Hydrogen-Enhanced Vacancy Diffusion in Metals.

Vacancy diffusion is fundamental to materials science. Hydrogen atoms bind strongly to vacancies and are often believed to retard vacancy diffusion. Here, we use a potential-of-mean-force method to study the diffusion of vacancies in Cu and Pd. We find H atoms, instead of dragging, enhance the diffusivity of vacancies due to a positive hydrogen Gibbs excess at the saddle-point: that is, the migration saddle attracts more H than the vacancy ground state, characterized by an activation excess ΓHm ≈ 1 H, together with also-positive migration activation volume Ωm and activation entropy Sm. Thus, according to the Gibbs adsorption isotherm generalized to the activation path, a higher µH significantly lowers the migration free-energy barrier. This is verified by ab initio grand canonical Monte Carlo simulations and direct molecular dynamics simulations. This trend is believed to be generic for migrating dislocations, grain boundaries, and so on that also have a higher capacity for attracting H atoms due to a positive activation volume at the migration saddles.

Moiré Potential, Lattice Corrugation, and Band Gap Spatial Variation in a Twist-Free MoTe2/MoS2 Heterobilayer.

To have a fully first-principles description of the moiré pattern in transition-metal dichalcogenide heterobilayers, we have carried out density functional theory calculations on a MoTe2(9 × 9)/MoS2(10 × 10) stacking, which has a superlattice larger than an exciton yet not large enough to justify a continuum model treatment. Lattice corrugation is found to be significant in both monolayers, yet its effect on the electronic properties is marginal. We reveal that the variation of the average local potential near Mo atoms in both MoTe2 and MoS2 layers displays a conspicuous moiré pattern. They are the intralayer moiré potentials correlating closely with the spatial variation of the valence band maximum and conduction band minimum. The interlayer moiré potential, defined as the difference between the two intralayer moiré potentials, changes roughly in proportion to the band gap variation in the moiré cell. This finding might be instructive in chemical engineering of van der Waals bilayers.

Role of Interlayer Coupling on the Evolution of Band Edges in Few-Layer Phosphorene.

Using first-principles calculations, we have investigated the evolution of band edges in few-layer phosphorene as a function of the number of P layers. Our results predict that monolayer phosphorene is an indirect band gap semiconductor and its valence band edge is extremely sensitive to strain. Its band gap could undergo an indirect-to-direct transition under a lattice expansion as small as 1% along the zigzag direction. A semiempirical interlayer coupling model is proposed, which can reproduce the evolution of valence band edges obtained by first-principles calculations well. We conclude that the interlayer coupling plays a dominant role in the evolution of the band edges via decreasing both band gap and carrier effective masses with the increase of phosphorene thickness. Scrutiny of the orbital-decomposed band structure provides a better understanding of the upward shift of the valence band maximum, surpassing that of the conduction band minimum.

Helium bubble nucleation and growth in α-Fe: insights from first-principles simulations.

We have carried out a first-principles study on the nucleation and early-stage growth of He bubbles in Fe. The energetics, atomic and electronic structure of He-vacancy complexes, involving both a monovacancy and a nine-vacancy cluster, are examined. Based on the energetics, we then perform thermodynamics analysis to gain deeper insights into He bubble nucleation and growth. We have determined the energy cost for the nucleation of He bubbles and found that up to eight He atoms can be trapped at a single vacancy. In order to capture more He atoms, the vacancy has to emit Frenkel pairs to release the substantial stress building on the surrounding Fe lattice. Compared to the monovacancy, the nine-vacancy cluster has a lower energy cost for He bubble nucleation and growth. He atoms at the vacancy repel the surrounding electronic charge and redistribute it on the neighboring Fe atoms. The thermodynamic analysis reveals that He chemical potential provides a driving force for He bubble nucleation and growth. There are two critical He chemical potentials that are of particular importance: one of them marks the transition from single He occupation to multiple He occupation at a monovacancy while the other sets off He-induced superabundant vacancy formation.

Understanding Cr segregation at the He bubble surface in Fe.

Although Cr segregation at the free Fe surface is weak, noticeable segregation of Cr at the He bubble surface in Fe has recently been observed. To understand the driving force for Cr segregation, we have carried out first-principles density functional theory calculations on the energetics of solute Cr atoms at the He bubble surface, which was modeled by a Fe/He interface. We find that both the compressive stress produced by the He bubble and the direct interfacial interaction promote Cr segregation from inside the bulk to the bubble surface, along with reduced spin polarization. Electronic structure analyses show that at the Fe/He interface, Cr is more compressible than Fe due to having more empty e(g) orbitals and, accordingly, the Fe surface gets energetically more favorable for Cr than in the bulk. On the other hand, the segregation of Cr increases the charge density at the bubble surface, and thus hinders assimilation of further He atoms.

Magnetic properties of Cu(m)O(n) clusters: a first principles study.

Experimental evidence shows that small Cu(2)O nanoparticles exhibit ferromagnetic or paramagnetic properties, allowing for the promising possibility to recycle the catalyst Cu(2)O easily in wastewater treatment. In this paper, theoretical calculation studying the magnetic property of copper/oxide clusters is reported. A series of Cu(m)O(n) ((m, n) = (4, 1); (4, 2); (4, 5); (16, 15); (28, 15); (44, 15); (28, 27)) clusters were investigated using generalized gradient approximation (GGA) and the Hubbard U (GGA+U) method within density functional theory (DFT). It is found that the electronic structures of bulk Cu(2)O calculated by the GGA and GGA+U are similar. The structures of Cu(m)O(n) ((m, n) = (4, 1); (4, 2); (4, 5)) are all planar. For the bulk-product Cu(m)O(n) ((m, n) = (16, 15); (28, 15); (44, 15); (28, 27)), O atoms prefer to be the outermost atoms. We classified two types of clusters on the basis of their O to Cu atomic ratios. One is O-rich clusters, i.e., Cu(4)O(5), Cu(16)O(15), and Cu(28)O(27). The other is O-poor clusters, i.e., Cu(4)O, Cu(4)O(2), Cu(28)O(15), and Cu(44)O(15). The calculation results show that the O-rich clusters have longer average Cu-Cu bonds and larger binding energy than those of the O-poor ones. More interestingly, the former are magnetic and give ferromagnetic ordering while the latter are nonmagnetic. The hydrogenation of O-terminated clusters can improve its stability but suppress its magnetism. The study may be extremely useful for the potential applications of Cu(2)O nanoparticles in the catalysis and semiconductor fields.

Electron transport in a pi-stacking molecular chain.

We have investigated the electronic structure and transport properties of a pi-stacking molecular chain which is covalently bonded to a H/Si(100) surface, using the first-principles density functional theory approach combined with Green's function method. The highest occupied molecular orbital (HOMO) dispersion is remarkably reduced, but remains noticeable ( approximately 0.1 eV), when a short pi-stacking styrene wire is cut from an infinitely long wire and sandwiched between metal electrodes. We find that the styrene chain's HOMO and lowest unoccupied molecular orbital (LUMO) states are not separated from Si, indicating that it does not work as a wire. By substituting -NO2 or -NH2 for the top -H of styrene, we are able to shift the position of the HOMO and LUMO with respect to the Fermi level. More importantly, we find that the HOMO of styrene-NH2 falls into the band gap of the substrate and is localized in the pi-stacking chain, which is what we need for a wire to be electrically separated from the substrate. The conductance of such an assembly is comparable to that of Au/benzene dithiolate/Au wire based on chemical bonding, and its tunability makes it a promising system for a molecular device.

Theoretical investigation on electron transport through an organic molecule: effect of the contact structure.

Knowing how the contact geometry influences the conductance of a molecular wire junction requires both a precise determination of the molecule/metallic-electrode interface structure and an evaluation of the conductance for different contact geometries with a fair accuracy. With a greatly improved method to solve the Lippmann-Schwinger equation, we are able to include at least one atomic layer of each electrode into the extended molecule. The artificial effect of the jellium model used for the electrodes is therefore significantly reduced. Our first-principles calculations on the transport properties of a single benzene dithiolate molecule sandwiched between Au(111) surfaces show that the transmission of the bridge site contact, which is the most stable adsorption configuration in equilibrium, displays different features from those of other configurations, and that the inclusion of the surface layers of Au electrodes into the extended molecule shifts and broadens the transmission peaks due to a stronger and more realistic S-Au bonding. We discuss the geometry dependence of the transport properties by analyzing the density of states of the molecular orbitals.