RESUMO
The nickel-rich region of the system Ce-Ni-Si has been reinvestigated utilizing X-ray single-crystal, powder, and electron diffraction as well as electron microprobe and thermal analyses. Two novel hexagonal compounds, τ-Ce20+xNi36+ySi30-z and τ'-Ce30+xNi50+ySi42-z, were identified. The crystal structure of τ-Ce20+xNi36+ySi30-z was derived from single-crystal X-ray diffraction and found to be isotypic with the Sm10Ni20.8P15-type structure (S.G. P63/m, x = 1.8, y = 3.0, z = 1.8, a = 2.07156(2) nm, c = 0.39990(1) nm, RF = 0.048). Rietveld refinement of τ'-Ce30+xNi50+ySi42-z revealed isotypism with Tb15Ni28P21 (S.G. P63/m, a = 2.46926(13) nm, c = 0.40019(3) nm, RF = 0.058). The compound Ce3Ni4Si2 from X-ray single-crystal analysis was found to crystallize in a novel structure type with monoclinic unit cells (S.G. C2/c, a = 1.54708(3) nm, b = 0.58677(1) nm, c = 0.74331(1) nm, ß = 102.985(1)°, RF = 0.017). This compound belongs to a new homologue series in the RE-Ni-Si system (RE = La and Ce) with general formula of RE(3×2n)Ni(3×2n + 1)Si(2n+1); n = 0,1, ..., ∞. The crystal structure of this series is characterized by alternating numbers (2n) of corner-sharing Si-polyhedral blocks sandwiched between zigzag nickel chains. Higher-order members of this series are produced by the formation of more corner-sharing Si-polyhedral blocks due to removal of nickel chains.
RESUMO
The structural and thermoelectric properties of the filled skutterudite (Sm,Gd)y(FexNi1-x)4Sb12 were investigated and critically compared to the ones in the Sm-containing system with the aim of unravelling the effect of double filling on filling fraction and thermal conductivity. Several samples (x = 0.50-0.90 and y = 0.15-0.48) were prepared by melting-sintering, and two of them were densified by spark plasma sintering in order to study their thermoelectric features. The crystallographic study enables the recognition of the role of the filler size in ruling the filling fraction and the compositional location of the p/n crossover: It has been found that the former lowers and the latter moves toward lower x values with the reduction of the filler ionic size, as a consequence of the progressively weaker interaction of the filler with the Sb12 cavity. The analysis of thermoelectric properties indicates that, despite the Sm3+/Gd3+ small mass difference, the contemporary presence of these ions in the 2a site significantly affects the thermal conductivity of both p- and n-compositions. This occurs by reducing its value with respect to the Sm-filled compound at each temperature considered, and making the overall thermoelectric performance of the system comparable to several multi-filled (Fe, Ni)-based skutterudites described in the literature.
RESUMO
Phase relations and crystal structures have been evaluated within the sections LaNi2Si2-LaZn2Si2 and CeNi2Si2-CeZn2Si2 at 800 °C using electron microprobe analysis and X-ray powder and single crystal structure analyses. Although the systems La-Zn-Si and Ce-Zn-Si at 800 °C do not reveal compounds such as "LaZn2Si2" or "CeZn2Si2", solid solutions {La,Ce}(Ni1-xZnx)2Si2 exist with the Ni/Zn substitution starting from {La,Ce}Ni2Si2 (ThCr2Si2-type; I4/mmm) up to x = 0.18 for Ce(Ni1-xZnx)2Si2 and x = 0.125 for La(Ni1-xZnx)2Si2. For higher Zn-contents 0.25 ≤ x ≤ 0.55 the solutions adopt the CaBe2Ge2-type (P4/nmm). The investigations are backed by single crystal X-ray diffraction data for Ce(Ni0.61Zn0.39)2Si2 (P4/nmm; a = 0.41022(1) nm, c = 0.98146(4) nm; RF = 0.012) and by Rietveld refinement for La(Ni0.56Zn0.44)2Si2 (P4/nmm; a = 0.41680(6) nm, c = 0.99364(4) nm; RF = 0.043). Interestingly, the Ce-Zn-Si system contains a ternary phase CeZn2(Si1-xZnx)2 of the ThCr2Si2 structure type (0.25 ≤ x ≤ 0.30 at 600 °C), which forms peritectically at T = 695 °C but does not include the composition "CeZn2Si2". The primitive high temperature tetragonal phase with the CaBe2Ge2-type has also been observed for the first time in the Ce-Ni-Si system at CeNi2+xSi2-x, x = 0.33 (single crystal data, P4/nmm; a = 0.40150(2) nm, c = 0.95210(2) nm; RF = 0.0163). Physical properties (from 400 mK to 300 K) including specific heat, electrical resistivity and magnetic susceptibility have been elucidated for Ce(Ni0.61Zn0.39)2Si2 and La(Ni0.56Zn0.44)2Si2. Ce(Ni0.61Zn0.39)2Si2 exhibits a Kondo-type ground state. Low temperature specific heat data of La(Ni0.56Zn0.44)2Si2 suggest a spin fluctuation scenario with an enhanced value of the Sommerfeld constant.