Draining vein shielding in intracranial arteriovenous malformations during gamma-knife: a new way of preventing post gamma-knife edema and hemorrhage.

BACKGROUND: Following gamma knife (GK) therapy for intracranial arteriovenous malformations (AVMs), obliteration of the nidus occurs over several years. During this period, complications like rebleeding have been attributed to early draining vein occlusion. OBJECTIVE: To evaluate if shielding the draining vein(s) during GK therapy prevents early draining vein obliteration and complications following GK therapy. METHODS: This was a nonrandomized case-control study over 5 years (January 2009-February 2014) and included patients with intracranial AVM who underwent GK therapy at our center. All patients who underwent draining vein shielding by the senior author (D.A.) were included in the test group, and patients who did not undergo draining vein shielding were put in the control group. Patients were followed up for at least 6 months (and every 6 months thereafter) clinically as well as radiologically with computed tomography head scans/magnetic resonance imaging brain scans to check for postradiosurgery imaging (PRI) changes. RESULTS: One hundred eighty-five patients were included in this study, of which 96 were in the control group and 89 were in the test group. Both groups were well matched in demographics, comorbidities, adjuvant treatment, angioarchitecture, and radiation dosing. Because of shielding, the test group patients received significantly less radiation to the draining vein than the control group (P = .001). On follow-up, a significantly lower number of patients in the test group had new neurological deficits (P = .001), intracranial hemorrhage (P = .03), and PRI changes (P = .002). CONCLUSION: Shielding of the draining vein is a potent new strategy in minimizing PRI and hemorrhage as well as clinical deterioration following GK therapy for intracranial AVMs.

Characterization of responses and comparison of calibration factor for commercial MOSFET detectors.

A commercial metal oxide silicon field effect transistor (MOSFET) dosimeter of model TN502-RD has been characterized for its linearity, reproducibility, field size dependency, dose rate dependency, and angular dependency for Cobalt-60 (60Co), 6-MV, and 15-MV beam energies. The performance of the MOSFET clearly shows that it is highly reproducible, independent of field size and dose rate. Furthermore, MOSFET has a very high degree of linearity, with r-value>0.9 for all 3 energies. The calibration factor for 2 similar MOSFET detectors of model TN502-RD were also estimated and compared for all 3 energies. The calibration factor between the 2 similar MOSFET detectors shows a variation of about 1.8% for 60Co and 15 MV, and for 6 MV it shows variation of about 2.5%, indicating that calibration should be done whenever a new MOSFET is used. However, the detector shows considerable angular dependency of about 8.8% variation. This may be due to the variation in radiation sensitivity between flat and bubble sides of the MOSFET, and indicates that positional care must be taken while using MOSFET for stereotactic radiosurgery and stereotactic radiotherapy dosimetric applications.