Intrinsic valley polarization of magnetic VSe2 monolayers.

Intrinsic valley polarization can be obtained in VSe2 monolayers with broken inversion symmetry and time reversal symmetry. First-principles investigations reveal that the magnitude of the valley splitting in magnetic VSe2 induced by spin-orbit coupling reaches as high as 78.2 meV and can be linearly tuned by biaxial strain. Besides conventional polarized light, hole doping or illumination with light of proper frequency can offer effective routes to realize valley polarization. Moreover, spin-orbit coupling in monolayer VSe2 breaks not only the valley degeneracy but also the three-fold rotational symmetry in band structure. The intrinsic and tunable valley splitting and the breaking of optical isotropy bring additional benefits to valleytronic and optoelectronic applications.

All-Silicon Switchable Magnetoelectric Effect through Interlayer Exchange Coupling.

The magnetoelectric (ME) effect originating from the effective coupling between electric field and magnetism is an exciting frontier in nanoscale science such as magnetic tunneling junction (MTJ), ferroelectric/piezoelectric heterojunctions etc. The realization of switchable ME effect under external electric field in d0 semiconducting materials of single composition is needed especially for all-silicon spintronics applications because of its natural compatibility with current industry. We employ density functional theory (DFT) to reveal that the pristine Si(111)-3×3 R30° (Si3 hereafter) reconstructed surfaces of thin films with a thickness smaller than eleven bilayers support a sizeable linear ME effect with switchable direction of magnetic moment under external electric field. This is achieved through the interlayer exchange coupling effect in the antiferromagnetic regime, where the spin-up and spin-down magnetized density is located on opposite surfaces of Si3 thin films. The obtained coefficient for the linear ME effect can be four times larger than that of ferromagnetic Fe films, which fail to have the reversal switching capabilities. The larger ME effect originates from the spin-dependent screening of the spin-polarized Dirac fermion. The prediction will promote the realization of well-controlled and switchable data storage in all-silicon electronics.

Nonlinear Rashba spin splitting in transition metal dichalcogenide monolayers.

Single-layer transition-metal dichalcogenides (TMDs) such as MoS2 and MoSe2 exhibit unique electronic band structures ideal for hosting many exotic spin-orbital orderings. It has been widely accepted that Rashba spin splitting (RSS) is linearly proportional to the external field in heterostructure interfaces or to the potential gradient in polar materials. Surprisingly, an extraordinary nonlinear dependence of RSS is found in semiconducting TMD monolayers under a gate field. In contrast to small and constant RSS in polar materials, the potential gradient in non-polar TMDs gradually increases with the gate bias, resulting in nonlinear RSS with a Rashba coefficient an order-of-magnitude larger than the linear one. Most strikingly, under a large gate field MoSe2 demonstrates the largest anisotropic spin splitting among all known semiconductors to our knowledge. Based on the k·p model via symmetry analysis, we identify that the third-order contributions are responsible for the large nonlinear Rashba splitting. The gate tunable spin splitting found in semiconducting pristine TMD monolayers promises future spintronics applications in that spin polarized electrons can be generated by external gating in an experimentally accessible way.