Electrical manipulation of telecom color centers in silicon.

Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by implementing novel lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble optical response is characterized under application of a reverse-biased DC electric field, observing both 100% modulation of fluorescence signal, and wavelength redshift of approximately 1.24 ± 0.08 GHz/V above a threshold voltage. Finally, we use G center fluorescence to directly image the electric field distribution within the devices, obtaining insight into the spatial and voltage-dependent variation of the junction depletion region and the associated mediating effects on the ensemble. Strong correlation between emitter-field coupling and generated photocurrent is observed. Our demonstration enables electrical control and stabilization of semiconductor quantum emitters.

Three-Dimensional Reconfigurable Optical Singularities in Bilayer Photonic Crystals.

Metasurfaces and photonic crystals have revolutionized classical and quantum manipulation of light and opened the door to studying various optical singularities related to phases and polarization states. However, traditional nanophotonic devices lack reconfigurability, hindering the dynamic switching and optimization of optical singularities. This paper delves into the underexplored concept of tunable bilayer photonic crystals (BPhCs), which offer rich interlayer coupling effects. Utilizing silicon nitride-based BPhCs, we demonstrate tunable bidirectional and unidirectional polarization singularities, along with spatiotemporal phase singularities. Leveraging these tunable singularities, we achieve dynamic modulation of bound-state-in-continuum states, unidirectional guided resonances, and both longitudinal and transverse orbital angular momentum. Our work paves the way for multidimensional control over polarization and phase, inspiring new directions in ultrafast optics, optoelectronics, and quantum optics.

Laser writing of spin defects in nanophotonic cavities.

High-yield engineering and characterization of cavity-emitter coupling is an outstanding challenge in developing scalable quantum network nodes. Ex situ defect formation systems prevent real-time analysis, and previous in situ methods are limited to bulk substrates or require further processing to improve the emitter properties1-6. Here we demonstrate the direct laser writing of cavity-integrated spin defects using a nanosecond pulsed above-bandgap laser. Photonic crystal cavities in 4H-silicon carbide serve as a nanoscope monitoring silicon-monovacancy defect formation within the approximately 200 nm3 cavity-mode volume. We observe spin resonance, cavity-integrated photoluminescence and excited-state lifetimes consistent with conventional defect formation methods, without the need for post-irradiation thermal annealing. We further find an exponential reduction in excited-state lifetime at fluences approaching the cavity amorphization threshold and show the single-shot annealing of intrinsic background defects at silicon-monovacancy formation sites. This real-time in situ method of localized defect formation, paired with cavity-integrated defect spins, is necessary towards engineering cavity-emitter coupling for quantum networking.

Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing.

The negatively charged silicon monovacancy [Formula: see text] in 4H silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit in solid-state quantum information applications. Photonic crystal cavities (PCCs) can augment the optical emission of the [Formula: see text], yet fine-tuning the defect-cavity interaction remains challenging. We report on two postfabrication processes that result in enhancement of the [Formula: see text] optical emission from our PCCs, an indication of improved coupling between the cavity and ensemble of silicon vacancies. Below-bandgap irradiation at 785-nm and 532-nm wavelengths carried out at times ranging from a few minutes to several hours results in stable enhancement of emission, believed to result from changing the relative ratio of [Formula: see text] ("dark state") to [Formula: see text] ("bright state"). The much faster change effected by 532-nm irradiation may result from cooperative charge-state conversion due to proximal defects. Thermal annealing at 100 °C, carried out over 20 min, also results in emission enhancements and may be explained by the relatively low-activation energy diffusion of carbon interstitials [Formula: see text], subsequently recombining with other defects to create additional [Formula: see text]s. These PCC-enabled experiments reveal insights into defect modifications and interactions within a controlled, designated volume and indicate pathways to improved defect-cavity interactions.

Imaging of surface plasmon polaritons in low-loss highly metallic titanium nitride thin films in visible and infrared regimes.

Titanium nitride (TiN) has been identified as a promising refractory material for high temperature plasmonic applications such as surface plasmon polaritons (SPPs) waveguides, lasers and light sources, and near field optics. Such SPPs are sensitive not only to the highly metallic nature of the TiN, but also to its low loss. We have formed highly metallic, low-loss TiN thin films on MgO substrates to create SPPs with resonances between 775-825 nm. Scanning near-field optical microscopy (SNOM) allowed imaging of the SPP fringes, the accurate determination of the effective wavelength of the SPP modes, and propagation lengths greater than 10 microns. Further, we show the engineering of the band structure of the plasmonic modes in TiN in the mid-IR regime and experimentally demonstrate, for the first time, the ability of TiN to support Spoof Surface Plasmon Polaritons in the mid-IR (6 microns wavelength).

Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control.

Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic techniques and a dopant-selective photoelectrochemical etch to produce suspended cavities with quality factors exceeding 5000. Subsequent coupling to a single divacancy leads to a Purcell factor of ∼50, which manifests as increased photoluminescence into the zero-phonon line and a shortened excited-state lifetime. Additionally, we measure coherent control of the divacancy ground-state spin inside the cavity nanostructure and demonstrate extended coherence through dynamical decoupling. This spin-cavity system represents an advance toward scalable long-distance entanglement protocols using silicon carbide that require the interference of indistinguishable photons from spatially separated single qubits.

A comparison of inverted and upright laser-activated titanium nitride micropyramids for intracellular delivery.

The delivery of biomolecules into cells relies on porating the plasma membrane to allow exterior molecules to enter the cell via diffusion. Various established delivery methods, including electroporation and viral techniques, come with drawbacks such as low viability or immunotoxicity, respectively. An optics-based delivery method that uses laser pulses to excite plasmonic titanium nitride (TiN) micropyramids presents an opportunity to overcome these shortcomings. This laser excitation generates localized nano-scale heating effects and bubbles, which produce transient pores in the cell membrane for payload entry. TiN is a promising plasmonic material due to its high hardness and thermal stability. In this study, two designs of TiN micropyramid arrays are constructed and tested. These designs include inverted and upright pyramid structures, each coated with a 50-nm layer of TiN. Simulation software shows that the inverted and upright designs reach temperatures of 875 °C and 307 °C, respectively, upon laser irradiation. Collectively, experimental results show that these reusable designs achieve maximum cell poration efficiency greater than 80% and viability greater than 90% when delivering calcein dye to target cells. Overall, we demonstrate that TiN microstructures are strong candidates for future use in biomedical devices for intracellular delivery and regenerative medicine.

Ultra-low-threshold InGaN/GaN quantum dot micro-ring lasers.

In this work, we demonstrate ultra-low-threshold, optically pumped, room-temperature lasing in GaN microdisk and micro-ring cavities containing InGaN quantum dots and fragmented quantum wells, with the lowest measured threshold at a record low of 6.2 µJ/cm2. When pump volume decreases, we observe a systematic decrease in the lasing threshold of micro-rings. The photon loss rate, γ, increases with increasing inner ring diameter, leading to a systematic decrease in the post-threshold slope efficiency, while the quality factor of the lasing mode remains largely unchanged. A careful analysis using finite-difference time-domain simulations attributes the increased γ to the loss of photons from lower-quality higher-order modes during amplified spontaneous emission.

Robust lanthanide emitters in polyelectrolyte thin films for photonic applications.

Trivalent lanthanides provide stable emission sources at wavelengths spanning the ultraviolet through the near infrared with uses in telecommunications, lighting, and biological sensing and imaging. We describe a method for incorporating an organometallic lanthanide complex within polyelectrolyte multilayers, producing uniform, optically active thin films on a variety of substrates. These films demonstrate excellent emission with narrow linewidths, stable over a period of months, even when bound to metal substrates. Utilizing different lanthanides such as europium and terbium, we are able to easily tune the resulting wavelength of emission of the thin film. These results demonstrate the suitability of this platform as a thin film emitter source for a variety of photonic applications such as waveguides, optical cavities, and sensors.

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center.

Point defects in silicon carbide are rapidly becoming a platform of great interest for single-photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCCs) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined.

1.55 µm band low-threshold, continuous-wave lasing from InAs/InAlGaAs quantum dot microdisks.

InAs/InAlGaAs quantum dot active layers within microcavity resonators offer the potential of ultra-low-threshold lasing in the 1.55 µm telecom window. Here, we demonstrate the first quantum dot microdisk laser with single-mode emission around 1.55 µm under continuous-wave optical pumping up to 170 K. The extracted threshold is as low as 32 µW at 77 K. This result lays the foundation of an alternative to quantum-well microlasers for low-threshold and highly compact monolithically integratable light emitting sources in fiber communication.

1.3-µm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon.

We report comparison of lasing dynamics in InAs quantum dot (QD) micro-disk lasers (MDLs) monolithically grown on V-groove patterned and planar Si (001) substrates. TEM characterizations reveal abrupt interfaces and reduced threading dislocations in the QD active regions when using the GaAs-on-V-grooved-Si template. The improved crystalline quality translates into lower threshold power in the optically pumped continuous-wave MDLs. Concurrent evaluations were also made with devices fabricated simultaneously on lattice-matched GaAs substrates. Lasing behaviors from 10 K up to room temperature have been studied systematically. The analyses spotlight insights into the optimal epitaxial scheme to achieve low-threshold lasing in telecommunication wavelengths on exact Si (001) substrates.

Nonlinear Refractory Plasmonics with Titanium Nitride Nanoantennas.

Titanium nitride (TiN) is a novel refractory plasmonic material which can sustain high temperatures and exhibits large optical nonlinearities, potentially opening the door for high-power nonlinear plasmonic applications. We fabricate TiN nanoantenna arrays with plasmonic resonances tunable in the range of about 950-1050 nm by changing the antenna length. We present second-harmonic (SH) spectroscopy of TiN nanoantenna arrays, which is analyzed using a nonlinear oscillator model with a wavelength-dependent second-order response from the material itself. Furthermore, characterization of the robustness upon strong laser illumination confirms that the TiN antennas are able to endure laser irradiation with high peak intensity up to 15 GW/cm(2) without changing their optical properties and their physical appearance. They outperform gold antennas by one order of magnitude regarding laser power sustainability. Thus, TiN nanoantennas could serve as promising candidates for high-power/high-temperature applications such as coherent nonlinear converters and local heat sources on the nanoscale.

Optically pumped 1.3 µm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon.

Direct integration of high-performance laser diodes on silicon will dramatically transform the world of photonics, expediting the progress toward low-cost and compact photonic integrated circuits (PICs) on the mainstream silicon platform. Here, we report, to the best of our knowledge, the first 1.3 µm room-temperature continuous-wave InAs quantum-dot micro-disk lasers epitaxially grown on industrial-compatible Si (001) substrates without offcut. The lasing threshold is as low as hundreds of microwatts, similar to the thresholds of identical lasers grown on a GaAs substrate. The heteroepitaxial structure employed here does not require the use of an absorptive germanium buffer and/or dislocation filter layers, both of which impede the efficient coupling of light from the laser active regions to silicon waveguides. This allows for full compatibility with the extensive silicon-on-insulator (SOI) technology. The large-area virtual GaAs (on Si) substrates can be directly adopted in various mature in-plane laser configurations, both optically and electrically. Thus, this demonstration represents a major advancement toward the commercial success of fully integrated silicon photonics.

Fabrication of High-Q Nanobeam Photonic Crystals in Epitaxially Grown 4H-SiC.

Silicon carbide (SiC) is an intriguing material due to the presence of spin-active point defects in several polytypes, including 4H-SiC. For many quantum information and sensing applications involving such point defects, it is important to couple their emission to high quality optical cavities. Here we present the fabrication of 1D nanobeam photonic crystal cavities (PCC) in 4H-SiC using a dopant-selective etch to undercut a homoepitaxially grown epilayer of p-type 4H-SiC. These are the first PCCs demonstrated in 4H-SiC and show high quality factors (Q) of up to ∼7000 as well as low modal volumes of <0.5 (λ/n)(3). We take advantage of the high device yield of this fabrication method to characterize hundreds of devices and determine which PCC geometries are optimal. Additionally, we demonstrate two methods to tune the resonant wavelengths of the PCCs over 5 nm without significant degradation of the Q. Lastly, we characterize nanobeam PCCs coupled to luminescence from silicon vacancy point defects (V1, V2) in 4H-SiC. The fundamental modes of two such PCCs are tuned into spectral overlap with the zero phonon line (ZPL) of the V2 center, resulting in an intensity increase of up to 3-fold. These results are important steps on the path to developing 4H-SiC as a platform for quantum information and sensing.

Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities.

In spite of the theoretical advantages associated with nitride microcavities, the quality factors of devices with embedded indium gallium nitride (InGaN) or gallium nitride (GaN) optical emitters still remain low. In this work we identify threading dislocations (TDs) as a major limitation to the fabrication of high quality factor devices in the nitrides. We report on the use of cathodoluminescence (CL) to identify individual TD positions within microdisk lasers containing either InGaN quantum wells or quantum dots. Using CL to accurately count the number, and map the position, of dislocations within several individual cavities, we have found a clear correlation between the density of defects in the high-field region of a microdisk and its corresponding quality factor (Q). We discuss possible mechanisms associated with defects, photon scattering, and absorption, which could be responsible for degraded device performance.

Reduced plasma-induced damage to near-surface nitrogen-vacancy centers in diamond.

Understanding plasma etch damage on near-surface nitrogen vacancy (NV) centers in diamond is essential for preserving NV emission in photonic structures and magnetometry systems. We have developed a methodology to compare the optical properties of ensemble NV centers initially 70 nm from the surface brought closer to the surface through etching with O2 plasmas in three different reactors. We employ a conventional reactive ion etcher, a barrel etcher, and a downstream etcher. We find that, irrespective of the etcher used, NV luminescence dims steadily as NVs are brought closer to the surface due to optical and surface effects. When NVs are less than 40 nm from the surface, differences in damage from the three different plasma processes affect the NV emission intensity in different ways. Diamond that is etched using the conventional etching method shows a greatly reduced NV luminescence, whereas NVs 15 nm from the surface still survive when the diamond is etched in the downstream reactor. As a result, downstream etching provides a possible alternative method for low damage etching of diamond for preservation of near surface NV properties.

Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities.

Low-threshold lasers realized within compact, high-quality optical cavities enable a variety of nanophotonics applications. Gallium nitride materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light-matter interactions and realize practical devices such as efficient light-emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low-threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we use the distinctive, high-quality (Q ∼ 5,500) modes of the cavities, and the change in the highest-intensity mode as a function of pump power to better understand the dominant radiative processes. The variations of threshold power and lasing wavelength as a function of gain medium help us identify the possible limitations to lower-threshold lasing with quantum dot active medium. In addition, we have identified a distinctive lasing signature for quantum dot materials, which consistently lase at wavelengths shorter than the peak of the room temperature gain emission. These findings not only provide better understanding of lasing in nitride-based quantum dot cavity systems but also shed insight into the more fundamental issues of light-matter coupling in such systems.

Engineered micro- and nanoscale diamonds as mobile probes for high-resolution sensing in fluid.

The nitrogen-vacancy (NV) center in diamond is an attractive platform for quantum information and sensing applications because of its room temperature operation and optical addressability. A major research effort focuses on improving the quantum coherence of this defect in engineered micro- and nanoscale diamond particles (DPs), which could prove useful for high-resolution sensing in fluidic environments. In this work we fabricate cylindrical diamonds particles with finely tuned and highly reproducible sizes (diameter and height ranging from 100 to 700 and 500 nm to 2 µm, respectively) using high-purity, single-crystal diamond membranes with shallow-doped NV centers. We show that the spin coherence time of the NV centers in these particles exceeds 700 µs, opening the possibility for the creation of ultrahigh sensitivity micro- and nanoscale sensors. Moreover, these particles can be efficiently transferred into a water suspension and delivered to the region to probe. In particular, we introduce a DP suspension inside a microfluidic circuit and control position and orientation of the particles using an optical trapping apparatus. We demonstrate a DC magnetic sensitivity of 9 µT/√Hz in fluid as well as long-term trapping stability (>30 h), which paves the way toward the use of high-sensitivity pulse techniques on contactless probes manipulated within biological settings.

Two-dimensional hybrid photonic/plasmonic crystal cavities.

We present a 2-D plasmonic crystal design with visible band-gap by combining a 2-D photonic crystal with TM band-gap and a silver surface. Simulations show that the presence of the silver surface gives rise to an expanded band-gap. A plasmonic crystal defect cavity with Q ~300 and mode volume ~1.9x10(-2) (λ/n) (3) can be formed using our design. The total Q of such a cavity is determined by both the radiative loss of the dielectric component, as well as absorption loss to the metal. We provide design criteria for the optimization of the total Q to allow high radiative or extraction efficiency.