RESUMO
Experimentally measured optical properties of photonic crystal LEDs are reported here. Photonic crystal and photonic quasi-crystal structures were fabricated on GaN epilayer LED wafer material using both direct-write electron beam lithography and nanoimprint lithography. Some of these structures were processed to make finished LEDs. Both electroluminescence and photoluminescence measurements were performed on these structures. Devices were characterized for their current-voltage characteristics, emission spectra, far-field emission pattern, and angular emission pattern. These results are useful for fabricating photonic crystal LEDs and assessing their operational properties.
RESUMO
This paper describes the formation of mono-domain highly ordered nanoporous alumina on the scale of a 2 inch diameter silicon wafer by anodization of aluminium evaporated on a patterned SiO(2) mask on a silicon substrate. The position of the ordered pores correlates with holes in the SiO(2) mask, which guide the electric field during anodization and initiates pore nucleation. The technique is suitable for the production of ordered nanoporous alumina on a wafer scale and overcomes the time, cost and scale limitations of existing processes.