quasi-harmonic approximation. Two high-pressure phases of Na2O2 that are thermodynamically and dynamically stable were predicted consisting of the Amm2 (distorted P6̄2m) and the P21/c structures, which are stable at low temperature in the pressure range of 0-22 GPa and 22-28 GPa, respectively. However, the P6̄2m and Pbam structures become the most stable instead of the Amm2 and P21/c structures at the elevated temperatures, respectively. Interestingly, the softening of some phonon modes and the decreasing of some elastic stiffnesses in the Amm2 structure were also predicted in the pressure ranges of 2-3 GPa and 9-10 GPa. This leads to the decreasing of phonon free energy and the increasing of the ELF value in the same pressure ranges. The HSE06 band gaps suggest that all phases are insulators, and they increase with increasing pressure. Our findings provide the P-T phase diagram of Na2O2, which may be useful for investigating the thermodynamic properties and experimental verification.