Ultrafast and Broad-Band Graphene Heterojunction Photodetectors with High Gain.

Graphene possesses an exotic band structure that spans a wide range of important technological wavelength regimes for photodetection, all within a single material. Conventional methods aimed at enhancing detection efficiency often suffer from an extended response time when the light is switched off. The task of achieving ultrafast broad-band photodetection with a high gain remains challenging. Here, we propose a devised architecture that combines graphene with a photosensitizer composed of an alternating strip superstructure of WS2-WSe2. Upon illumination, n+-WS2 and p+-WSe2 strips create alternating electron- and hole-conduction channels in graphene, effectively overcoming the tradeoff between the responsivity and switch time. This configuration allows for achieving a responsivity of 1.7 × 107 mA/W, with an extrinsic response time of 3-4 µs. The inclusion of the superstructure booster enables photodetection across a wide range from the near-ultraviolet to mid-infrared regime and offers a distinctive photogating route for high responsivity and fast temporal response in the pursuit of broad-band detection.

Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS2 Sputtered Few-Layered Thin Films.

Defect engineering is of great interest to the two-dimensional (2D) materials community. If nonmagnetic transition-metal dichalcogenides can possess room-temperature ferromagnetism (RTFM) induced by defects, then they will be ideal for application as spintronic materials and also for studying the relation between electronic and magnetic properties of quantum-confined structures. Thus, in this work, we aimed to study gamma-ray irradiation effects on MoS2, which is diamagnetic in nature. We found that gamma-ray exposure up to 9 kGy on few-layered (3.5 nm) MoS2 films induces an ultrahigh saturation magnetization of around 610 emu/cm3 at RT, whereas no significant changes were observed in the structure and magnetism of bulk MoS2 (40 nm) films even after gamma-ray irradiation. The RTFM in a few-layered gamma-ray irradiated sample is most likely due to the bound magnetic polaron created by the spin interaction of Mo 4d ions with trapped electrons present at sulfur vacancies. In addition, density functional theory (DFT) calculations suggest that the defect containing one Mo and two S vacancies is the dominant defect inducing the RTFM in MoS2. These DFT results are consistent with Raman, X-ray photoelectron spectroscopy, and ESR spectroscopy results, and they confirm the breakage of Mo and S bonds and the existence of vacancies after gamma-ray irradiation. Overall, this study suggests that the occurrence of magnetism in gamma-ray irradiated MoS2 few-layered films could be attributed to the synergistic effects of magnetic moments arising from the existence of both Mo and S vacancies as well as lattice distortion of the MoS2 structure.

Precise Sn-Doping Modulation for Optimizing CdWO4 Nanorod Photoluminescence.

The cadmium tungstate rods have been given much attention due to their potential for usage in numerous luminescent applications. We have prepared single crystalline Sn-doped Cd1-xSnxWO4 (where x = 0, 1, 3, and 5%) nanorods (NRDs) and characterized them using refined X-ray diffraction and TEM analysis, revealing a monoclinic phase and a crystallite size that decreased from 62 to 38 nm as Sn concentration increased. Precise Sn doping modulation in CdWO4 NRDs causes surface recombination of electrons and holes, which causes the PL intensity to decrease as the Sn content rises. The chromaticity diagram shows that an increase in the Sn content caused a change in the emission color from sky blue to light green, which was attributed to the increased defect density. The photoluminescence time decay curve of all samples fit well with double-order exponential decay, and the average decay lifetime was found to be 1.11, 0.93, and 1.16 ns for Cd1-xSnxWO4, x = 0, 1, and 5%, respectively. This work provides an understanding of the behavior of Sn-doped CdWO4 NRDs during electron transitions and the physical nature of emission that could be used in bio-imaging, light sources, displays, and other applications.

Structural and Superconducting Proximity Effect of SnPb Bimetallic Nanoalloys.

We report the superconducting properties between a conventional strong-coupled Pb and weak-coupled Sn superconductor. A series of SnrPb1-r nanoalloys with various compositions r were synthesized, and their superconducting properties were measured using superconducting quantum interference devices (SQUIDs) magnetometer. Our results reveal a superconducting proximity effect (SPE) between immiscible Sn and Pb granules in the range of r = 0.2~0.9, as a weak superconducting coupling can be established with the coexistence of phonon hardening and increased Ginzburg-Landau coherence length. Furthermore, our results provide new insights into improving the study of the superconducting proximity effect introduced by Sn doping.

One-pot hydrothermal preparation and defect-enhanced photocatalytic activity of Bi-doped CdWO4 nanostructures.

In the field of photocatalysis, the suppression of electron-hole recombination through various defects has been an emerging trend to enhance photocatalytic activity. The separation efficiency of electron-hole recombination of well-explored wolframite structured monoclinic CdWO4, prepared using the one-pot hydrothermal method, was further improved by Bi3+ doping in CdWO4. Studies using the partial density of states illustrated that Bi 6s and 6p orbitals altered the electronic band structure to the extent of lowering the band gap, resulting in more photon absorption. The positron annihilation lifetime studies unveiled the formation of cluster defects such as oxygen (V0o, Vo1+, Vo2+) along with cadmium vacancies () in Bi-doped CdWO4. The coexistence and synergy of more adsorption sites of V0o, Vo1+, Vo2+, VCd for dye and O2 molecules, suitable oxide/redox band potentials, the modified electronic band structure especially owing to W-O1-Bi-O2-W linkages, together with high surface area endowed Bi-doped CdWO4 to form ˙O2- radicals played a predominant role in the methyl orange degradation. All the experimental findings demonstrated conclusively that Bi3+ doping at Cd2+ facilitated CdWO4 to exhibit superior photocatalytic activity.

WSe2/WS2 Heterobilayer Nonvolatile Memory Device with Boosted Charge Retention.

A two-dimensional (2D) nonvolatile memory device architecture to improve the long-term charge retention with the minimum charge loss without compromising storage capacity and the extinction ratio for practical applications has been an imminent demand. To address the current issue, we adopted a novel type-II band-aligned heterobilayer channel comprising vertically stacked monolayer WSe2 nanodots on monolayer WS2. The band offset modulation leads to electron doping from WSe2 nanodots into the WS2 channel without any external driving electric field. As a result, the tested device outperformed with a memory window as high as 34 V and a negligible charge loss of 7% in a retention period of 10 years while maintaining a high extinction ratio of 106. The doping technique presented in this work provides a feasible route to modulate the electrical properties of 2D channel materials without hampering charge transport, paving the way for high-performance 2D memory devices.

Room Temperature Magnetic Memory Effect in Nanodiamond/γ-Fe2O3 Composites.

We report a room temperature magnetic memory effect (RT-MME) from magnetic nanodiamond (MND) (ND)/γ-Fe2O3 nanocomposites. The detailed crystal structural analysis of the diluted MND was performed by synchrotron radiation X-ray diffraction, revealing the composite nature of MND having 99 and 1% weight fraction ND and γ-Fe2O3 phases, respectively. The magnetic measurements carried out using a DC SQUID magnetometer show the non-interacting superparamagnetic nature of γ-Fe2O3 nanoparticles in MND have a wide distribution in the blocking temperature. Using different temperature, field, and time relaxation protocols, the memory phenomenon in the DC magnetization has been observed at room temperature (RT). These findings suggest that the dynamics of MND are governed by a wide distribution of particle relaxation times, which arise from the distribution of γ-Fe2O3 nanoparticle size. The observed RT ferromagnetism coupled with MME in MND will find potential applications in ND-based spintronics.

Phase transformation and room temperature stabilization of various Bi2O3 nano-polymorphs: effect of oxygen-vacancy defects and reduced surface energy due to adsorbed carbon species.

We report the grain growth from the nanoscale to microscale and a transformation sequence from Bi →ß-Bi2O3→γ-Bi2O3→α-Bi2O3 with the increase of annealing temperature. The room temperature (RT) stabilization of ß-Bi2O3 nanoparticles (NPs) was attributed to the effect of reduced surface energy due to adsorbed carbon species, and oxygen vacancy defects may have played a significant role in the RT stabilization of γ-Bi2O3 NPs. An enhanced red emission band was evident from all the samples attributed to oxygen-vacancy defects formed during the growth process in contrast with the observed white emission band from the air annealed Bi ingots. Based on our experimental findings, the air annealing induced oxidation of Bi NPs and transformation mechanism within various Bi2O3 nano-polymorphs are presented. The outcome of this study suggests that oxygen vacancy defects at the nanoscale play a significant role in both structural stabilization and phase transformation within various Bi2O3 nano-polymorphs, which is significant from theoretical consideration.

Room Temperature Magnetic Memory Effect in Cluster-Glassy Fe-doped NiO Nanoparticles.

The Fe-doped NiO nanoparticles that were synthesized using a co-precipitation method are characterized by enhanced room-temperature ferromagnetic property evident from magnetic measurements. Neutron powder diffraction experiments suggested an increment of the magnetic moment of 3d ions in the nanoparticles as a function of Fe-concentration. The temperature, time, and field-dependent magnetization measurements show that the effect of Fe-doping in NiO has enhanced the intraparticle interactions due to formed defect clusters. The intraparticle interactions are proposed to bring additional magnetic anisotropy energy barriers that affect the overall magnetic moment relaxation process and emerging as room temperature magnetic memory. The outcome of this study is attractive for the future development of the room temperature ferromagnetic oxide system to facilitate the integration of spintronic devices and understanding of their fundamental physics.

Structural and Enhanced Optical Properties of Stabilized γ‒Bi2O3 Nanoparticles: Effect of Oxygen Ion Vacancies.

We report the synthesis of room temperature (RT) stabilized γ-Bi2O3 nanoparticles (NPs) at the expense of metallic Bi NPs through annealing in an ambient atmosphere. RT stability of the metastable γ-Bi2O3 NPs is confirmed using synchrotron radiation powder X-ray diffraction and Raman spectroscopy. γ-Bi2O3 NPs exhibited a strong red-band emission peaking at ~701 nm, covering 81% integrated intensity of photoluminescence spectra. Our findings suggest that the RT stabilization and enhanced red-band emission of γ‒Bi2O3 is mediated by excess oxygen ion vacancies generated at the octahedral O(2) sites during the annealing process.

Role of cobalt cations in short range antiferromagnetic Co3O4 nanoparticles: a thermal treatment approach to affecting phonon and magnetic properties.

We report the phonon and magnetic properties of various well-stabilized Co3O4 nanoparticles. The net valence in cobalt (II)/(III) cation can be obtained by subtracting the Co2+ ions in tetrahedral interstices and Co3+ ions in the octahedral interstices, respectively, which will possess spatial inhomogeneity of its magnetic moment via Co2+ in tetrahedra and Co3+ in octahedral configurations in the normal spinel structure. Furthermore, the distribution of Co2+/Co3+ governed by various external (magnetic field and temperature) and internal (particle size and slightly distorted CoO6 octahedra) sources, have led to phenomena such as a large redshift of phonon-phonon interaction and short-range magnetic correlation in the inverse spinel structure. The outcome of our study is important in terms of the future development of magnetic semiconductor spintronic devices of Co3O4.

Strong Deep-Level-Emission Photoluminescence in NiO Nanoparticles.

Nickel oxide is one of the highly promising semiconducting materials, but its large band gap (3.7 to 4 eV) limits its use in practical applications. Here we report the effect of nickel/oxygen vacancies and interstitial defects on the near-band-edge (NBE) and deep-level-emission (DLE) in various sizes of nickel oxide (NiO) nanoparticles. The ultraviolet (UV) emission originated from excitonic recombination corresponding near-band-edge (NBE) transition of NiO, while deep-level-emission (DLE) in the visible region due to various structural defects such as oxygen vacancies and interstitial defects. We found that the NiO nanoparticles exhibit a strong green band emission around ~2.37 eV in all samples, covering 80% integrated intensity of PL spectra. This apparently anomalous phenomenon is attributed to photogenerated holes trapped in the deep level oxygen vacancy recombining with the electrons trapped in a shallow level located just below the conducting band.

Routes to probe Bismuth induced strong-coupling superconductivity in bimetallic BiIn alloys.

We report the observation of strong electron-phonon coupling in intergranular linked BiIn superconductors over an infinite range mediated by low-lying phonons. An enhanced superconducting transition temperature was observed from the magnetization, revealing a main diamagnetic Meissner state below TC(0) = 5.86(1) K and a critical field HC(0) = 1355(15) Oe with an In2Bi phase of the composite sample. The electron-phonon coupling to low lying phonons is found to be the leading mechanism for observed strong-coupling superconductivity in the BiIn system. Our findings suggest that In2Bi is in the strong-coupling region with TC(0) = 5.62(1) K, λep = 1.45, ωln = 45.92 K and α = 2.23. The estimated upper critical field can be well-described by a power law with α value higher than 2, consistent with the strong electron-phonon coupling.

Magnetic resonance study of exchange-biased Ni/NiO nanoparticles.

Finite sized Ni/NiO nanoparticles (NPs) are prepared by oxidizing pure Ni-NPs in an ambient atmosphere with varying annealing time (t A). A synchrotron radiation x-ray diffraction technique was used to estimate the grain size, weight fraction and lattice parameters of Ni and NiO. The temperature (T) dependencies of effective g-factor and line-width of ferromagnetic resonance (FMR) spectra for a series of Ni/NiO NPs are determined. Three T-regions with different FMR behaviors T > 200 K, 200 > T > 130 K and T < 130 K are identified. In particular, for T < 200 K, the T-dependency of the g-factor reveals an evolution of exchange coupling between Ni and NiO due to the gradual oxidation of Ni NPs.

Magnetocrystalline two-fold symmetry in CaFe2O4 single crystal.

Understanding of magnetocrystalline anisotropy in CaFe2O4 is a matter of importance for its future applications. A high quality single crystal CaFe2O4 sample is studied by using synchrotron x-ray diffraction, a magnetometer and the electron spin resonance (ESR) technique. A broad feature of the susceptibility curve around room temperature is observed, indicating the development of 1D spin interactions above the on-set of antiferromagnetic transition. The angular dependency of ESR reveals an in-plane two-fold symmetry, suggesting a strong correlation between the room temperature spin structure and magnetocrystalline anisotropy. This finding opens an opportunity for the device utilizing the anisotropy field of CaFe2O4.

Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles.

After a decade of effort, a large number of magnetic memory nanoparticles with different sizes and core/shell compositions have been developed. While the field-cooling memory effect is often attributed to particle size and distribution effects, other magnetic coupling parameters such as inter- and intra-coupling strength, exchange bias, interfacial pinned spins, and the crystallinity of the nanoparticles also have a significant influence on magnetization properties and mechanisms. In this study, we used the analysis of static- and dynamic-magnetization measurements to investigate NiO nanoparticles with different sizes and discussed how these field-cooling strengths affect their memory properties. We conclude that the observed field-cooling memory effect from bare, small size NiO nanoparticles arises because of the unidirectional anisotropy which is mediated by the interfacial strongly pinned spins.