Erratum: Roadmap for phase change materials in photonics and beyond.

[This corrects the article DOI: 10.1016/j.isci.2023.107946.].

Roadmap for phase change materials in photonics and beyond.

Phase Change Materials (PCMs) have demonstrated tremendous potential as a platform for achieving diverse functionalities in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum, ranging from terahertz to visible frequencies. This comprehensive roadmap reviews the material and device aspects of PCMs, and their diverse applications in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum. It discusses various device configurations and optimization techniques, including deep learning-based metasurface design. The integration of PCMs with Photonic Integrated Circuits and advanced electric-driven PCMs are explored. PCMs hold great promise for multifunctional device development, including applications in non-volatile memory, optical data storage, photonics, energy harvesting, biomedical technology, neuromorphic computing, thermal management, and flexible electronics.

Color Tunable, Lithography-Free Refractory Metal-Oxide Metacoatings with a Graded Refractive Index Profile.

The refractory metal-oxide semiconductors are an overlooked platform for nanophononics that offer alloys with high melting points and tunable optical constants through stoichiometry changes and ion intercalation. We show that these semiconductors can form metamaterial coatings (metacoatings) made from a set of highly subwavelength, periodic metal-oxide layers (≤20 nm) with a varying and graded refractive index profile that includes a combination of high and low refractive indices and plasmonic layers. These metacoatings exhibit vibrant, structural color arising from the periodic index profile that can be tuned across the visible spectrum, over ultralarge lateral areas through bottom-up thermal annealing techniques.

Stoichiometric Engineering of Chalcogenide Semiconductor Alloys for Nanophotonic Applications.

A variety of alternative plasmonic and dielectric material platforms-among them nitrides, semiconductors, and conductive oxides-have come to prominence in recent years as means to address the shortcomings of noble metals (including Joule losses, cost, and passive character) in certain nanophotonic and optical-frequency metamaterial applications. Here, it is shown that chalcogenide semiconductor alloys offer a uniquely broad pallet of optical properties, complementary to those of existing material platforms, which can be controlled by stoichiometric design. Using combinatorial high-throughput techniques, the extraordinary epsilon-near-zero, plasmonic, and low/high-index characteristics of Bi:Sb:Te alloys are explored. Depending upon composition they can, for example, have plasmonic figures of merit higher than conductive oxides and nitrides across the entire UV-NIR range, and higher than gold below 550 nm; present dielectric figures of merit better than conductive oxides at near-infrared telecommunications wavelengths; and exhibit record-breaking refractive indices as low as 0.7 and as high as 11.5.

Reconfigurable Ultraviolet and High-Energy Visible Dielectric Metamaterials.

Photonic materials with tunable and switchable ultraviolet (UV) to high-energy visible (HEV) optical properties may benefit applications such as sensing, high-density optical memory, beam-steering, adaptive optics, and light modulation. Here, for the first time we demonstrate a nonvolatile switchable dielectric metamaterial operating in the UV-HEV spectral range. Nanograting metamaterials in a layered composite of low-loss ZnS/SiO2 and the chalcogenide phase-change medium germanium-antimony-telluride (Ge2Sb2Te5 or GST) exhibit reflection resonances at UV-HEV wavelengths that are substantially modified by light-induced (amorphous-crystalline) phase transitions in the chalcogenide layer. Despite the presence of the lossy GST, resonance quality factors up to Q ∼ 15 are ensured by the transparency (low losses) of ZnS/SiO2 in the UV-HEV spectral range and values of Q increase as the refractive index of Ge2Sb2Te5 decreases, upon crystallization. Notably, however, this switching leaves resonance spectral positions unchanged.

Giant Electro-Optical Effect through Electrostriction in a Nanomechanical Metamaterial.

Electrostriction is a property of all naturally occurring dielectrics whereby they are mechanically deformed under the application of an electric field. It is demonstrated here that an artificial metamaterial nanostructure comprising arrays of dielectric nanowires, made of silicon and indium tin oxide, is reversibly structurally deformed under the application of an electric field, and that this reconfiguration is accompanied by substantial changes in optical transmission and reflection, thus providing a strong electro-optic effect. Such metamaterials can be used as the functional elements of electro-optic modulators in the visible to near-infrared part of the spectrum. A modulator operating at 1550 nm with effective electrostriction and electro-optic coefficients of order 10-13 m2 V-2 and 10-6 m V-1 , respectively, is demonstrated. Transmission changes of up to 3.5% are obtained with a 500 mV control signal at a modulation frequency of ≈6.5 MHz. With a resonant optical response that can be spectrally tuned by design, modulators based on the artificial electrostrictive effect may be used for laser Q-switching and mode-locking among other applications that require modulation at megahertz frequencies.

Compositionally controlled plasmonics in amorphous semiconductor metasurfaces.

Amorphous bismuth telluride (Bi:Te) provides a composition-dependent, CMOS-compatible alternative material platform for plasmonics in the ultraviolet-visible spectral range. Thin films of the chalcogenide semiconductor are found, using high-throughput physical vapor deposition and characterization techniques, to exhibit a plasmonic response (a negative value of the real part of relative permittivity) over a band of wavelengths extending from ~250 nm to between 530 and 978 nm, depending on alloy composition (Bi:Te at% ratio). The plasmonic response is illustrated via the fabrication of subwavelength period nano-grating metasurfaces, which present strong, period-dependent plasmonic absorption resonances in the visible range, manifested in the perceived color of the nanostructured domains in reflection.

Organometallic Perovskite Metasurfaces.

Organometallic perovskites, solution-processable materials with outstanding optoelectronic properties and high index of refraction, provide a platform for all-dielectric metamaterials operating at visible frequencies. Perovskite metasurfaces with structural coloring tunable across visible frequencies are realized through subwavelength structuring. Moreover, a threefold increase of the luminescence yield and comparable reduction of luminescence decay time are observed.

Lithography Assisted Fiber-Drawing Nanomanufacturing.

We present a high-throughput and scalable technique for the production of metal nanowires embedded in glass fibres by taking advantage of thin film properties and patterning techniques commonly used in planar microfabrication. This hybrid process enables the fabrication of single nanowires and nanowire arrays encased in a preform material within a single fibre draw, providing an alternative to costly and time-consuming iterative fibre drawing. This method allows the combination of materials with different thermal properties to create functional optoelectronic nanostructures. As a proof of principle of the potential of this technique, centimetre long gold nanowires (bulk Tm = 1064 °C) embedded in silicate glass fibres (Tg = 567 °C) were drawn in a single step with high aspect ratios (>104); such nanowires can be released from the glass matrix and show relatively high electrical conductivity. Overall, this fabrication method could enable mass manufacturing of metallic nanowires for plasmonics and nonlinear optics applications, as well as the integration of functional multimaterial structures for completely fiberised optoelectronic devices.

A Switchable Mid-Infrared Plasmonic Perfect Absorber with Multispectral Thermal Imaging Capability.

A switchable perfect absorber with multispectral thermal imaging capability is presented. Aluminum nanoantenna arrays above a germanium antimony telluride (GST) spacer layer and aluminum mirror provide efficient wavelength-tunable absorption in the mid-infrared. Utilizing the amorphous-to-crystalline phase transition in GST, this device offers switchable absorption with strong reflectance contrast at resonance and large phase-change-induced spectral shifts.

Photo-induced optical activity in phase-change memory materials.

We demonstrate that optical activity in amorphous isotropic thin films of pure Ge2Sb2Te5 and N-doped Ge2Sb2Te5N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by circular dichroism measurements. This opens up the possibility of controlled induction of optical activity at the nanosecond time scale for exploitation in a new generation of high-density optical memory, fast chiroptical switches and chiral metamaterials.

n-type chalcogenides by ion implantation.

Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (~5-11 at.%), incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature.

Nano-scale MoS2 thin films are successfully deposited on a variety of substrates by atmospheric pressure chemical vapor deposition (APCVD) at ambient temperature, followed by a two-step annealing process. These annealed MoS2 thin films are characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), micro-Raman, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-VIS-NIR spectrometry, photoluminescence (PL) and Hall Effect measurement. Key optical and electronic properties of APCVD grown MoS2 thin films are determined. This APCVD process is scalable and can be easily incorporated with conventional lithography as the deposition is taking place at room temperature. We also find that the substrate material plays a significant role in the crystalline structure formation during the annealing process and single crystalline MoS2 thin films can be achieved by using both c-plane ZnO and c-plane sapphire substrates. These APCVD grown nano-scale MoS2 thin films show great promise for nanoelectronic and optoelectronic applications.

On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glasses.

Reaction order in Bi-doped oxide glasses depends on the optical basicity of the glass host. Red and NIR photoluminescence (PL) bands result from Bi(2+) and Bin clusters, respectively. Very similar centers are present in Bi- and Pb-doped oxide and chalcogenide glasses. Bi-implanted and Bi melt-doped chalcogenide glasses display new PL bands, indicating that new Bi centers are formed. Bi-related PL bands have been observed in glasses with very similar compositions to those in which carrier-type reversal has been observed, indicating that these phenomena are related to the same Bi centers, which we suggest are interstitial Bi(2+) and Bi clusters.

An all-optical, non-volatile, bidirectional, phase-change meta-switch.

Non-volatile, bidirectional, all-optical switching in a phase-change metamaterial delivers high-contrast transmission and reflection modulation at near- to mid-infrared wavelengths in device structures down to ≈1/27 of a wavelength thick.