Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity.

We presented an explicit empirical model of the thermal resistance of AlGaN/GaN high-electron-mobility transistors on three distinct substrates, including sapphire, SiC, and Si. This model considered both a linear and non-linear thermal resistance model of AlGaN/GaN HEMT, the thickness of the host substrate layers, and the gate length and width. The non-linear nature of channel temperature-visible at the high-power dissipation stage-along with linear dependency, was constructed within a single equation. Comparisons with the channel temperature measurement procedure (DC) and charge-control-based device modeling were performed to verify the model's validity, and the results were in favorable agreement with the observed model data, with only a 1.5% error rate compared to the measurement data. An agile expression for the channel temperature is also important for designing power devices and monolithic microwave integrated circuits. The suggested approach provides several techniques for investigation that could otherwise be impractical or unattainable when utilizing time-consuming numerical simulations.

A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors.

The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps were experimentally analyzed because the Al0.25Ga0.75N barrier layer functions as a dielectric owing to its high dielectric constant. The interface trap density Dit and border trap density Nbt were extracted from a long-channel field-effect transistor (FET), conventionally known as a FATFET structure, via frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. The minimum Dit value extracted by the conventional conductance method was 2.5 × 1012 cm-2·eV-1, which agreed well with the actual transistor subthreshold swing of around 142 mV·dec-1. The border trap density Nbt was also extracted from the frequency-dependent C-V characteristics using the distributed circuit model, and the extracted value was 1.5 × 1019 cm-3·eV-1. Low-frequency (1/f) noise measurement provided a clearer picture of the trapping-detrapping phenomena in the Al0.25Ga0.75N layer. The value of the border trap density extracted using the carrier-number-fluctuation (CNF) model was 1.3 × 1019 cm-3·eV-1, which is of a similar level to the extracted value from the distributed circuit model.

Linearity improvement of high-speed avalanche photodiodes using thin depleted absorber operating with higher order modulation format.

We present an avalanche photodiode (APD) with high-speed, high-responsivity and high-linearity operation to cope with higher order modulation format, such as pulse-amplitude modulation (PAM). A hybrid absorber configuration with thin depleted region which we newly employed successfully eliminates the space charge effect in the APD while maintaining high responsivity and operating speed. The fabricated APD shows an improved optical-input-electrical-output linearity for an optical input power over -8 dBm, and an optical receiver with this APD achieves both an error-free operation with a KP4 FEC and a high sensitivity of -17 dBm against a 28-Gbaud PAM4 signal.

Endotoxin contamination contributes to the in vitro cytokine-inducing activity of osteopontin preparations.

Recently, both native and recombinant preparations of human osteopontin (OPN) have been shown to be able to induce the production of several proinflammatory cytokines in human peripheral blood mononuclear cells (PBMCs) or purified monocytes. In the present study, we found that commercially available native and recombinant OPNs contain variable amounts of endotoxin (LPS) and that removal of endotoxin by polymyxin B-agarose column abrogated their cytokine-inducing activity. These results suggest the questionable evidence of the ability of OPN to induce several cytokines in human PBMCs and draw attention to the exquisite sensitivity of PBMCs/monocytes to endotoxin contaminants.

Microsatellite loci in Japanese quail and cross-species amplification in chicken and guinea fowl.

In line with the Gifu University's initiative to map the Japanese quail genome, a total of 100 Japanese quail microsatellite markers isolated in our laboratory were evaluated in a population of 20 unrelated quails randomly sampled from a colony of wild quail origin. Ninety-eight markers were polymorphic with an average of 3.7 alleles per locus and a mean heterozygosity of 0.423. To determine the utility of these markers for comparative genome mapping in Phasianidae, cross-species amplification of all the markers was tested with chicken and guinea fowl DNA. Amplification products similar in size to the orthologous loci in quail were observed in 42 loci in chicken and 20 loci in guinea fowl. Of the cross-reactive markers, 57.1% in chicken and 55.0% in guinea fowl were polymorphic when tested in 20 birds from their respective populations. Five of 15 markers that could cross-amplify Japanese quail, chicken, and guinea fowl DNA were polymorphic in all three species. Amplification of orthologous loci was confirmed by sequencing 10 loci each from chicken and guinea fowl and comparing with them the corresponding quail sequence. The microsatellite markers reported would serve as a useful resource base for genetic mapping in quail and comparative mapping in Phasianidae.