RESUMO
Additive engineering has emerged as a promising strategy to address the inherent instability challenges of perovskite solar cells (PSCs) in the pursuit of commercial viability. However, achieving multifunctionality using a singular additive remains a considerable challenge. In this study, a novel comb-like multifunctional perfluoroalkyl-g-polyethylenimmonium iodide (FPEI·HI) as additives to the PbI2 precursor solution to facilitate the formation of high-quality and water-resistant perovskite films is presented. FPEI·HI establishes robust interactions with both formamidinium iodide (FAI) and PbI2, mediated by hydrogen bonding and Lewis acid-base interactions. These interactions play a pivotal role in simultaneously passivating negative and positive charged defects within the perovskite structure. Furthermore, the inclusion of perfluoroalkyl chains serves as resilience against moisture intrusion. As a consequence of these effects, a notably high device efficiency of 24.29% is achieved, demonstrating comprehensive improvement in various photovoltaic parameters compared to the control device (22.51%). Notably, unencapsulated devices exhibit remarkable stability in high-humidity environments, retaining 90% of their initial efficiency even after 2500 h of storage. This work underscores the efficacy of FPEI·HI as a critical enabler for enhancing the stability and efficiency of perovskite solar cells, marking a significant stride toward their commercialization.
RESUMO
A dopant-free polymeric hole selective contact (HSC) layer is ubiquitous for stable perovskite solar cells (PSCs). However, the intrinsic nonwetting nature of the polymeric HSC impedes the uniform spreading of the perovskite precursor solution, generating a terrible buried interface. Here, we dexterously tackle this dilemma from the perspective of dispersive and polar component surface energies of the HSC layer. A novel triarylamine-based HSC material, poly[bis(4-phenyl)(2,4-dimethoxyphenyl)amine] (2MeO-PTAA), was designed by introducing the polar methoxy groups to the para and ortho positions of the dangling benzene. These nonsymmetrically substituted electron-donating methoxy groups enhanced the polar components of surface energy, allowing more tight interfacial contact between the HSC layer and perovskite and facilitating hole extraction. When utilized as the dopant-free HSC layer in inverted PSCs, the 2MeO-PTAA-based device with CH3NH3PbI3 as the absorber exhibited an encouraging power conversion efficiency of 20.23% and a high fill factor of 84.31% with negligible hysteresis. Finally, a revised detailed balance model was used to verify the drastically lessened surface defect-induced recombination loss and shunt resistance loss in 2MeO-PTAA-based devices. This work demonstrates a facile and efficient way to modulate the buried interface and shed light on the direction to further improve the photovoltaic performance of inverted PSCs with other types of perovskites.