RESUMO
We report the magnetic structure and properties of a thiocyanate-based honeycomb magnet [Na(OH2)3]Mn(NCS)3 which crystallises in the unusual low-symmetry trigonal space group P3Ì. Magnetic measurements on powder samples show this material is an antiferromagnet (ordering temperature TN,mag = 18.1(6) K) and can be described by nearest neighbour antiferromagnetic interactions J = -11.07(4) K. A method for growing neutron-diffraction sized single crystals (>10 mm3) is demonstrated. Low temperature neutron single crystal diffraction shows that the compound adopts the collinear antiferromagnetic structure with TN,neut = 18.94(7) K, magnetic space group P3Ì'. Low temperature second-harmonic generation (SHG) measurements provide no evidence of breaking of the centre of symmetry.
RESUMO
We present measurements of the coherence times of excited states of hydrogen-like arsenic impurities in germanium (Ge:As) using a table-top two-dimensional time-domain spectroscopy (2D-TDS) system. We show that this laboratory system is capable of resolving the coherence lifetimes of atomic-like excited levels of impurity centers in semiconductors, such as those used in solid-state quantum information technologies, on a subpicosecond time scale. By fitting the coherent nonlinear response of the system with the known intracenter transition frequencies, we are able to monitor coherent population transfer and decay of the transitions from the 2p0 and 2p± states for different low excitation pulse fields. Furthermore, by examining the off-diagonal resonances in the 2D frequency-domain map, we are able to identify coherences between excited electronic states that are not visible via conventional single-frequency pump-probe or Hahn-echo measurements.
RESUMO
We report on the design, fabrication and characterisation of large-area photoconductive THz array structures, consisting of a thin LT-GaAs active region transferred to an insulating substrate using a wafer-scale bonding process. The electrically insulating, transparent substrate reduces the parasitic currents in the devices, allowing peak THz-fields as high as 120 kV cm-1 to be generated over a bandwidth >5 THz. These results are achieved using lower pulse energies than demanded by conventional photoconductive arrays and other popular methods of generating high-field THz radiation. Two device sizes are fully characterised and the emission properties are compared to generation by optical rectification in ZnTe. The device can be operated in an optically saturated regime in order to suppress laser noise.
