Comparison between periodic and stochastic parabolic light trapping structures for thin-film microcrystalline Silicon solar cells.

Light trapping is of very high importance for silicon photovoltaics (PV) and especially for thin-film silicon solar cells. In this paper we investigate and compare theoretically the light trapping properties of periodic and stochastic structures having similar geometrical features. The theoretical investigations are based on the actual surface geometry of a scattering structure, characterized by an atomic force microscope. This structure is used for light trapping in thin-film microcrystalline silicon solar cells. Very good agreement is found in a first comparison between simulation and experimental results. The geometrical parameters of the stochastic structure are varied and it is found that the light trapping mainly depends on the aspect ratio (length/height). Furthermore, the maximum possible light trapping with this kind of stochastic structure geometry is investigated. In a second step, the stochastic structure is analysed and typical geometrical features are extracted, which are then arranged in a periodic structure. Investigating the light trapping properties of the periodic structure, we find that it performs very similar to the stochastic structure, in agreement with reports in literature. From the obtained results we conclude that a potential advantage of periodic structures for PV applications will very likely not be found in the absorption enhancement in the solar cell material. However, uniformity and higher definition in production of these structures can lead to potential improvements concerning electrical characteristics and parasitic absorption, e.g. in a back reflector.

Intermediate high index layer for laser mode tuning in organic semiconductor lasers.

We modified the optical properties of organic semiconductor distributed feedback lasers by introducing a high refractive index layer consisting of tantalum pentoxide between the substrate and the active material layer. A thin film of tris-(8-hydroxyquinoline) aluminium doped with the laser dye 4-dicyanomethylene-2-methyl-6-(p-dimethylamino-styryl)-4H-pyran was used as the active layer. By varying the intermediate layer thickness we could change the effective refractive index of the guided laser mode and thus the laser wavelength. With this technique we were able to tune the laser emission range between 613 nm and 667 nm. For high index layer thicknesses higher than 40 nm the laser operated on the TE(1)-mode rather than the fundamental TE(0)-mode.