Synthesis of 2D Gallium Sulfide with Ultraviolet Emission by MOCVD.

Two-dimensional (2D) materials exhibit the potential to transform semiconductor technology. Their rich compositional and stacking varieties allow tailoring materials' properties toward device applications. Monolayer to multilayer gallium sulfide (GaS) with its ultraviolet band gap, which can be tuned by varying the layer number, holds promise for solar-blind photodiodes and light-emitting diodes as applications. However, achieving commercial viability requires wafer-scale integration, contrasting with established, limited methods such as mechanical exfoliation. Here the one-step synthesis of 2D GaS is introduced via metal-organic chemical vapor deposition on sapphire substrates. The pulsed-mode deposition of industry-standard precursors promotes 2D growth by inhibiting the vapor phase and on-surface pre-reactions. The interface chemistry with the growth of a Ga adlayer that results in an epitaxial relationship is revealed. Probing structure and composition validate thin-film quality and 2D nature with the possibility to control the thickness by the number of GaS pulses. The results highlight the adaptability of established growth facilities for producing atomically thin to multilayered 2D semiconductor materials, paving the way for practical applications.

Charge Transfer Excitation and Asymmetric Energy Transfer at the Interface of Pentacene-Perfluoropentacene Heterostacks.

High-performance solar cells demand efficient charge-carrier excitation, separation, and extraction. These requirements hold particularly true for molecular photovoltaics, where large exciton binding energies render charge separation challenging at their commonly complex donor-acceptor interface structure. Among others, charge-transfer (CT) states are considered to be important precursors for exciton dissociation and charge separation. However, the general nature of CT excitons and their formation pathways remain unclear. Layered quasiplanar crystalline molecular heterostructures of the prototypical donor-acceptor system pentacene-perfluoropentacene studied at cryogenic temperatures are a paramount model system to gain insights into the underlying physical mechanism. In particular, a detailed experiment-theory analysis on a layered heterojunction featuring perfluoropentacene in its π-stacked polymorph and pentacene in the Siegrist phase indicates that exciton diffusion in unitary films can influence the formation efficiency of CT excitons localized at internal interfaces for these conditions. The correlation of the structural characteristics, that is, the molecular arrangement at the interfaces, with their absorption and photoluminescence excitation spectra is consistent with exciton transfer from pentacene to the CT exciton state only, whereas no transfer of excitons from the perfluoropentacene is detected. Electronic structure calculations of the model systems and investigation of coupling matrix elements between the various electronic states involved suggest hampered exciton diffusion toward the internal interface in the perfluoropentacene films. The asymmetric energy landscape around an idealized internal donor-acceptor interface thus is identified as a reason for asymmetric energy transfer. Thus, long-range effects apparently can influence charge separation in crystalline molecular heterostructures, similar to band gap bowing, which is well established for inorganic pn-junctions.