Effects of oxygen vacancies and interfacial strain on the metal-insulator transition of VO2 nanobeams.

The role of oxygen vacancies and interfacial strain on the metal-insulator transition (MIT) behavior of high-quality VO2 nanobeams (NBs) synthesized on SiO2/Si substrates employing V2O5 as a precursor has been investigated in this research. Selective oxygen vacancies have been generated by argon plasma irradiation. The MIT is progressively suppressed as the duration of plasma processing increases; in addition, the temperature of MIT (TMIT) drops by up to 95 K relative to the pristine VO2 NBs. Incorporating oxygen vacancies into VO2 may increase its electron concentration, which might shift the Fermi levels upward, strengthen the electronic orbital overlap of the V-V chains, and further stabilize the metallic phase at lower temperatures, based on first-principles calculations. Furthermore, in order to evaluate the influence of substrate-induced strain in our situation, the MIT in two distinct types of VO2 NB samples is examined without metal contacts by using the distinctive light scattering characteristics of the metal (M) and insulator (I) phases (i.e., M/I domains) by optical microscopy. It is found that the domain structures in the "clamped" NBs persisted up to ∼453 K, while the "released" NBs (transferred to a new substrate) did not exhibit any domain structures and turned into an entirely M phase with a dark contrast above ∼348 K. When combined with first-principles calculations, the electronic orbital occupancy in the rutile phase contributes to explaining the interfacial strain-induced modulation of MIT. The current findings shed light on how interfacial strain and oxygen vacancies impact MIT behavior. It also suggests several types of control strategies for MIT in VO2 NBs, which are essential for a broader spectrum of VO2 NB applications.

High-Responsivity and Broadband MoS2 Photodetector Using Interfacial Engineering.

Combining MoS2 with mature silicon technology is an effective method for preparing high-performance photodetectors. However, the previously studied MoS2/silicon-based heterojunction photodetectors cannot simultaneously demonstrate high responsivity, a fast response time, and broad spectral detection. We constructed a broad spectral n-type MoS2/p-type silicon-based heterojunction photodetector. The SiO2 dielectric layer on the silicon substrate was pretreated with soft plasma to change its thickness and surface state. The pretreated SiO2 dielectric layer and the silicon substrate constitute a multilayer heterostructure with a high carrier concentration and responsiveness. Taking silicon-based and n-type MoS2 heterojunction photodetectors as examples, its responsivity can reach 4.05 × 104 A W1- at 637 nm wavelength with a power density of 2 µW mm-2, and the detectable spectral range is measured from 447 to 1600 nm. This pretreated substrate was proven applicable to other n-type TMDCs, such as MoTe2, ReS2, etc., with certain versatility.

High quality VO2 thin films synthesized from V2O5 powder for sensitive near-infrared detection.

Vapor transport method has been successfully used to synthesize high quality VO2 thin films on SiO2/Si substrate using V2O5 as a precursor in an inert-gas environment. The morphological and structural evolutions of the intermediate phases during the nucleation and growth processes were investigated by SEM and Raman spectroscopy, respectively. The results showed that the conversion of V2O5 powder to VO2 thin films was dominated by a melting-evaporation-nucleation-growth mechanism. Further characterization results demonstrated that the high quality crystals of monoclinic VO2 thin films exhibit a sharp resistance change up to 4 orders of magnitude. In addition, the VO2 thin films exhibited good near-infrared response, high stability, and reproducibility under ambient conditions, which should be promising for sensitive near-infrared detection. Our work not only provided a simple and direct approach to synthesize high quality VO2 thin films with distinct phase transition properties but also demonstrated the possible infrared sensing application in the future.

Thermally enhanced optical contrast of graphene oxide for thickness identification.

We present a simple, but rapid and accurate approach to identify the layer number of graphene oxide (GO) by using its thermally enhanced optical contrast via vacuum heating. As expected, changes have been observed both in the thicknesses and chemical structures of the material upon the thermal treatment, which can be attributed to the reduction of the amount of intercalated water and oxygen content. This results in the increase of refractive index and absorption coefficient approaching the values for intrinsic graphene. Finally, we achieve an almost complete recovery of optical contrast of GO compared with the one of graphene. The method would be made suitable for the thickness identification of mass-produced GO since it can greatly facilitate sample evaluation and manipulation, and provide immediate feedback to improve synthesis and processing strategies.

Investigation of dodecane in three-dimensional porous graphene sponge by Raman mapping.

Three-dimensional (3D) carbon nano-materials, e.g. a graphene sponge (GS) are promising candidates for the removal of pollutants and the separation of oil and water. A systematic study on how oils or organic solvents disperse in the porous structures of 3D carbon nano-materials, and the factors affecting their sorption process, would be beneficial for designing a superior sorbent with desirable porous structures. Here, confocal Raman spectroscopic imaging was utilized to explore the absorption and desorption processes of dodecane (a constituent in petroleum products) in 3D porous GS with different pore size. It was found that dodecane predominately locates within the interior pores composed of reduced graphene oxide (rGO) sheets, which provide storage spaces for the absorbed molecules. The larger pore GS has a higher absorption capacity and faster desorption rate compared to the smaller one, which is due to the higher pore volume and weaker interaction with the absorbed molecules. A possible mechanism was also proposed to explain the role of porous macrostructures on the absorption and desorption properties of GSs.