Assessment of encrustation and physicochemical properties of poly(lactide-glycolide) - Papaverine hydrochloride coating on ureteral double-J stents after long-term flow of artificial urine.

Implantation of ureteral stents is associated with inconvenience for the patient, which is related to the natural ability of the ureter to contract. The most frequently used solution is the systemic administration of a diastolic drug, which has a relaxing effect on smooth muscle cells and decreases inconvenience. Current interdisciplinary research aimed at reducing the complications after the implantation of ureteral stents used in the treatment of upper urinary tracts with regard to infection, initiation of encrustation, and fragmentation of stents, and patient pain has not been resolved. This study presents the results of research regarding the impact of a biodegradable coating with the active substance on the physical and chemical properties of ureteral stents used in the treatment of the upper urinary tract. The surface of polyurethane double-J stents was coated with poly(lactide-glycolide) (PLGA) 85/15 loaded with papaverine hydrochloride (PAP) with diastolic properties. The coating for ureteral stents has been designed for short-term implantation. The effect of the coating on the process of encrustation and PAP release by the dynamic in vitro model with artificial urine (AU) up to 30 days was evaluated. The influence of AU on the physical and chemical properties of ureteral stents was determined. As part of the study, surface structure and topography researches; chemical composition analyses using X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and wetting; and surface roughness studies of both PUR stents and coated stents were carried out. The proposed biodegradable PLGA+PAP coating is characterized by controlled drug release, while optimal physicochemical properties does not increase the encrustation process.

Oxide-organic heterostructures: a case study of charge transfer disturbance at a SnO2-copper phthalocyanine buried interface.

Reduced tin dioxide/copper phthalocyanine (SnOx/CuPc) heterojunctions recently gained much attention in hybrid electronics due to their defect structure, allowing tuning of the electronic properties at the interface towards particular needs. In this work, we focus on the creation and analysis of the interface between the oxide and organic layer. The inorganic/organic heterojunction was created by depositing CuPc on SnOx layers prepared with the rheotaxial growth and vacuum oxidation (RGVO) method. Exploiting surface sensitive photoelectron spectroscopy techniques, angle dependent X-ray and UV photoelectron spectroscopy (ADXPS and UPS, respectively), supported by semi-empirical simulations, the role of carbon from adventitious organic adsorbates directly at the SnOx/CuPc interface was investigated. The adventitious organic adsorbates were blocking electronic interactions between the environment and surface, hence pinning energy levels. A significant interface dipole of 0.4 eV was detected, compensating for the difference in work functions of the materials in contact, however, without full alignment of the energy levels. From the ADXPS and UPS results, a detailed diagram of the interfacial electronic structure was constructed, giving insight into how to tailor SnOx/CuPc heterojunctions towards specific applications. On the one hand, parasitic surface contamination could be utilized in technology for passivation-like processes. On the other hand, if one needs to keep the oxide's surficial interactions fully accessible, like in the case of stacked electronic systems or gas sensor applications, carbon contamination must be carefully avoided at each processing step.

Charge transfer quantification in a SnOx/CuPc semiconductor heterostructure: investigation of buried interface energy structure by photoelectron spectroscopies.

A tin oxide/copper phthalocyanine (CuPc) layer stack was investigated with two complementary photoemission methods. Non-destructive analysis of the electronic properties at the SnOx/CuPc interface was performed applying angle-dependent measurements with X-ray photoelectron spectroscopy (ADXPS) and energy-resolved photoemission yield spectroscopy (PYS). The different components (related to oxide layer and organic overlayer as well as to contamination features) observed in the spectra were assigned to a particular layer by relative depth plot analysis. ADXPS allowed determination of the chemical and electronic structure of the investigated samples. The addition of the organic ultra-thin film to the oxide layer caused a significant increase of the structure's photoemission yield. The combination of ADXPS and PYS allowed determination of the work function of constituent layers, and charge transfer phenomena at the SnOx/CuPc buried interface. An interface dipole of 0.23 eV was detected, assigned to charge transfer across the interface from the oxide layer towards the organic film. The energy level alignment at the SnOx/CuPc interface was determined, and presented in a band-like diagram, together with depth-dependent changes of the core energy levels of the structure's constituents. Finally the role of the oxide's defect-related energy levels in the charge transfer was discussed. The results obtained exhibit significance ranging from investigation, basic understanding and application of such hybrid films. Application of these results in hybrid electronic devices can help understanding and furthering this technology.

Zinc oxide as a defect-dominated material in thin films for photovoltaic applications--experimental determination of defect levels, quantification of composition, and construction of band diagram.

In the present work, thin ZnO layers were synthesized by the sol-gel method with subsequent spin-coating on Si(100). We show that the detailed analysis of lab-recorded photoemission spectra in combination with Kelvin probe data yielded the work function, ionization energy, and valence band - Fermi level separation - and hence enabled the construction of band diagrams of the examined layers. With small modifications in preparation, very different films can be obtained. One set shows a homogeneous depth-dependent n carrier distribution, and another a significant carrier concentration gradient from n-type conductivity to almost metal-like n(+) character. Likewise, the surface morphology can be tuned from a uniform, compact surface with spherical single-nm sized grain-like features to a structured surface with 5-10 nm tall crystallites with (002) dominating crystal orientation. Based on the band-bending and the energy levels observed, defects of contradictory nature, i.e. acceptor-donor-trap (ADT) properties, were identified. These defects may be groups of point defects, with opposite character. The ADT states affect the energy levels of the oxide layers and due to their nature cannot be considered in the photoemission experiment as mutually independent. The versatile nature of the synthesis provides us with the opportunity to tune the properties with a high degree of freedom, at low processing costs, yielding layers with an exotic electronic structure. Such layers are interesting candidates for applications in photovoltaic and nanoelectronic devices.