Calibrated microwave reflectance in low-temperature scanning tunneling microscopy.

We outline calibrated measurements of the microwave reflection coefficient from the tunnel junction of an ultra-high vacuum low temperature scanning tunneling microscope. The microwave circuit design is described in detail, including an interferometer for an enhanced signal-to-noise ratio and a demodulation scheme for lock-in detection. A quantitative, in situ procedure for impedance calibration based on the numerical three-error-term model is presented. Our procedure exploits the response of the microwave reflection signal due to the change of the tunneling conductance caused by sub-nm variation of the tunneling distance. Experimental calibration is achieved by a least-squares numerical fit of simultaneously measured conductance and microwave reflection retraction curves at finite conductance. Our method paves the way for nanoscale microscopy and spectroscopy of dielectric surface properties at GHz frequencies and cryogenic temperatures. This opens a promising pathway even for dielectric fingerprinting at the single molecule limit.

Nanoscale electrochemical charge transfer kinetics investigated by electrochemical scanning microwave microscopy.

We show how microwave microscopy can be used to probe local charge transfer reactions with unprecedented sensitivity, visualizing surface reactions with only a few hundred molecules involved. While microwaves are too fast under classical conditions to interact and sense electrochemical processes, this is different at the nanoscale, where our heterodyne microwave sensing method allows for highly sensitive local cyclic voltammetry (LCV) and local electrochemical impedance spectroscopy (LEIS). LCV and LEIS allow for precise measurement of the localized charge transfer kinetics, as illustrated in this study for a ferrocene self-assembled monolayer immersed in an electrolyte. The theoretical analysis presented here enables a consistent mapping of the faradaic kinetics and the parasitic contributions (nonfaradaic) to be spectrally resolved and subtracted. In particular, this methodology reveals an undistorted assessment of accessible redox site density of states associated with faradaic capacitance, fractional surface coverage and electron transfer kinetics at the nanoscale. The developed methodology opens a new perspective on comprehending electrochemical reactivity at the nanoscale.

In operando charge transport imaging of atomically thin dopant nanostructures in silicon.

Novel approaches to materials design, fabrication processes and device architectures have accelerated next-generation electronics component production, pushing device dimensions down to the nano- and atomic-scale. For device metrology methods to keep up with these developments, they should not only measure the relevant electrical parameters at these length-scales, but ideally do so during active operation of the device. Here, we demonstrate such a capability using the full functionality of an advanced scanning microwave/scanning capacitance/kelvin probe atomic force microscope to inspect the charge transport and performance of an atomically thin buried phosphorus wire device during electrical operation. By interrogation of the contact potential, carrier density and transport properties, we demonstrate the capability to distinguish between the different material components and device imperfections, and assess their contributions to the overall electric characteristics of the device in operando. Our experimental methodology will facilitate rapid feedback for the fabrication of patterned nanoscale dopant device components in silicon, now important for the emerging field of silicon quantum information technology. More generally, the versatile setup, with its advanced inspection capabilities, delivers a comprehensive method to determine the performance of nanoscale devices while they function, in a broad range of material systems.

Ion-driven nanograin formation in early-stage degradation of tri-cation perovskite films.

The operational stability of organic-inorganic halide perovskite based solar cells is a challenge for widespread commercial adoption. The mobility of ionic species is a key contributor to perovskite instability since ion migration can lead to unfavourable changes in the crystal lattice and ultimately destabilisation of the perovskite phase. Here we study the nanoscale early-stage degradation of mixed-halide mixed-cation perovskite films under operation-like conditions using electrical scanning probe microscopy to investigate the formation of surface nanograin defects. We identify the nanograins as lead iodide and study their formation in ambient and inert environments with various optical, thermal, and electrical stress conditions in order to elucidate the different underlying degradation mechanisms. We find that the intrinsic instability is related to the polycrystalline morphology, where electrical bias stress leads to the build-up of charge at grain boundaries and lateral space charge gradients that destabilise the local perovskite lattice facilitating escape of the organic cation. This mechanism is accelerated by enhanced ionic mobility under optical excitation. Our findings highlight the importance of inhibiting the formation of local charge imbalance, either through compositions preventing ionic redistribution or local grain boundary passivation, in order to extend operational stability in perovskite photovoltaics.

Attoampere Nanoelectrochemistry.

Electrochemical microscopy techniques have extended the understanding of surface chemistry to the micrometer and even sub-micrometer level. However, fundamental questions related to charge transport at the solid-electrolyte interface, such as catalytic reactions or operation of individual ion channels, require improved spatial resolutions down to the nanoscale. A prerequisite for single-molecule electrochemical sensitivity is the reliable detection of a few electrons per second, that is, currents in the atto-Ampere (10-18 A) range, 1000 times below today's electrochemical microscopes. This work reports local cyclic voltammetry (CV) measurements at the solid-liquid interface on ferrocene self-assembled monolayer (SAM) with sub-atto-Ampere sensitivity and simultaneous spatial resolution < 80 nm. Such sensitivity is obtained through measurements of the charging of the local faradaic interface capacitance at GHz frequencies. Nanometer-scale details of different molecular organizations with a 19% packing density difference are resolved, with an extremely small dispersion of the molecular electrical properties. This is predicted previously based on weak electrostatic interactions between neighboring redox molecules in a SAM configuration. These results open new perspectives for nano-electrochemistry like the study of quantum mechanical resonance in complex molecules and a wide range of applications from electrochemical catalysis to biophysics.

High-Sensitivity Dual Electrochemical QCM for Reliable Three-Electrode Measurements.

An electrochemical quartz crystal microbalance (EC-QCM) is a versatile gravimetric technique that allows for parallel characterization of mass deposition and electrochemical properties. Despite its broad applicability, simultaneous characterization of two electrodes remains challenging due to practical difficulties posed by the dampening from fixture parasitics and the dissipative medium. In this study, we present a dual electrochemical QCM (dual EC-QCM) that is employed in a three-electrode configuration to enable consequent monitoring of mass deposition and viscous loading on two crystals, the working electrode (WE) and the counter electrode (CE). A novel correction approach, along with a three standard complex impedance calibration, is employed to overcome the effect of dampening while keeping high spectral sensitivity. Separation of viscous loading and rigid mass deposition is achieved by robust characterization of the complex impedance at the resonance frequency. Validation of the presented system is done by cyclic voltammetry characterization of Ag underpotential deposition on gold. The results indicate mass deposition of 412.2 ng for the WE and 345.6 ng for the CE, reflecting a difference of the initially-present Ag adhered to the surface. We also performed higher harmonic measurements that further corroborate the sensitivity and reproducibility of the dual EC-QCM. The demonstrated approach is especially intriguing for electrochemical energy storage applications where mass detection with multiple electrodes is desired.

Nanoscale Charge Accumulation and Its Effect on Carrier Dynamics in Tri-cation Perovskite Structures.

Nanoscale investigations by scanning probe microscopy have provided major contributions to the rapid development of organic-inorganic halide perovskites (OIHP) as optoelectronic devices. Further improvement of device level properties requires a deeper understanding of the performance-limiting mechanisms such as ion migration, phase segregation, and their effects on charge extraction both at the nano- and macroscale. Here, we have studied the dynamic electrical response of Cs0.05(FA0.83MA0.17)0.95PbI3-xBrx perovskite structures by employing conventional and microsecond time-resolved open-loop Kelvin probe force microscopy (KPFM). Our results indicate strong negative charge carrier trapping upon illumination and very slow (>1 s) relaxation of charges at the grain boundaries. The fast electronic recombination and transport dynamics on the microsecond scale probed by time-resolved open-loop KPFM show diffusion of charge carriers toward grain boundaries and indicate locally higher recombination rates because of intrinsic compositional heterogeneity. The nanoscale electrostatic effects revealed are summarized in a collective model for mixed-halide CsFAMA. Results on multilayer solar cell structures draw direct relations between nanoscale ionic transport, charge accumulation, recombination properties, and the final device performance. Our findings extend the current understanding of complex charge carrier dynamics in stable multication OIHP structures.

Nanoscale dipole dynamics of protein membranes studied by broadband dielectric microscopy.

We investigate the nearfield dipole mobility of protein membranes in a wide frequency range from 3 kHz to 10 GHz. The results of our nanoscale dielectric images and spectra of bacteriorhodopsin (bR) reveal Debye relaxations with time constants of τ ∼ 2 ns and τ ∼ 100 ns being characteristic of the dipole moments of the bR retinal and α-helices, respectively. However, the dipole mobility and therefore the protein biophysical function depend critically on the amount of surface water surrounding the protein, and the characteristic mobility in the secondary structure is only observed for humidity levels <30%. Our results have been achieved by adding the frequency as a second fundamental dimension to quantitative dielectric microscopy. The key elements for the success of this advanced technique are the employed heterodyne detection scheme, the broadband electrical signal source, a high frequency optimized cabling, development of calibration procedures and precise finite element modelling. Our study demonstrates the exciting possibilities of broadband dielectric microscopy for the investigation of dynamic processes in cell bioelectricity at the individual molecular level. Furthermore, the technique may shed light on local dynamic processes in related materials science applications like semiconductor research or nano-electronics.

Nondestructive imaging of atomically thin nanostructures buried in silicon.

It is now possible to create atomically thin regions of dopant atoms in silicon patterned with lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These structures are building blocks of quantum devices for physics research and they are likely also to serve as key components of devices for next-generation classical and quantum information processing. Until now, the characteristics of buried dopant nanostructures could only be inferred from destructive techniques and/or the performance of the final electronic device; this severely limits engineering and manufacture of real-world devices based on atomic-scale lithography. Here, we use scanning microwave microscopy (SMM) to image and electronically characterize three-dimensional phosphorus nanostructures fabricated via scanning tunneling microscope-based lithography. The SMM measurements, which are completely nondestructive and sensitive to as few as 1900 to 4200 densely packed P atoms 4 to 15 nm below a silicon surface, yield electrical and geometric properties in agreement with those obtained from electrical transport and secondary ion mass spectroscopy for unpatterned phosphorus δ layers containing ~1013 P atoms. The imaging resolution was 37 ± 1 nm in lateral and 4 ± 1 nm in vertical directions, both values depending on SMM tip size and depth of dopant layers. In addition, finite element modeling indicates that resolution can be substantially improved using further optimized tips and microwave gradient detection. Our results on three-dimensional dopant structures reveal reduced carrier mobility for shallow dopant layers and suggest that SMM could aid the development of fabrication processes for surface code quantum computers.

Direct mapping of the electric permittivity of heterogeneous non-planar thin films at gigahertz frequencies by scanning microwave microscopy.

We obtained maps of electric permittivity at ∼19 GHz frequencies on non-planar thin film heterogeneous samples by means of combined atomic force-scanning microwave microscopy (AFM-SMM). We show that the electric permittivity maps can be obtained directly from the capacitance images acquired in contact mode, after removing the topographic cross-talk effects. This result demonstrates the possibility of identifying the electric permittivity of different materials in a thin film sample irrespectively of their thickness by just direct imaging and processing. We show, in addition, that quantitative maps of the electric permittivity can be obtained with no need for any theoretical calculation or complex quantification procedures when the electric permittivity of one of the materials is known. To achieve these results the use of contact mode imaging is a key factor. For non-contact imaging modes the effects of local sample thickness and of the imaging distance make the interpretation of the capacitance images in terms of the electric permittivity properties of the materials much more complex. The present results represent a substantial contribution to the field of nanoscale microwave dielectric characterization of thin film materials with important implications for the characterization of novel 3D electronic devices and 3D nanomaterials.

A broadband toolbox for scanning microwave microscopy transmission measurements.

In this paper, we present in detail the design, both electromagnetic and mechanical, the fabrication, and the test of the first prototype of a Scanning Microwave Microscope (SMM) suitable for a two-port transmission measurement, recording, and processing the high frequency transmission scattering parameter S21 passing through the investigated sample. The S21 toolbox is composed by a microwave emitter, placed below the sample, which excites an electromagnetic wave passing through the sample under test, and is collected by the cantilever used as the detector, electrically matched for high frequency measurements. This prototype enhances the actual capability of the instrument for a sub-surface imaging at the nanoscale. Moreover, it allows the study of the electromagnetic properties of the material under test obtained through the measurement of the reflection (S11) and transmission (S21) parameters at the same time. The SMM operates between 1 GHz and 20 GHz, current limit for the microwave matching of the cantilever, and the high frequency signal is recorded by means of a two-port Vector Network Analyzer, using both contact and no-contact modes of operation, the latter, especially minded for a fully nondestructive and topography-free characterization. This tool is an upgrade of the already established setup for the reflection mode S11 measurement. Actually, the proposed setup is able to give richer information in terms of scattering parameters, including amplitude and phase measurements, by means of the two-port arrangement.

Calibrated complex impedance of CHO cells and E. coli bacteria at GHz frequencies using scanning microwave microscopy.

The application of scanning microwave microscopy (SMM) to extract calibrated electrical properties of cells and bacteria in air is presented. From the S 11 images, after calibration, complex impedance and admittance images of Chinese hamster ovary cells and E. coli bacteria deposited on a silicon substrate have been obtained. The broadband capabilities of SMM have been used to characterize the bio-samples between 2 GHz and 20 GHz. The resulting calibrated cell and bacteria admittance at 19 GHz were Y cell = 185 µS + j285 µS and Y bacteria = 3 µS + j20 µS, respectively. A combined circuitry-3D finite element method EMPro model has been developed and used to investigate the frequency response of the complex impedance and admittance of the SMM setup. Based on a proposed parallel resistance-capacitance model, the equivalent conductance and parallel capacitance of the cells and bacteria were obtained from the SMM images. The influence of humidity and frequency on the cell conductance was experimentally studied. To compare the cell conductance with bulk water properties, we measured the imaginary part of the bulk water loss with a dielectric probe kit in the same frequency range resulting in a high level of agreement.

Nanoscale Electric Permittivity of Single Bacterial Cells at Gigahertz Frequencies by Scanning Microwave Microscopy.

We quantified the electric permittivity of single bacterial cells at microwave frequencies and nanoscale spatial resolution by means of near-field scanning microwave microscopy. To this end, calibrated complex admittance images have been obtained at ∼19 GHz and analyzed with a methodology that removes the nonlocal topographic cross-talk contributions and thus provides quantifiable intrinsic dielectric images of the bacterial cells. Results for single Escherichia coli cells provide a relative electric permittivity of ∼4 in dry conditions and ∼20 in humid conditions, with no significant loss contributions. Present findings, together with the ability of microwaves to penetrate the cell membrane, open an important avenue in the microwave label-free imaging of single cells with nanoscale spatial resolution.

Probing resistivity and doping concentration of semiconductors at the nanoscale using scanning microwave microscopy.

We present a new method to extract resistivity and doping concentration of semiconductor materials from Scanning Microwave Microscopy (SMM) S11 reflection measurements. Using a three error parameters de-embedding workflow, the S11 raw data are converted into calibrated capacitance and resistance images where no calibration sample is required. The SMM capacitance and resistance values were measured at 18 GHz and ranged from 0 to 100 aF and from 0 to 1 MΩ, respectively. A tip-sample analytical model that includes tip radius, microwave penetration skin depth, and semiconductor depletion layer width has been applied to extract resistivity and doping concentration from the calibrated SMM resistance. The method has been tested on two doped silicon samples and in both cases the resistivity and doping concentration are in quantitative agreement with the data-sheet values over a range of 10(-3)Ω cm to 10(1)Ω cm, and 10(14) atoms per cm(3) to 10(20) atoms per cm(3), respectively. The measured dopant density values, with related uncertainties, are [1.1 ± 0.6] × 10(18) atoms per cm(3), [2.2 ± 0.4] × 10(17) atoms per cm(3), [4.5 ± 0.2] × 10(16) atoms per cm(3), [4.5 ± 1.3] × 10(15) atoms per cm(3), [4.5 ± 1.7] × 10(14) atoms per cm(3). The method does not require sample treatment like cleavage and cross-sectioning, and high contact imaging forces are not necessary, thus it is easily applicable to various semiconductor and materials science investigations.

Quantitative sub-surface and non-contact imaging using scanning microwave microscopy.

The capability of scanning microwave microscopy for calibrated sub-surface and non-contact capacitance imaging of silicon (Si) samples is quantitatively studied at broadband frequencies ranging from 1 to 20 GHz. Calibrated capacitance images of flat Si test samples with varying dopant density (10(15)-10(19) atoms cm(-3)) and covered with dielectric thin films of SiO2 (100-400 nm thickness) are measured to demonstrate the sensitivity of scanning microwave microscopy (SMM) for sub-surface imaging. Using standard SMM imaging conditions the dopant areas could still be sensed under a 400 nm thick oxide layer. Non-contact SMM imaging in lift-mode and constant height mode is quantitatively demonstrated on a 50 nm thick SiO2 test pad. The differences between non-contact and contact mode capacitances are studied with respect to the main parameters influencing the imaging contrast, namely the probe tip diameter and the tip-sample distance. Finite element modelling was used to further analyse the influence of the tip radius and the tip-sample distance on the SMM sensitivity. The understanding of how the two key parameters determine the SMM sensitivity and quantitative capacitances represents an important step towards its routine application for non-contact and sub-surface imaging.