Flat Γ Moiré Bands in Twisted Bilayer WSe_{2}.

The recent observation of correlated phases in transition metal dichalcogenide moiré systems at integer and fractional filling promises new insight into metal-insulator transitions and the unusual states of matter that can emerge near such transitions. Here, we combine real- and momentum-space mapping techniques to study moiré superlattice effects in 57.4° twisted WSe_{2} (tWSe_{2}). Our data reveal a split-off flat band that derives from the monolayer Γ states. Using advanced data analysis, we directly quantify the moiré potential from our data. We further demonstrate that the global valence band maximum in tWSe_{2} is close in energy to this flat band but derives from the monolayer K states which show weaker superlattice effects. These results constrain theoretical models and open the perspective that Γ-valley flat bands might be involved in the correlated physics of twisted WSe_{2}.

Probing magnetism in 2D materials at the nanoscale with single-spin microscopy.

The discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) crystals has generated widespread interest. Making further progress in this area requires quantitative knowledge of the magnetic properties of vdW magnets at the nanoscale. We used scanning single-spin magnetometry based on diamond nitrogen-vacancy centers to image the magnetization, localized defects, and magnetic domains of atomically thin crystals of the vdW magnet chromium(III) iodide (CrI3). We determined the magnetization of CrI3 monolayers to be ≈16 Bohr magnetons per square nanometer, with comparable values in samples with odd numbers of layers; however, the magnetization vanishes when the number of layers is even. We also found that structural modifications can induce switching between ferromagnetic and antiferromagnetic interlayer ordering. These results demonstrate the benefit of using single-spin scanning magnetometry to study the magnetism of 2D vdW magnets.

Collapse of the Mott Gap and Emergence of a Nodal Liquid in Lightly Doped Sr(2)IrO(4).

We report angle resolved photoemission experiments on the electron doped Heisenberg antiferromagnet (Sr(1-x)La(x))(2)IrO(4). For a doping level of x=0.05, we find an unusual metallic state with coherent nodal excitations and an antinodal pseudogap bearing strong similarities with underdoped cuprates. This state emerges from a rapid collapse of the Mott gap with doping resulting in a large underlying Fermi surface that is backfolded by a (π,π) reciprocal lattice vector which we attribute to the intrinsic structural distortion of Sr(2)IrO(4).

Threshold voltage and space charge in organic transistors.

We investigate rubrene single-crystal field-effect transistors, whose stability and reproducibility are sufficient to measure systematically the shift in threshold voltage as a function of channel length and source-drain voltage. The shift is due to space charge transferred from the contacts and can be modeled quantitatively without free fitting parameters, using Poisson's equation, and by assuming that the density of states in rubrene is that of a conventional inorganic semiconductor. Our results demonstrate the consistency, at the quantitative level, of a variety of recent experiments on rubrene crystals and show how the use of field-effect transistor measurements can enable the determination of microscopic parameters (e.g., the effective mass of charge carriers).