A next-generation transistor with low supply voltage operation constructed based on 2D materials' metal-semiconductor phase transition.

Power dissipation, a fundamental limitation for realizing high-performance electronic devices, may be effectively reduced by an external supply voltage. However, a small supply voltage simultaneously brings another serious challenge, that is, a remarkable device inability in transistors. To deal with this issue, we propose a new transistor design based on the metal-semiconductor phase transition in a AsGeC3 monolayer, which provides a switching mechanism of band-to-band tunneling at on- and off-states by gate-voltage modulation. Our first-principles calculations uncover that the monolayer AsGeC3 field-effect transistors (FETs) with gate lengths of 5, 4, and 3 nm may meet well the requirements for on-state current (Ion), power dissipation (PDP), and delay period (τ) as outlined by the International Technology Roadmap for Semiconductors (ITRS) in 2013 to achieve higher performance by the year 2028. Importantly, high performances are achieved only under a very low supply voltage (VDD = 0.05/0.10 V). Significantly, the AsGeC3 FETs exhibit remarkably lower values of both PDP and τ than those of nearly all the transistors reported up to date. These novel 2D metal-semiconductor phase transition-based FETs open up a new door for designing next-generation low-power electronic devices.

Persistent Chirality-Induced Spin-Selectivity Effect in Circular Helix Molecules.

The spin-orbit coupling (SOC), the dynamics of the nonequilibrium transport process, and the breaking of time-reversal and space-inversion symmetries have been regarded as key factors for the emergence of chirality-induced spin selectivity (CISS) and chirality-dependent spin currents in helix molecules. In this work, we demonstrated the generation of persistent CISS currents in various circular single-stranded DNAs and 310-helix proteins for the first time, regardless of whether an external magnetic flux is applied or not. This new CISS effect presents only in equilibrium transport processes, distinct from the traditional CISS observed in nonequilibrium transport processes and linear helix molecules; we term it as the PCISS effect. Notably, PCISS manifests irrespective of whether the SOC is chirality-driven or stems from heavy-metal substrates, making it an efficient way to generate chirality-locked pure spin currents. Our research establishes a novel paradigm for examining the underlying physics of the CISS effect.

Spacer Conformation Induced Multiple Hydrogen Bonds in 2D Perovskite toward Highly Efficient Optoelectronic Devices.

Two-dimensional (2D) Dion-Jacobson (DJ) perovskites typically outperform Ruddlesden-Popper (RP) analogs in terms of photodetection (PD). However, the mechanism behind this enhanced performance remains elusive. Theoretical calculations for elucidating interlayer spacer conformation-induced multiple hydrogen bonds in 2D perovskite are presented, along with the synthesis of DPAPbBr4 (DPB) single crystals (SCs) and their PD properties under X-ray/ultraviolet (UV) excitation. The high-quality DPB SC enhances PD with exceptional photoresponse attributes, including a high on/off ratio (4.89 × 104), high responsivity (2.44 A W⁻1), along with large dynamic linear range (154 dB) and low detection limit (7.1 nW cm⁻2), which are currently the best results among 2D perovskite SC detectors, respectively. Importantly, high-resolution images are obtained under UV illumination with weak light levels. The SC X-ray detector exhibits a high sensitivity of 663 µC Gyair⁻1 cm-2 at 10 V and a detection limit of 1.44 µGyair s⁻1. This study explores 2D DJ perovskites for efficient and innovative optoelectronic applications.

The device performance limit of in-plane monolayer VTe2/WTe2 heterojunction-based field-effect transistors.

To overcome the scaling restriction on silicon-based field-effect transistors (FETs), two-dimensional (2D) transition metal dichalcogenides (TMDs) have been strongly proposed as alternative materials. To explore the device performance limit of TMD-based FETs, in this work, the ab initio quantum transport approach is utilized to study the transport properties of monolayer VTe2/WTe2 heterojunction-based FETs possessing double gates (DGs) with a 5 nm gate length (Lg). Our theoretical simulations demonstrate that the DG-cold-source VTe2/WTe2 FETs with a 5 nm Lg and 2 or 3 nm proper underlap (UL) meet the basic requirements of the on-state current (Ion), power dissipation (PDP), and delay time (τ) for the 2028 needs of the International Technology Roadmap for Semiconductor (ITRS) 2013, which ensures their high-performance and low-power-dissipation device applications. Moreover, the DG-cold-source VTe2/WTe2-based FETs with a 3 nm Lg and 2 or 3 nm UL meet the high-performance requirements of Ion, τ, and PDP for the 2028 needs of ITRS 2013. Additionally, by further considering the negative capacitance technology in devices, the parameters τ, Ion, and PDP of the VTe2/WTe2-based FETs with a 1 nm Lg and 3 nm UL meet well with the 2028 needs for ITRS 2013 towards high-performance device applications. Our theoretical results uncover that the 2D DG-cold-source VTe2/WTe2 FETs can be used as a new kind of promising material candidate to drive the scaling of Moore's law down to 1 nm.

Spin-Dependent Destructive and Constructive Quantum Interference Associated with Chirality-Induced Spin Selectivity in Single Circular Helix Molecules.

Chirality-induced spin selectivity (CISS) effect in straight helical molecules has received intense studies in past decade; however, the CISS effect in circular helical molecules (CHMs) has still rarely been explored. Here, we have constructed single CHMs having chirality-induced spin-orbit coupling (SOC) and connected by two nonmagnetic leads and successfully gained the required conditions for CISS effect occurring in CHMs for the first time. Our results uncover that only when the CHMs form a closed loop and when the lattice positions are coupled asymmetrically with both leads does the CISS effect occur. More importantly, the CISS-associated spin-dependent destructive and constructive quantum interference (QI) together with their phase transition appears in CHMs. The combination of CISS effect and spin-dependent QI phenomena opens up a new door to understand the underlying physics of the CISS effect in helical molecules.

Multi-Fold Fan-Shape Surface State Induced by an Isolated Weyl Phonon Beyond No-Go Theorem.

Absence of any surface arc state has been regarded as the fundamental property of singular Weyl points, because they are circumvented from the Nielsen-Ninomiya no-go theorem. In this work, through systematic investigations on topological properties of isolated Weyl phonons (IWPs) surrounded by closed Weyl nodal walls (WNWs), which are located at the Brillouin zone (BZ) boundaries of bosonic systems, it uncovers that a new kind of phononic surface state, that is, the multi-fold fan-shape surface state named by us, is exhibited to connect the projections of IWP and WNWs. Importantly, the number of fan leaves in this surface state is associated with the Chern number of IWP. Moreover, the topological features of charge-two IWP in K2 Mg2 O3 (SG No. 96) and charge-four IWP in Nb3 Al2 N (SG No. 213) confirm further the above fundamental properties of this kind of surface state. The theoretical work not only provides an effective way to seek for IWPs as well as to determine their Chern number in real materials, but also uncovers a new class of surface states in the topological Weyl complex composed of IWPs and WNWs.

Quintuple Function Integration in Two-Dimensional Cr(II) Five-Membered Heterocyclic Metal Organic Frameworks via Tuning Ligand Spin and Lattice Symmetry.

Two-dimensional (2D) semiconductors (SCs) integrated with two or more functions are the cornerstone for constructing multifunctional nanodevices but remain largely limited. Here, by tuning the spin state of organic linkers and the symmetry/topology of crystal lattices, we predict a class of unprecedented multifunctional SCs in 2D Cr(II) five-membered heterocyclic metal organic frameworks that simultaneously possess auxetic effect, room-temperature ferrimagnetism, chiral ferroelectricity (FE), electrically reversible spin polarization, and topological nodal lines/points. Taking 2D Cr(TDZ)2 (TDZ = 1.2.5-thiadiazole) as an exemplification, the auxetic effect is produced by the antitetra-chiral lattice structure. The high temperature ferrimagnetism originates from the strong d-p direct magnetic exchange interaction between Cr cations and TDZ doublet radical anions. Meanwhile, the clockwise-counterclockwise alignment of TDZ's dipoles results in unique 2D chiral FE with atomic-scale vortex-antivortex states. 2D Cr(TDZ)2 is an intrinsic bipolar magnetic SC where half-metallic conduction with switchable spin-polarization direction can be induced by applying a gate voltage. In addition, the symmetry of the little group C4 of the lattice structure endows 2D Cr(TDZ)2 with topological nodal lines and a quadratic nodal point in the Brillouin zone near the Fermi level.

Nonlocal Manipulation of Magnetism in an Itinerant Two-Dimensional Ferromagnet.

Two-dimensional (2D) magnets are crucial in the construction of 2D magnetic and spintronic devices. Many devices, including spin valves and multiple tunneling junctions, have been developed by vertically stacking 2D magnets with other functional blocks. However, owing to limited local interactions at the interfaces, the device structures are typically extremely complex. To solve this problem, the nonlocal manipulation of magnetism may be a good solution. In this study, we use the magneto-optical Kerr effect technique to demonstrate the nonlocal manipulation of magnetism in an itinerant 2D ferromagnet, Fe3GeTe2 (FGT), whose magnetism can be manipulated via an antiferromagnet/ferromagnet interface or a current-induced spin-orbital torque placed distant from the local site. It is discovered that the coupling of a small piece of MnPS3 (∼40 µm2) with FGT can significantly enhance the coercive field and emergence of exchange bias in the entire FGT flake (∼2000 µm2). Moreover, FGT flakes with different thicknesses have the same coercive field at low temperatures if they are coupled together. Our study provides an understanding of the basic magnetism of 2D itinerant ferromagnets as well as opportunities for engineering magnetism with an additional degree of freedom.

Spin-Seebeck effect and thermal colossal magnetoresistance in the narrowest zigzag graphene nanoribbons.

Device miniaturization and low-energy dissipation are two urgent requirements in future spintronics devices. The narrowest zigzag graphene nanoribbons (ZGNRs), which are composed of just two coupled carbon-atom chains connected with carbon tetragons, are promising candidates that meet both of the above requirements well. Using the first-principles calculations combined with non-equilibrium Green's function approach, thermal spin-dependent transport through this kind of narrow ZGNR is investigated, and several exotic thermal spin-resolved transport properties are uncovered: (i) when an external magnetic field is applied, the ZGNRs are transited from the intrinsic semiconducting to the metallic state, and the thermal colossal magnetoresistance effect occurs with order of magnitudes up to 104 at room temperature; (ii) the thermal spin-dependent currents display a thermal negative differential resistance effect, and a well-defined spin-Seebeck effect (SSE) together with a pure thermal spin current occurs; and (iii) under suitable device temperature settings, a nearly perfect spin-filtering effect occurs in these narrowest ZGNRs. The theoretical results not only uncover the narrowest nanoribbon structures to realize the SSE and other inspiring thermal spin transport features, but also push carbon-based material candidates towards thermoelectric conversion device applications.

Thermal transport and spin-dependent Seebeck effect in parallel step-like zigzag graphene nanoribbon junctions.

By using nonequilibrium molecular dynamics, thermal transport through a series of parallel step-like graphene nanoribbon (GNR) junctions is investigated. The theoretical results show that the thermal current flows preferentially from wide GNRs to narrow ones, displaying a pronounced thermal rectification effect. Moreover, several step-like GNR-based devices are designed, and the thermally driven spin-dependent currents are calculated by using density functional theory combined with the nonequilibrium Green's function approach. We find that thermal spin-dependent currents with opposite flow directions are generated when a temperature gradient is applied along the GNRs, indicating the occurrence of a spin-dependent Seebeck effect (SDSE). More interestingly, a negative differential SDSE occurs in the thermal spin currents, and the odd and even law appears in the spin-dependent currents, thermopowers and thermoelectric conversion efficiencies. Our theoretical results indicate that the parallel step-like GNRs are potential candidates to design spin caloritronics devices hosting thermal rectification and multiple thermal-spin transport functionalities.

One-dimensional transition metal dihalide nanowires as robust bipolar magnetic semiconductors.

One-dimensional (1D) materials with robust ferromagnetic ground states are difficult to achieve but provide a significant platform for potential spintronic device applications in future. Herein, a new family of 1D transition metal dihalide (TMCl2; where TM = Cu, Co, Cr) nanowires are proposed by using first-principles calculations. Their dynamic stability is ensured by Born-Oppenheimer molecular dynamics simulations. The electronic structures demonstrate that both CoCl2 and CuCl2 nanowires are promising bipolar magnetic semiconductors (BMSs) and can be converted into 1D half-metal materials by a small amount of carrier doping. The CrCl2 nanowire is an antiferromagnetic semiconductor (AFS). The formation of a BMS is attributed to the superexchange coupling between the Co/Cu atoms through the 3p orbitals in the Cl atoms. By using Monte Carlo simulations, we found that the CoCl2 nanowire has a Curie point of 6 K, while the CuCl2 nanowire has a corresponding Curie point of 14 K. Our results allow us to put forward a strategy to realize 1D BMSs and to design low-dimensional AF spintronic devices.

Categories of Phononic Topological Weyl Open Nodal Lines and a Potential Material Candidate: Rb2Sn2O3.

The phononic topological Weyl closed nodal lines, including Weyl nodal rings, nodal chains, nodal nets, nodal links, and nodal knots, have been widely studied. The phononic topological Weyl open nodal lines (PTWONLs), however, have not been well investigated so far. By analyzing the coexistence of parity inversion and time-reversal symmetries, we found that the PTWONLs can be divided into three categories, with surface states hosting different shapes and positions in the Brillouin zone (BZ). Specifically, semiconducting Rb2Sn2O3 was found to exhibit perfect PTWONLs in its phonon spectrum, which fills up one of the categories. Numerical calculations showed that the drumhead-like surface states exist on the (010) surface and six PTWONLs appear in the first BZ due to the C3 rotation symmetry in the crystal structure. Their topological nontrivial nature was confirmed by calculating the Berry phase and by the linear phononic bands around the Weyl points. These theoretical findings provide a deep understanding into the phononic Weyl-open-nodal-line physics, and a promising candidate for experimental verification.

Sodium bismuth dichalcogenides: candidates for ferroelectric high-mobility semiconductors for multifunctional applications.

The combination of ferroelectricity with narrow-gap high-mobility semiconductors may not only entail both functions of nonvolatile memory and efficient manipulation of signals, but may also facilitate efficient ferroelectric photovoltaics and thermoelectrics. However, these applications are hindered by the wide gap and poor mobility of current ferroelectrics. A recent study (J. Am. Chem. Soc., 2018, 140, 3736) reported a facile, general, low-temperature, and size tunable solution phase synthesis of NaBiS2 and NaBiSe2 that are made of relatively abundant or biocompatible elements, which enables their large-scale practical applications. Herein we show first-principles evidence of their ferroelectricity with a large polarization (∼33 µC cm-2), a moderate bandgap (∼1.6 eV) and a high electron-mobility (∼104 cm2 V-1 s-1). Although they have a relatively small switching barrier, their ferroelectricity can be robust under ambient conditions with enhanced polarization upon either application of a small tensile strain or ion doping, where distortion can be increased and multiferroics may also be obtained, despite reduced mobility. Considering previous reports on photovoltaics and thermoelectrics of similar compounds, sodium bismuth dichalcogenides might be tuned for higher performance with the coexistence of these desirable properties.

New topological states in HgTe quantum wells from defect patterning.

To explore new methods for the realization of the quantum spin Hall (QSH) effect in two-dimensional (2D) materials, we have constructed a honeycomb geometry (HG) by etching rows of hexagonal holes in HgTe quantum wells (QWs). Theoretical calculations show that multiple Dirac cones can be produced by HG, regardless of whether the band inversion occurs or not. Furthermore, the topological states originating from a narrow HG region in a wide ribbon show strong localization at the physical edges of the ribbon, making them easy to manipulate and exploit. When the band inversion condition for QW states is satisfied, the topological states generated by two different mechanisms may coexist. Our studies pave the way to produce and control multiple QSH states in 2D materials as desired for the design of innovative spintronic materials.

Spin caloritronics in armchair silicene nanoribbons with sp 3 and sp 2-type alternating hybridizations.

Finite-layer nanoribbon materials have long been considered as potential candidates for nanodevices with novel quantum effects. Here we constructed a series of ferromagnetic armchair silicene nanoribbons (ASiNRs) with sp 3 and sp 2-type alternating hybridizations, and found that the ASiNRs with different widths are localized in different spin-resolved electronic states. As the width parameter N is increased from 5 to 22, the ASiNR transits from indirect-gap half metallicity (HM), to indirect-gap spin semiconductor (SC), then to direct-gap SC and finally to direct-gap HM. When a temperature gradient is produced along the nanoribbons, the spin-dependent currents with the opposite flow directions are driven and a nearly perfect spin-dependent Seebeck effect (SDSE) occurs. Moreover, attributing to symmetrical spin-resolved transport channels, nearly pure thermal spin current without any accompanying charge current can be generated. In addition, for some ASiNRs with proper widths, both the thermal spin-up current and spin-down one are contributed by the electrons in energy valleys, resulting in a well-defined valley-dependent SDSE. These theoretical findings suggest that the ASiNRs with the sp 3 and sp 2-type alternating hybridizations can be outstanding candidates for future spin caloritronic devices.

Proton transfer ferroelectricity/multiferroicity in rutile oxyhydroxides.

Oxyhydroxide minerals such as FeOOH have been a research focus in geology for studying the Earth's interior, and also in chemistry for studying their oxygen electrocatalysis activity. In this paper the first-principle evidence of a new class of ferroelectrics/multiferroics is given. In this class are: ß-CrOOH (guyanaite), ε-FeOOH, ß-GaOOH, and InOOH, which are earth-abundant minerals which have been experimentally verified to possess distorted rutile structures, are ferroelectric with considerable polarizations (up to 24 µC cm-2) and piezoelectric coefficients. Their atomic-thick layer may possess vertical polarization will not be diminished by depolarizing field because of the formation of O-HO bonds that can be hardly symmetrized. Furthermore, ß-CrOOH is revealed to be a combination of a high Curie temperature (TC) in-plane type-I multiferroics and vertical type-II multiferroics, which is strain tunable and may give a desirable coupling between magnetism and ferroelectricity. Supported by experimental evidence on reversible conversion between metal oxyhydroxides and dioxides and their good lattice match that gives convenient epitaxial growth, a heterostructure composed of oxyhydroxides and common metal dioxides (e.g., TiO2, SnO2 and CrO2) may be constructed for various applications such as ferroelectric field-effect transistors and multiferroic tunneling junctions.

First-Principles Study on the Thermoelectric Properties of FeAsS.

The electronic structure and thermoelectric properties of FeAsS are studied by the first-principles and the Boltzmann transport theory. The results show that FeAsS is a semiconductor with an indirect band gap of 0.73 eV. The dimensionless figure of merit (ZT) has obvious anisotropy, ZT value along the x- and y-directions is significantly larger than that along the z-direction, and p-type doping has better thermoelectric performance than n-type doping. The largest ZT value can reach 0.84, which is for p-type doping along the x-direction. The lattice thermal conductivity is extremely low, which is smaller than 1 W m-1 K-1. The results show that FeAsS is a promising candidate for thermoelectric applications.

How to realize a spin-dependent Seebeck diode effect in metallic zigzag γ-graphyne nanoribbons?

The spin-dependent Seebeck effect (SDSE) is one of the core topics of spin caloritronics. In the traditional device designs of spin-dependent Seebeck rectifiers and diodes, finite spin-dependent band gaps of materials are required to realize the on-off characteristic in thermal spin currents, and nearly zero charge current should be achieved to reduce energy dissipation. Here, we propose that two ferromagnetic zigzag γ-graphyne nanoribbons (ZγGNRs) without any spin-dependent band gaps around the Fermi level can not only exhibit the SDSE, but also display rectifier and diode effects in thermal spin currents characterized by threshold temperatures, which originates from the compensation effect occurring in spin-dependent transmissions but not from the spin-splitting band gaps in materials. The metallic characteristics of ZγGNRs bring about an advantage that the gate voltage is an effective route to adjust the symmetry of spin-splitting bands to obtain pure thermal spin currents. The results provide a new mechanism to realize spin-Seebeck rectifier and diode effects in 2D materials and expand material candidates towards spin-Seebeck device applications.

Edge-defect induced spin-dependent Seebeck effect and spin figure of merit in graphene nanoribbons.

By using the first-principle calculations combined with the non-equilibrium Green's function approach, we have studied spin caloritronic properties of graphene nanoribbons (GNRs) with different edge defects. The theoretical results show that the edge-defected GNRs with sawtooth shapes can exhibit spin-dependent currents with opposite flowing directions by applying temperature gradients, indicating the occurrence of the spin-dependent Seebeck effect (SDSE). The edge defects bring about two opposite effects on the thermal spin currents: the enhancement of the symmetry of thermal spin-dependent currents, which contributes to the realization of pure thermal spin currents, and the decreasing of the spin thermoelectric conversion efficiency of the devices. It is fortunate that applying a gate voltage is an efficient route to optimize these two opposite spin thermoelectric properties towards realistic device applications. Moreover, due to the existence of spin-splitting band gaps, the edge-defected GNRs can be designed as spin-dependent Seebeck diodes and rectifiers, indicating that the edge-defected GNRs are potential candidates for room-temperature spin caloritronic devices.

Multiple thermal spin transport performances of graphene nanoribbon heterojuction co-doped with Nitrogen and Boron.

Graphene nanoribbon is a popular material in spintronics owing to its unique electronic properties. Here, we propose a novel spin caloritronics device based on zigzag graphene nanoribbon (ZGNR), which is a heterojunction consisting of a pure single-hydrogen-terminated ZGNR and one doped with nitrogen and boron. Using the density functional theory combined with the non-equilibrium Green's function, we investigate the thermal spin transport properties of the heterojunction under different magnetic configurations only by a temperature gradient without an external gate or bias voltage. Our results indicate that thermally-induced spin polarized currents can be tuned by switching the magnetic configurations, resulting in a perfect thermal colossal magnetoresistance effect. The heterojunctions with different magnetic configurations exhibit a variety of excellent transport characteristics, including the spin-Seebeck effect, the spin-filtering effect, the temperature switching effect, the negative differential thermal resistance effect and the spin-Seebeck diode feature, which makes the heterojunction a promising candidate for high-efficiently multifunctional spin caloritronic applications.