Structure and Optical Properties of Sn-Based Halide Perovskites (C10H18N2)SnX4 (X = Cl, Br, I).

Low-dimensional tin-based halide perovskites are considered as eco-friendly substitutions of the iconic lead-based perovskites to host the potential as optoelectronic materials. However, a fundamental understanding of the structure-property relationship of these Sn(II)-based hybrids is still inadequate due to the limited members of this material family. To our knowledge, there is still lack of reports on a series of Sn(II)-based halide perovskites with the same organic cation but covering chloride, bromide, and iodide. In this work, three new halide perovskites TMPDASnX4 (X = Cl, Br, I) (TMPDA = N,N,N',N'-tetramethyl-1,4-phenylenediamine) are successfully synthesized, which provide the ideal paradigm to study the halogen-dependent evolution of the structure and properties of Sn(II)-based hybrid perovskites. Despite sharing the same monoclinic lattice (P21/m space group), it is demonstrated that TMPDASnCl4 adopts a one-dimensional structure composed of a five-coordinated pyramid configuration due to an extremely long Sn···Cl distance, while the typical two-dimensional motif is still maintained in TMPDASnBr4 and TMPDASnI4. The ambient stability is declined in the order from chloride to bromide and then to iodide. TMPDASnCl4 exhibits a broad-band bluish-white-light emission (centered at 515 nm, full width at half-maximum (fwhm) = 193 nm) with the Commission Internationale de l' Elairage (CIE) coordinates as (0.29, 0.34). Further, the correlated color temperature and color-rendering index were determined as 7617 K and 80.5, respectively. Based on the synthesis of new crystals, our work sheds light on the composition-structure-property relationship of hybrid Sn(II)-based halide perovskites.

Phase Discovery and Selected Synthesis of Subvalent Niobium Tellurides Using a Polytelluride Flux Strategy.

Transition metal subchalcogenides involve electron-rich metals and can facilitate an in-depth understanding of the relationships among quantum properties such as superconductivity, charge density wave, and topological band structures. However, effective experimental routes toward synthesizing transition metal subchalcogenides are still lacking, hindering the development of new quantum materials. Herein, we propose a eutectic polytelluride flux strategy as an excellent solution to address phase discovery and crystal growth in transition metal subtelluride systems. We report new phases easily and selectively synthesized using a eutectic "K3Te4" polytelluride flux upon adjusting the ratio of Nb metal to flux in the starting materials (K/Nb/Te = 3:x:4). Using a high Nb content in the solvent (x = 2 and 1), crystals of KNb3Te3O0.38 and K0.9Nb3Te4 are obtained. Both subtellurides exhibit diverse Nb clusters, including face-sharing and edge-sharing Nb6 octahedral columns and zig-zag Nb chains. Reducing the Nb content to x = 0.33 leads to the formation of a layered compound, K1.06NbTe2. This compound comprises a NbTe6 trigonal prism with K intercalated between the layers. Single crystals of known binary Nb tellurides can also be grown using another eutectic flux "KTe3.2", and the obtained NbTe2 exhibits a new polymorphism with extra trimerization along the b-axis in the Nb-Nb bonded double zig-zag cluster. Precise control over the structural dimensionality and oxidation state, combined with the facile crystal growth process, makes our synthetic strategy an efficient route to explore quantum materials in transition metal subchalcogenides.

Zero-Dimensional Halides with ns2 Electron (Sb3+) Activation to Generate Broad Photoluminescence.

Organic-inorganic metal halides (OIMHs) have various crystal structures and offer excellent semiconducting properties. Here, we report three novel OIMHs, (PPA)6InBr9 (PPA = [C6H5(CH2)3NH3]+), (PBA)2SbBr5, and (PBA)2SbI6 (PBA = [C6H5(CH2)4NH3]+), showing typical zero-dimensional (0D) structure, octahedra dimers, and corner-sharing one-dimensional chains and crystallized in the monoclinic system with P21, P21/c, and C2/c space groups, respectively. (PPA)6InBr9, (PBA)2SbBr5, and (PBA)2SbI6 have experimental optical band gaps of ∼3.16, ∼2.24, and 1.48 eV, respectively. (PPA)6InBr9 exhibits bright-orange light emission centered at 642 nm with a full-width at half-maximum of 179 nm (0.51 eV) and a Stokes shift of 277 nm (1.46 eV). After Sb3+ doping, the peak position did not change, and the photoluminescence quantum yield increased significantly from 9.2 to 53.0%. The efficient emission of Sb:(PPA)6InBr9 stems from the isolated ns2 luminescent center and strong electron-phonon coupling, making the spin-forbidden 3P1-1S0 observable. By combining commercial blue and green phosphors with orange-red-light-emitting (PPA)6In0.99Sb0.01Br9, a white-light-emitting diode was constructed, with the color-rendering index reaching up to 92.3. Our work highlights three novel 0D OIMHs, with chemical doping of Sb3+ shown to significantly enhance the luminescence properties, demonstrating their potential applications in solid-state lighting.

High-Efficiency Intrinsic Yellow-Orange Emission in Hybrid Indium Bromide with Double Octahedral Configuration.

Zero-dimensional (0D) In-based organic-inorganic metal halides (OIMHs) have received growing interest in recent years as promising luminescent materials. However, the high efficiencies of 0D In-based OIMHs are all dependent on Sb doping in the existing literature. Here, we report a novel 0D In-based OIMH (C10H22N2)2In2Br10, which exhibits intrinsic broadband emission (610 nm), and the photoluminescence quantum yield (PLQY) can reach 70% without Sb doping. (C10H22N2)2In2Br10 shows a typical 0D structure with three different In-Br polyhedra (two octahedra and one tetrahedron) separated by large organic cations. Based on the optical property measurements and theoretical calculations, we demonstrate that (C10H22N2)2In2Br10 is an indirect semiconductor with a band gap of 3.74 eV, and the In-Br inorganic moiety is primarily responsible for the intense emission of (C10H22N2)2In2Br10. Interestingly, the unique double octahedral configuration in (C10H22N2)2In2Br10 may enhance the structural distortion and stimulate the self-trapped excitons (STEs), leading to the related high PLQY. Our work provides a novel 0D In-based OIMH with high-efficiency intrinsic emission, which is helpful for understanding the structure-PL relationships of hybrid halides.

ANi5Bi5.6+δ (A = K, Rb, and Cs): Quasi-One-Dimensional Metals Featuring [Ni5Bi5.6+δ]- Double-Walled Column with Strong Diamagnetism.

A new series of compounds, ANi5Bi5.6+δ (where A = K, Rb, and Cs) are discovered with a quasi-one-dimensional (Q1D) [Ni5Bi5.6+δ]- double-walled column and a coaxial inner one-dimensional Bi atomic chain. The columns are linked to each other by intercolumn Bi-Bi bonds and separated by an A+ cation. Typical metallic behaviors with strong correlation of itinerant electrons and the Sommerfeld coefficient enhanced with the increasing cationic radius were experimentally observed and supported by first-principles calculations. Compared to AMn6Bi5 (where A = K, Rb, and Cs), the enhanced intercolumn distances and the substitution of Ni for Mn give rise to strong diamagnetic susceptibilities in ANi5Bi5.6+δ. First-principles calculations reveal possible uncharged Ni atoms with even number of electrons in ANi5Bi5.6+δ, which may explain the emergence of diamagnetism. ANi5Bi5.6+δ, as Q1D diamagnetic metals with strong electron correlation, provide a unique platform to understand exotic magnetism and explore novel quantum effects.

(BA)10AgBi2Br19: a one-dimensional halide double perovskite with a unique Br trimer.

A one-dimensional (1D) halide double perovskite, (BA)10AgBi2Br19, is synthesized, which features 1D corner-sharing perovskite ribbons with a width of three octahedra. It is the first reported 1D derivative of a halide double perovskite, showing an unexpected narrow band gap (2.46 eV) due to the unique Br trimer in structure.

KMnCuTe2: a layered antiferromagnetic semiconductor with long metal-metal distance.

The magnetic semiconductor in a two-dimensional system is a major subject for both theoretical and experimental investigations. Here we report the synthesis of a new quaternary manganese chalcogenide KMnCuTe2, which shows layered structure and antiferromagnetic (AFM) semiconducting features. Single crystals of KMnCuTe2 were obtained using a self-flux method and based on single-crystal X-ray diffraction, KMnCuTe2 adopts the ThCr2Si2-type structure composed of edge-sharing tetrahedral layers separated by K+ cations. The Mn and Cu atoms randomly distribute in the centre of tetrahedral units. Attributed to the large radius of Te, KMnCuTe2 has large lattice parameters (a = 4.3115(3) Å and c = 14.9360(20) Å), leading to a long metal-metal distance (3.049 Å) in the tetrahedral layers. Based on the experiments and theoretical calculations, KMnCuTe2 exhibits a G-type AFM interaction with the transition temperature at around 225 K and an indirect semiconducting nature with the band gap of 0.95 eV. The magnetic semiconducting property of KMnCuTe2 is unique in AMnMCh2 systems (A = Li, Na, K, M = Cu, Ag and Ch = S, Se, Te), which could be associated with the large metal-metal distance. Our work not only highlights the role of metal-metal interactions on regulating the properties of ThCr2Si2-type compounds, but also provides a feasible strategy to obtain the layered magnetic semiconductor.

Improving the Chemical Stability of Narrow-Band Green-Emitting Manganese(II) Hybrid by Zn-Doping.

Hybrid tetrahedral Mn(II)-based halides show great potential for narrow-band green emitters, which could be applied in the liquid crystal display field. However, the strategy to improve the chemical stability of tetrahedral Mn hybrids has not been fully investigated. Here, we demonstrate that Zn doping can be an effective route to significantly improve the stability of tetrahedral Mn hybrids under air conditions without compromising the luminous efficiency. A new bromide (ABI)2MnBr4 (ABI = 2-aminobenzimidazole) is synthesized, which exhibits a typical zero-dimensional structure with isolated [MnBr4]2- tetrahedra in the P1̅ space group. Under 450 nm excitation, a narrow-band green-emitting peak at 516 nm is observed with a full width at half maximum of 42 nm. It is indicated that spontaneous phase transition from the tetrahedral to octahedral motif occurs in this Mn hybrid driven by humidity, combined with the emission color change from green to red. Interestingly, this phase transition could be strongly suppressed by Zn doping with a very low doping amount (5%), leading to the significantly improved chemical stability of (ABI)2MnBr4 without reducing the photoluminescence quantum yield. Our work provides a simple and feasible strategy to enhance the chemical stability of the green-emitting (ABI)2MnBr4, and it may also be applicable for other tetrahedral Mn-based hybrids.

Synthetic-Method-Dependent Antimony Bromides and Their Photoluminescent Properties.

Recently, excellent optical properties of low-dimensional organic-inorganic metal halides, stemming from their tunable structure and optoelectronic properties, have been demonstrated. The synthetic method is critical because it is highly related to the structure and properties of the halide. Herein, we obtain two different antimony bromides, (Bmpip)2SbBr5 and (Bmpip)3Sb2Br9, which both possess the P21/c space group having different crystal structures, and this confirms the important influence of synthesis on the single-crystal structure. (Bmpip)2SbBr5 contains Bmpip+ and [SbBr5]2- pyramids, and (Bmpip)3Sb2Br9 consists of Bmpip+ and Sb-based dimers [Sb2Br9]3-. Under 400 nm excitation, (Bmpip)2SbBr5 exhibits a 640 nm orange emission with a quantum yield of ∼11.5% owing to Sb 5s2 electron luminescence. A diode was fabricated by (Bmpip)2SbBr5 and commercial phosphors and showed a high color render index of 92. Our work reveals the effect of the preparation method on the crystal structure. A luminescent material was finally identified.

Photoluminescent Properties of Two-Dimensional Manganese(II)-Based Perovskites with Different-Length Arylamine Cations.

The participation of organic cations plays an important role in tuning broad-spectra emissions. Herein, we synthesized a series of Mn(II)-based two-dimensional (2D) halide perovskites with arylamine cations of different lengths having the general formula (C6H5(CH2)xNH3)2MnCl4 (x = 1-4), with the x = 4 compound reported here for the first time. With the increase in the -(CH2)- in organic cations, the distance between adjacent inorganic layers increases, causing the title compounds to exhibit different structural distortions. As the Mn-Cl-Mn angular distortion increases, the experimental optical band gaps of the title compounds increase correspondingly. When the angle distortion between the octahedrons of the compounds is similar, the band gaps may also be affected by the distortion of the octahedron itself (the bond-length distortion of 2 is greater than that of 4). Under UV-light irradiation at 298 K, all of the compounds exhibit two emission peaks centered at 480-505 and 610 nm, corresponding to the organic-cation emission and the 4T1(G) to 6A1(S) radiative transition of Mn2+ ions, respectively. Among these title compounds, (PPA)2MnCl4 [(PPA)+ = C6H5(CH2)3NH3+] exhibits the strongest photoluminescence (PL). The study of the title compounds contributes to an in-depth understanding of the relationship between the structural distortion and optical properties of 2D Mn(II)-based perovskite materials.

Effect of Cu Doping on Structure and Physical Properties in the Antiferromagnetic Dirac Semimetal CaMnBi2.

The newly discovered AMnBi2 (A = Ca, Sr, Ba, Eu, and Yb) materials composed of two-dimensional Bi square nets provide an excellent platform to investigate the effect of magnetism on topological band structures. Effectively tuning the magnetic interaction in AMnBi2 is of great importance to advance this issue. Here, we describe an effective route to tune the magnetism in Dirac semimetal CaMnBi2 through Cu doping. Structural analysis on CaMn1-xCuxBi2 single crystals indicates that Cu atoms occupy the Mn sites randomly, with the maximum doping level of 25%. After Cu doping, the Bi square net in charge of the Dirac band is still retained, but the Bi-Bi bond distance is markedly shortened. The antiferromagnetic interaction of CaMnBi2 is strongly weakened in the Cu-doped crystals, with the transition temperature decreased from 260 to 85 K. On the contrary, the ferromagnetic component that originated from the canted AFM is enhanced, suggesting that the spin canting in this system is tunable. In addition, the magnetoresistance is decreased upon Cu doping, probably due to the disorder in structure. Our work suggests that the CaMn1-xCuxBi2 (0 ≤ x ≤ 0.25) system can offer a suitable playground to address the interplay between magnetism and the topological state.

Zero-Dimensional Lead-Free Halide with Indirect Optical Gap and Enhanced Photoluminescence by Sb Doping.

Three new lead-free organic-inorganic metal halides (OIMHs) (C7H8N3)3InX6·H2O (X = Cl, Br) and (C7H8N3)2SbBr5 were synthesized. First-principles calculations indicate that the highest occupied molecular orbitals (HOMOs) of the two In-based OIMHs are constituted of π orbitals from [C7H8N3]+ spacers. (C7H8N3)3InX6·H2O (X = Cl, Br) shows an indirect optical gap, which may result from this organic-contributed band edge. Despite the indirect-gap nature with extra phonon process during absorption, the photoluminescence of (C7H8N3)3InBr6·H2O can still be significantly enhanced through Sb doping, with the internal photoluminescence quantum yields (PLQY) increased 10-fold from 5% to 52%. A white light-emitting diode (WLED) was fabricated based on (C7H8N3)3InBr6·H2O:Sb3+, exhibiting a high color-rendering index of 90. Our work provides new systems to deeply understand the principles for organic spacer choice to obtain the 0D metal OIMHs with specific band structure and also the significant enhancement of luminescence performance by chemical doping.

Structure and Optical Properties of Hybrid-Layered-Double Perovskites (C8H20N2)2AgMBr8 (M = In, Sb, and Bi).

The Pb-free hybrid-layered-double perovskites (HLDPs) have been proposed as green and stable semiconducting materials for optoelectronic devices, but the synthesized members are still limited. Here, we report the synthesis of three new HLDPs, (C8H20N2)2AgMBr8 (M = In, Sb, and Bi), by a solution method using 1,4-bis(ammoniomethyl)cyclohexane (C8H20N22+) as the organic spacing cation. All three of these HLDPs show ⟨100⟩-oriented layered structures with Ag and In/Sb/Bi order arranged in corner-sharing octahedral layers. The first-principle calculations indicate the indirect-gap nature of (C8H20N2)2AgInBr8 and (C8H20N2)2AgSbBr8, while their Bi counterpart shows a direct band gap after considering spin-orbit coupling. The band gaps obtained by diffuse-reflectance spectroscopy are 3.11, 2.60, and 2.70 eV for M = In, Sb, and Bi, respectively. (C8H20N2)2AgInBr8 shows a broadband red emission centered at 690 nm, and it is mainly attributed to the self-trapped-excitons mechanism. Our results not only provide a series of new "Pb-free" HLDPs with chemical diversity but also help us to further understand the structure-property relationships of HLDP materials.

Cubic AgMnSbTe3 Semiconductor with a High Thermoelectric Performance.

The reaction of MnTe with AgSbTe2 in an equimolar ratio (ATMS) provides a new semiconductor, AgMnSbTe3. AgMnSbTe3 crystallizes in an average rock-salt NaCl structure with Ag, Mn, and Sb cations statistically occupying the Na sites. AgMnSbTe3 is a p-type semiconductor with a narrow optical band gap of ∼0.36 eV. A pair distribution function analysis indicates that local distortions are associated with the location of the Ag atoms in the lattice. Density functional theory calculations suggest a specific electronic band structure with multi-peak valence band maxima prone to energy convergence. In addition, Ag2Te nanograins precipitate at grain boundaries of AgMnSbTe3. The energy offset of the valence band edge between AgMnSbTe3 and Ag2Te is ∼0.05 eV, which implies that Ag2Te precipitates exhibit a negligible effect on the hole transmission. As a result, ATMS exhibits a high power factor of ∼12.2 µW cm-1 K-2 at 823 K, ultralow lattice thermal conductivity of ∼0.34 W m-1 K-1 (823 K), high peak ZT of ∼1.46 at 823 K, and high average ZT of ∼0.87 in the temperature range of 400-823 K.

Light-Emitting 0D Hybrid Metal Halide (C3H12N2)2Sb2Cl10 with Antimony Dimers.

Low-dimensional organic-inorganic metal halides (OIMHs), as emerging light-emitting materials, have aroused widespread attention owing to their unique structural tunability and photoelectric characteristics. OIMHs are also promising materials for optoelectronic equipment, light-emitting diodes, and photodetectors. In this study, (C3H12N2)2Sb2Cl10 (C3H12N22+ is an N-methylethylenediamine cation), a new zero-dimensional OIMH, has been reported, and (C3H12N2)2Sb2Cl10 possesses a P21/n space group. The (C3H12N2)2Sb2Cl10 structure contains [Sb2Cl10]4- dimers (composed of two edge-sharing [SbCl6]3- octahedra) that are surrounded by C3H12N22+ cations. The experimental band gap of (C3H12N2)2Sb2Cl10 is 3.80 eV, and density functional theory calculation demonstrates that (C3H12N2)2Sb2Cl10 possesses a direct band gap, with the edge of the band gap mainly contributed from the inorganic units. (C3H12N2)2Sb2Cl10 exhibits good ambient and thermal stability. Under 395 nm excitation at room temperature, (C3H12N2)2Sb2Cl10 exhibits a broad emission with a full width at half-maximum of ∼114 nm, peaking at 480 nm, and the broad emission was ascribed to self-trapped exciton emission.

Correlation of Tunable CoSi4 Tetrahedron with the Superconducting Properties of LaCoSi.

It is known that as the FeAs4 tetrahedron in the Fe-based superconductor is close to the regular tetrahedron, critical temperature (Tc) can be greatly increased. Recently, a Co-based superconductor of LaCoSi (4 K) with "111" structure was found. In this work, we improve the Tc of LaCoSi through structural regulation. Tc can be increased by the chemical substitution of Co by Fe, while the superconductivity is suppressed by the Ni substitution. The combined analysis of neutron and synchrotron X-ray powder diffractions reveals that the change of the Si-Co-Si bond angles of the CoSi4 tetrahedron is possibly responsible for the determination of superconducting properties. The Fe chemical substitution is favorable for the formation of the regular tetrahedron of CoSi4. The present new Co-based superconductor of LaCoSi provides a possible method to enhance the superconductivity performance of the Co-based superconductors via controlling Co-based tetrahedra similar to those well established in the Fe-based superconductors.

Superconductivity in Co-Layered LaCoSi.

It is known that few Co-based superconducting compounds have been found compared with their Fe- or Ni-based counterparts. In this study, we have found superconductivity of 4 K in the LaCoSi compound for the first time. The combined analysis of neutron and synchrotron X-ray powder diffractions reveals that LaCoSi exhibits an isostructure with the known Fe-based LiFeAs superconductor, which is the first "111" Co-based superconductor. First-principles calculation shows that LaCoSi presents a quasi-two-dimensional band structure that is also similar to that of LiFeAs. The small structural distortion may be more conducive to the emergence of superconductivity in the LaCoSi compound, which provides a direction for finding new Co-based superconducting compounds.

Kx[Bi4-xMnxS6], Design of a Highly Selective Ion Exchange Material and Direct Gap 2D Semiconductor.

Layered sulfides with high selectivity for binding heavy metal ions and radionuclide ions are promising materials in effluent treatment and water purification. Here we present a rationally designed layered sulfide Kx[Bi4-xMnxS6] (x = 1.28) deriving from the Bi2Se3-structure type by targeted substitution to generate quintuple [Bi4-xMnxS6]x- layers and K+ cations between them. The material has dual functionality: it is an attractive semiconductor with a bandgap of 1.40 eV and also an environmental remediation ion-exchange material. The compound is paramagnetic, and optical adsorption spectroscopy and DFT electronic structure calculations reveal that it possesses a direct band gap and a work function of 5.26 eV. The K+ ions exchange readily with alkali or alkaline-earth ions (Rb+, Cs+, and Sr2+) or soft ions (Pb2+, Cd2+, Cr3+, and Zn2+). Furthermore, when the K+ ions are depleted the Mn2+ ions in the Bi2Se3-type slabs can also be replaced by soft ions, achieving large adsorption capacities. The ion exchange reactions of Kx[Bi4-xMnxS6] can be used to create new materials of the type Mx[Bi4-xMnxS6] in a low temperature kinetically controlled manner with significantly different electronic structures. The Kx[Bi4-xMnxS6] (x = 1.28) exhibits efficient capture of Cd2+ and Pb2+ ions with high distribution coefficient, Kd (107 mL/g), and exchange capacities of 221.2 and 342.4 mg/g, respectively. The material exhibits excellent capacities even in high concentration of competitive ions and over a broad pH range (2.5-11.0). The results highlight the promise of the Kx[Bi4-xMnxS6] (x = 1.28) phase to serve not only as a highly selective adsorbent for industrial and nuclear wastewater but also as a magnetic 2D semiconductor for optoelectronic applications.

Cs0.9Ni3.1Se3: A Ni-Based Quasi-One-Dimensional Conductor with Spin-Glass Behavior.

In this work, we report the discovery of a new Ni-based quasi-one-dimensional selenide: Cs0.9Ni3.1Se3. This compound adopts the TlFe3Te3-type structure with space group P63/ m, which consists of infinite [Ni3Se3] chains with face-sharing Ni6 octahedra along the c direction. The lattice parameters are calculated as a = 9.26301(4) Å and c = 4.34272(2) Å, with the Ni-Ni distance in the ab plane as 2.582(3) Å, suggesting the formation of a Ni-Ni metallic bond in this compound. Interestingly, it has been found that Cs0.9Ni3.1Se3 is nonstoichiometric, which is different from the other TlFe3Te3-type phases reported so far. Structure refinement shows that the extra Ni atom in the structure may occupy the 2c site, together with Cs atoms. Cs0.9Ni3.1Se3 shows metallic behavior with monotonously decreased resistivity with temperatures from 300 to 0.5 K. Measurements on the magnetic susceptibility display a spin-glass state below 7 K. The specific heat curve gives a Sommerfeld coefficient of 14.6 mJ·K-2·mol-1 and a Debye temperature of 143.6 K. The discovery of this new compound enriches the diversity of low-dimensional materials in a transition-metal-based family and also sheds light on the structure-property relationship of this system.

Hexagonal SiC with spatially separated active sites on polar and nonpolar facets achieving enhanced hydrogen production from photocatalytic water reduction.

Sufficient spatial separation of photo-generated electrons and holes plays a significant role in affecting the efficiency for solar energy conversion. Non-equivalent facets of a catalyst are known to possess different charge distribution properties. Here, we report that hexagonal 6H-SiC, a metal-free, environmentally friendly, polar semiconductor, exhibits different charge distribution and photocatalytic properties on naturally occurring Si-{0001} and {10-10} facets. Very strong selectivity of metals in situ photodeposition occurs in these two facets, demonstrating that the photo-excited electrons are assembled only on polar Si-{0001} facets while the holes are assembled on non-polar {10-10} facets. Consequently, reduction reactions occur only on the Si-{0001} facets with noble metals, and meantime oxidation occurs only in {10-10} with metal oxide. We show that the activity of photocatalytic water splitting is significantly enhanced by this kind of selective depositions resulting from the charge spatial separation. The underlying mechanism is investigated in terms of experimental evidence and first principles calculations. Our results demonstrate that the utilization of facets with opposite catalytic characteristics could be a feasible means to enhance the photocatalytic performance in diverse semiconducting materials. This is, in particular, of interest for polar semiconductors, as their particles always naturally occur in both polar facets and non-polar ones without needing facet engineering.