Magnetic Skyrmions with Unconventional Helicity Polarization in a Van Der Waals Ferromagnet.

Skyrmion helicity, which defines the spin swirling direction, is a fundamental parameter that may be utilized to encode data bits in future memory devices. Generally, in centrosymmetric ferromagnets, dipole skyrmions with helicity of -π/2 and π/2 are degenerate in energy, leading to equal populations of both helicities. On the other hand, in chiral materials where the Dzyaloshinskii-Moriya interaction (DMI) prevails and the dipolar interaction is negligible, only a preferred helicity is selected by the type of DMI. However, whether there is a rigid boundary between these two regimes remains an open question. Herein, the observation of dipole skyrmions with unconventional helicity polarization in a van der Waals ferromagnet, Fe5- δ GeTe2 , is reported. Combining magnetometry, Lorentz transmission electron microscopy, electrical transport measurements, and micromagnetic simulations, the short-range superstructures in Fe5- δ GeTe2 resulting in a localized DMI contribution, which breaks the degeneracy of the opposite helicities and leads to the helicity polarization, is demonstrated. Therefore, the helicity feature in Fe5- δ GeTe2 is controlled by both the dipolar interaction and DMI that the former leads to Bloch-type skyrmions with helicity of ±π/2 whereas the latter breaks the helicity degeneracy. This work provides new insights into the skyrmion topology in van der Waals materials.

Field-Free Magnetization Switching in a Ferromagnetic Single Layer through Multiple Inversion Asymmetry Engineering.

A simple, reliable, and self-switchable spin-orbit torque (SOT)-induced magnetization switching in a ferromagnetic single layer is needed for the development of next generation fully electrical controllable spintronic devices. In this work, field-free SOT-induced magnetization switching in a CoPt single layer is realized by broken multiple inversion symmetry through simultaneously introducing both oblique sputtering and a vertical composition gradient. A quantitative analysis indicates that multiple inversion asymmetries can produce dynamical bias fields along both z- and x-axes, leading to the observed field-free deterministic magnetization switching. Our study provides a method to accomplish fully electrical manipulation of magnetization in a ferromagnetic single layer without the external magnetic field and auxiliary heavy metal layer, enabling flexible design for future spin-orbit torque-based memory and logic devices.

Magnetotransport Mechanism of Individual Nanostructures via Direct Magnetoresistance Measurement in situ SEM.

The accurate magnetoresistance (MR) measurement of individual nanostructures is essential and important for either the enrichment of fundamental knowledge of the magnetotransport mechanism or the facilitation of desired design of magnetic nanostructures for various technological applications. Herein, we report a deep investigation on the magnetotransport mechanism of a single CoCu/Cu multilayered nanowire via direct MR measurement using our invented magnetotransport instrument in situ scanning electron microscope. Off-axis electron holography experiments united with micromagnetic simulation prove that the CoCu layers in CoCu/Cu multilayered nanowires form a single-domain structure, in which the alignment of magnetic moments is mainly determined by shape anisotropy. The MR of the single CoCu/Cu multilayered nanowire is measured to be only 1.14% when the varied external field is applied along the nanowire length axis, which matches with the theoretical prediction of the granular film model. Density functional theory calculations further disclose that spin-dependent scattering at the interface between magnetic and nonmagnetic layers is responsible for the intrinsic magnetotransport mechanism.

Interfacial Roughness Facilitated by Dislocation and a Metal-Fuse Resistor Fabricated Using a Nanomanipulator.

Granular magnetic systems consisting of magnetic nanoparticles embedded in a nonmagnetic metallic matrix have emerged as an attractive building block for nanodevices. A key challenge for building interface-based nanodevice applications, such as magnetic memory devices, is to clearly know about the influences of interfacial roughness on the scattering of conduction electrons. Here, we demonstrate a granular magnetic system composed of Co and Cu nanoparticles and further link the atomic structure of the Co/Cu interface to the scattering mechanism of conduction electrons. The multiple scattering is caused by the dislocations at the rough interface, which lead to a reduction of conduction efficiency and an increase of energy consumption. These dislocations mostly originate from the lattice defects on the surface of nanoparticles, the lattice mismatch of two crystal structures, and the different surface energies. Based on the negative effects of a rough interface on electronic transport, we first develop a nanometal-fuse resistor, which could hopefully be used in the protection circuits of nanodevices. Our results may open up the possibility of implementing the low-dimensional granular magnetic materials in nanodevice applications.