The Winner Takes It All: Carbon Supersedes Hexagonal Boron Nitride with Graphene on Transition Metals at High Temperatures.

The production of high-quality hexagonal boron nitride (h-BN) is essential for the ultimate performance of 2D materials-based devices, since it is the key 2D encapsulation material. Here, a decisive guideline is reported for fabricating high-quality h-BN on transition metals. It is crucial to exclude carbon from the h-BN related process, otherwise carbon prevails over boron and nitrogen due to its larger binding energy, thereupon forming graphene on metals after high-temperature annealing. The surface reaction-assisted conversion from h-BN to graphene with high-temperature treatments is demonstrated. The pyrolysis temperature Tp is an important quality indicator for h-BN/metals. When the temperature is lower than Tp , the quality of the h-BN layer is improved upon annealing. While the annealing temperature is above Tp , in case of carbon-free conditions, the h-BN disintegrates and nitrogen desorbs from the surface more easily than boron, eventually leading to clean metal surfaces. However, once the h-BN layer is exposed to carbon, graphene forms on Pt(111) in the high-temperature regime. This not only provides an indispensable principle (avoid carbon) for fabricating high-quality h-BN materials on transition metals, but also offers a straightforward method for the surface reaction-assisted conversion from h-BN to graphene on Pt(111).

High-Quality Hexagonal Boron Nitride from 2D Distillation.

The production of high-quality two-dimensional (2D) materials is essential for the ultimate performance of single layers and their hybrids. Hexagonal boron nitride (h-BN) is foreseen to become the key 2D hybrid and packaging material since it is insulating, impermeable, flat, transparent, and chemically inert, though it is difficult to attain in ultimate quality. Here, a scheme is reported for producing single layer h-BN that shows higher quality in view of mosaicity and strain variations than material from chemical vapor deposition (CVD). We delaminate CVD h-BN from Rh(111) and transfer it to a clean metal surface. The twisting angle between BN and the second substrate yields metastable moiré structures. Annealing above 1000 K leads to 2D distillation, i.e., catalyst-assisted BN sublimation from the edges of the transferred layer and subsequent condensation into superior quality h-BN. This provides a way for 2D material production remote from CVD instrumentation.

Catalyst Proximity-Induced Functionalization of h-BN with Quat Derivatives.

Inert single-layer boron nitride (h-BN) grown on a catalytic metal may be functionalized with quaternary ammonium compounds (quats) that are widely used as nonreactive electrolytes. We observe that the quat treatment, which facilitates the electrochemical transfer of two-dimensional materials, involves a decomposition of quat ions and leads to covalently bound quat derivatives on top of the 2D layer. Applying tetraoctylammonium and h-BN on rhodium, the reaction product is top-alkylized h-BN as identified with high-resolution X-ray photoelectron spectroscopy. The alkyl chains are homogeneously distributed across the surface, and the properties thereof are well-tunable by the choice of different quats. The functionalization further weakens the 2D material-substrate interaction and promotes easy transfer. Therefore, the functionalization scheme that is presented enables the design of 2D materials with tailored properties and with the freedom to position and orient them as required. The mechanism of this functionalization route is investigated with density functional theory calculations, and we identify the proximity of the catalytic metal substrate to alter the chemical reactivity of otherwise inert h-BN layers.

Centimeter-Sized Single-Orientation Monolayer Hexagonal Boron Nitride With or Without Nanovoids.

Large-area hexagonal boron nitride (h-BN) promises many new applications of two-dimensional materials, such as the protective packing of reactive surfaces or as membranes in liquids. However, scalable production beyond exfoliation from bulk single crystals remained a major challenge. Single-orientation monolayer h-BN nanomesh is grown on 4 in. wafer single crystalline rhodium films and transferred on arbitrary substrates such as SiO2, germanium, or transmission electron microscopy grids. The transfer process involves application of tetraoctylammonium bromide before electrochemical hydrogen delamination. The material performance is demonstrated with two applications. First, protective sealing of h-BN is shown by preserving germanium from oxidation in air at high temperatures. Second, the membrane functionality of the single h-BN layer is demonstrated in aqueous solutions. Here, we employ a growth substrate intrinsic preparation scheme to create regular 2 nm holes that serve as ion channels in liquids.

Switching stiction and adhesion of a liquid on a solid.

When a gecko moves on a ceiling it makes use of adhesion and stiction. Stiction--static friction--is experienced on microscopic and macroscopic scales and is related to adhesion and sliding friction. Although important for most locomotive processes, the concepts of adhesion, stiction and sliding friction are often only empirically correlated. A more detailed understanding of these concepts will, for example, help to improve the design of increasingly smaller devices such as micro- and nanoelectromechanical switches. Here we show how stiction and adhesion are related for a liquid drop on a hexagonal boron nitride monolayer on rhodium, by measuring dynamic contact angles in two distinct states of the solid-liquid interface: a corrugated state in the absence of hydrogen intercalation and an intercalation-induced flat state. Stiction and adhesion can be reversibly switched by applying different electrochemical potentials to the sample, causing atomic hydrogen to be intercalated or not. We ascribe the change in adhesion to a change in lateral electric field of in-plane two-nanometre dipole rings, because it cannot be explained by the change in surface roughness known from the Wenzel model. Although the change in adhesion can be calculated for the system we study, it is not yet possible to determine the stiction at such a solid-liquid interface using ab initio methods. The inorganic hybrid of hexagonal boron nitride and rhodium is very stable and represents a new class of switchable surfaces with the potential for application in the study of adhesion, friction and lubrication.

Two-nanometer voids in single-layer hexagonal boron nitride: formation via the "can-opener" effect and annihilation by self-healing.

The exposure of hexagonal boron nitride single layers to low energy ions leads to the formation of vacancy defects that are mobile at elevated temperatures. For the case of h-BN on rhodium, a superhoneycomb surface with 3 nm lattice constant (nanomesh), a concerted self-assembly of these defects is observed, where the "can-opener" effect leads to the cut-out of 2 nm "lids" and stable voids in the h-BN layer. These clean-cut voids repel each other, which enables the formation of arrays with a nearest neighbor distance down to about 8 nm. The density of voids depends on the Ar ion dose, and can reach 10(12) cm(-2). If the structures are annealed above 1000 K, the voids disappear and pristine h-BN nanomesh with larger holes is recovered. The results are obtained by scanning tunneling microscopy and density functional theory calculations.

Implantation length and thermal stability of interstitial ar atoms in boron nitride nanotents.

Hyperthermal atoms may be implanted beneath single layers of graphene or hexagonal boron nitride (h-BN) on a substrate. For the case of h-BN on rhodium, which is a corrugated honeycomb superstructure with a periodicity of 3.2 nm, Ar atoms are implanted at distinct interstitial sites within the supercell, where the h-BN is weakly bound to the substrate. These peculiar structures are reminiscent of "nanotents" with an ultimately thin "rainfly". Here we explore the implantation length (i.e., the distance the atoms move before they come to rest as interstitial defects) and the thermal stability of these atomic agglomerates above room temperature. The results are obtained by variable-temperature scanning tunneling microscopy and density functional theory calculations.

Immobilizing individual atoms beneath a corrugated single layer of boron nitride.

Single atoms, and in particular the least reactive noble gases, are difficult to immobilize at room temperature. Ion implantation into a crystal lattice has this capability, but the randomness of the involved processes does not permit much control over their distribution within the solid. Here we demonstrate that the boron nitride nanomesh, a corrugated single layer of hexagonal boron nitride (h-BN) with a 3.2 nm honeycomb superstructure formed on a Rh(111) surface, can trap individual argon atoms at distinct subsurface sites at room temperature. A kinetic energy window for implantation is identified where the argon ions can penetrate the h-BN layer but not enter the Rh lattice. Scanning tunneling microscopy and photoemission data show the presence of argon atoms at two distinct sites within the nanomesh unit cell, confirmed also by density functional theory calculations. The single atom implants are stable in air. Annealing of implanted structures to 900 K induces the formation of highly regular holes of 2 nm diameter in the h-BN layer with adjacent flakes of the same size found on top of the layer. We explain this "can-opener" effect by the presence of a vacancy defect, generated during the penetration of the Ar ion through the h-BN lattice, and propagating along the rim of a nanomesh pore where the h-BN lattice is highly bent. The reported effects are also observed in graphene on ruthenium and for neon atoms.

Second-order dipolar order in magic-angle spinning nuclear magnetic resonance.

Generating dipolar order under magic-angle spinning (MAS) conditions is explored for different pulse sequences and dipolar-coupling networks. It is shown that under MAS second-order dipolar order can be generated reliably with 10% to 30% efficiency using the Jeener-Broekaert sequence in systems where the second-order average Hamiltonian is a (near) constant of the motion. When using adiabatic demagnetization and remagnetization, second-order dipolar order can be generated and reverted back to Zeeman order with up to 60% efficiency. This requires a maximum field strength with a nutation frequency that is less than one-quarter of the rotor frequency, and that the spin system can be properly spinlocked under such conditions. A simple coherent description accounts for the principal features of the spin dynamics, even using the smallest possible system of three coupled spins. For the systems investigated, the lifetime of second-order dipolar order under MAS was found to be on the order of T(1).