High yield and wide lateral size growth of α-Mo2C: exploring the boundaries of CVD growth of bare MXene analogues.

Synthesis of Mo2C bare MXenes, without surface terminations groups, via chemical vapor deposition (CVD) on metal foils is scientifically a very intriguing crystal growth process, and there are still challenges and limited fundamental understanding to overcome to obtain high yield and wide crystal size lateral growth. Achieving large area coverage via direct growth is scientifically vital to utilize the full potential of their unique properties in different applications. In this study, we sought to expand the boundaries of the current CVD growth approach for Mo2C MXenes and gain insights into the possibilities and limitations of large area growth, with a particular focus on controlling Mo concentration. We report a facile modification of their typical CVD growth protocol and show its influence on the Mo2C synthesis, with growth times spanning up to 3 h. Specifically, prior to initiating the CVD growth process, we introduced a holding step in temperature at 1095 °C. This proved to be beneficial in increasing the Mo concentration on the liquid Cu growth surface. We achieved an average Mo2C crystals coverage of approximately 50% of the growth substrate area, increased tendency of coalescence and merging of individual flakes, and lateral flake sizes up to 170µm wide. To gain deeper understanding into their CVD growth behavior, we conducted a systematic investigation of the effect of several factors, including (i) a holding step time on Mo diffusion rate through molten Cu, (ii) the Cu foil thickness over the Mo foil, and (iii) the CVD growth time. Phase, chemical and microstructural characterization by x-ray diffraction, x-ray photon spectroscopy, SEM and scanning/transmission electron microscopy revealed that the grown crystals are single phaseα-Mo2C. Furthermore, insights gained from this study sheds light on crucial factors and inherent limitations that are essential to consider and may help guide future research progress in CVD growth of bare MXenes.

Microstructure and Salt Fog Corrosion of Wrought Mg-Al-Zn and Mg-RE Alloys.

Wrought magnesium alloys have received attention due to their potential application as lightweight materials. However, their use is limited by their poor corrosion resistance. Rare earth additions have the potential to enhance corrosion resistance. The present work included a microstructural investigation and corrosion testing of the alloy WE-43, containing Nd and Y, which was compared against the more conventional compositions of AZ31 and AZ61 alloys. All three alloys exhibited a recrystallized equiaxed structure after hot rolling with the presence of second phases-precipitates. The WE-43 alloy exhibited a better corrosion resistance than AZ31 and AZ61 under salt fog testing, indicated by the lower depth of attack and lower weight loss. The second phases in the microstructure of AZ31 and AZ61 alloys determined their corrosion resistance. The second phases in the AZ31 and AZ61 alloys (based on Al-Mg and Al-Mn phases) were nobler than the Mg matrix and catholically acted, thus sacrificing the Mg matrix. The superior corrosion resistance of WE43 was due to the incorporation of Y in the oxide/hydroxide film. In addition, the second phases in the WE43 consisted of Nd and Y and were less noble than the Mg-matrix. Thus, they acted as anodic sites protecting the Mg-matrix. The above results show the beneficial effect of rare earth additions to wrought Mg alloys towards increased corrosion resistance.

Structural properties of mixed conductor Ba1-xGd1-yLax+yCo2O6-δ.

Ba1-xGd1-yLax+yCo2O6-δ (BGLC) compositions with large compositional ranges of Ba, Gd, and La have been characterised with respect to phase compositions, structure, and thermal and chemical expansion. The results show a system with large compositional flexibility, enabling tuning of functional properties and thermal and chemical expansion. We show anisotropic chemical expansion and detailed refinements of emerging phases as La is substituted for Ba and Gd. The dominating phase is the double perovskite structure Pmmm, which is A-site ordered along the c-axes and with O vacancy ordering along the b-axis in the Ln-layer. Phases emerging when substituting La for Ba are orthorhombic Ba-deficient Pbnm and cubic LaCoO3-based R3̄c. When La is almost completely substituted for Gd, the material can be stabilised in Pmmm, or cubic Pm3̄m, depending on thermal and atmospheric history. We list thermal expansion coefficients for x = 0-0.3, y = 0.2.

Improving carrier transport in Cu2O thin films by rapid thermal annealing.

Cuprous oxide (Cu2O) is a promising material for large scale photovoltaic applications. The efficiencies of thin film structures are, however, currently lower than those for structures based on Cu2O sheets, possibly due to their poorer transport properties. This study shows that post-deposition rapid thermal annealing (RTA) of Cu2O films is an effective approach for improving carrier transport in films prepared by reactive magnetron sputtering. The as-deposited Cu2O films were poly-crystalline, p-type, with weak near band edge (NBE) emission in photoluminescence spectra, a grain size of ~100 nm and a hole mobility of 2-18 cm2 V-1 s-1. Subsequent RTA (3 min) at a pressure of 50 Pa and temperatures of 600-1000 °C enhanced the NBE by 2-3 orders of magnitude, evidencing improved crystalline quality and reduction of non-radiative carrier recombination. Both grain size and hole mobility were increased considerably upon RTA, reaching values above 1 µm and up to 58 cm2 V-1 s-1, respectively, for films annealed at 900-1000 °C. These films also exhibited a resistivity of ~50-200 Ω cm, a hole concentration of ~1015 cm-3 at room temperature, and a transmittance above 80%.

The role of grain boundary scattering in reducing the thermal conductivity of polycrystalline XNiSn (X = Hf, Zr, Ti) half-Heusler alloys.

Thermoelectric application of half-Heusler compounds suffers from their fairly high thermal conductivities. Insight into how effective various scattering mechanisms are in reducing the thermal conductivity of fabricated XNiSn compounds (X = Hf, Zr, Ti, and mixtures thereof) is therefore crucial. Here, we show that such insight can be obtained through a concerted theory-experiment comparison of how the lattice thermal conductivity κ Lat(T) depends on temperature and crystallite size. Comparing theory and experiment for a range of Hf0.5Zr0.5NiSn and ZrNiSn samples reported in the literature and in the present paper revealed that grain boundary scattering plays the most important role in bringing down κ Lat, in particular so for unmixed compounds. Our concerted analysis approach was corroborated by a good qualitative agreement between the measured and calculated κ Lat of polycrystalline samples, where the experimental average crystallite size was used as an input parameter for the calculations. The calculations were based on the Boltzmann transport equation and ab initio density functional theory. Our analysis explains the significant variation of reported κ Lat of nominally identical XNiSn samples, and is expected to provide valuable insights into the dominant scattering mechanisms even for other materials.