Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs.

This study showcases a method for achieving high-performance yellow and red micro-LEDs through precise control of indium content within quantum wells. By employing a hybrid quantum well structure with our six core technologies, we can accomplish outstanding external quantum efficiency (EQE) and robust stripe bandwidth. The resulting 30 µm × 8 micro-LED arrays exhibit maximum EQE values of 11.56% and 5.47% for yellow and red variants, respectively. Notably, the yellow micro-LED arrays achieve data rates exceeding 1 Gbit/s for non-return-to-zero on-off keying (NRZ-OOK) format and 1.5 Gbit/s for orthogonal frequency-division multiplexing (OFDM) format. These findings underscore the significant potential of long-wavelength InGaN-based micro-LEDs, positioning them as highly promising candidates for both full-color microdisplays and visible light communication applications.

Ten-Gram-Scale Total Synthesis of the Anticancer Drug Candidate E7130 to Supply Clinical Trials.

E7130 is a novel drug candidate with an exceedingly complex chemical structure of the halichondrin class, discovered by a total synthesis approach through joint research between the Kishi group at Harvard University and Eisai. Only 18 months after completion of the initial milligram-scale synthesis, ten-gram-scale synthesis of E7130 was achieved, providing the first good manufacturing practice (GMP) batch to supply clinical trials. This paper highlights the challenges in developing ten-gram-scale synthesis from the milligram-scale synthesis.

The efficacy of right ventricular pacing for symptomatic left mid-ventricular obstruction.

The serial changes in intraventricular pressure gradient in the left ventricle and NYHA functional classification in each case. Both the left intraventricular pressure gradient and symptoms improved after right ventricular pacing. In one case, the left intraventricular pressure gradient disappeared immediately after right ventricular pacing, while in the others it disappeared during the chronic phase, more than a year later.

Simultaneous Growth Strategy of High-Optical-Efficiency GaN NWs on a Wide Range of Substrates by Pulsed Laser Deposition.

Here, we explore a catalyst-free single-step growth strategy that results in high-quality self-assembled single-crystal vertical GaN nanowires (NWs) grown on a wide range of common and novel substrates (including GaN, Ga2O3, and monolayer two-dimensional (2D) transition-metal dichalcogenide (TMD)) within the same chamber and thus under identical conditions by pulsed laser deposition. High-resolution transmission electron microscopy and scanning transmission electron microscopy (HR-STEM) and grazing incidence X-ray diffraction measurements confirm the single-crystalline nature of the obtained NWs, whereas advanced optical and cathodoluminescence measurements provide evidence of their high optical quality. Further analyses reveal that the growth is initiated by an in situ polycrystalline layer formed between the NWs and substrates during growth, while as its thickness increases, the growth mode transforms into single-crystalline NW nucleation. HR-STEM and corresponding energy-dispersive X-ray compositional analyses indicate possible growth mechanisms. All samples exhibit strong band edge UV emission (with a negligible defect band) dominated by radiative recombination with a high optical efficiency (∼65%). As all NWs have similar structural and optical qualities irrespective of the substrate used, this strategy will open new horizons for developing III-nitride-based devices.

Investigation of N-polar InGaN growth on misoriented ScAlMgO4 substrates.

We report the growth of N-polar InGaN layers on misoriented ScAlMgO4 (SAM) substrates with offset of 0.3 to 5.8° toward the m-plane. The surface of N-polar InGaN with small-offset substrates exhibited hexagonal hillocks similar to those commonly observed in N-polar GaN layers. Larger misorientation angles resulted in smoother surfaces of the InGaN layers. In contrast, the crystalline quality of InGaN indicated an opposite trend with significantly improved quality observed at smaller misorientation angles. We obtained an unprecedented crystalline quality of N-polar InGaN using SAM substrates with a 0.5° offset, which exhibited a [Formula: see text] X-ray rocking curve full width at half maximum value of 223 arcsec. The crystalline quality and surface morphology of InGaN were significantly influenced by the step surface of substrates according to atomic force microscopy observations.

Do standardization of the procedure reduce measurement variability of the sonographic anterior drawer test of the ankle?

BACKGROUND: In quantitative ankle stress sonography, different examiners use different techniques, which may cause measurement variability. This study aimed to clarify whether standardizing stress sonography techniques reduces variability in the quantitative measurement of anterior talofibular ligament length change. METHODS: Fourteen examiners with a mean ultrasound experience of 8.7 years participated in this study. Each examiner performed stress ultrasonography of the ankle using their preferred method on one patient with an intact anterior talofibular ligament (Patient 1) and on two patients with chronic ankle instability (Patient 2 and 3). Changes in the ligament length between the resting and stressed positions were determined. A consensus meeting was then conducted to standardize the sonographic technique, which was used by the examiners during a repeat stress sonography on the same patients. The variance and measured values were compared between the preferred and standardized techniques using F-tests and paired t-tests, respectively. RESULTS: At a consensus meeting, a sonographic technique in which the examiner pushed the lower leg posteriorly against the fixed foot was adopted as the standardized technique. In Patient 1, the change in the anterior talofibular ligament length was 0.4 (range, -2.3-1.3) mm and 0.6 (-0.6-1.7) mm using the preferred and standardized techniques, respectively, with no significant difference in the variance (P = 0.51) or the measured value (P = 0.52). The length changes in Patient 2 were 2.0 (0.3-4.4) mm and 1.7 (-0.9-3.8) mm using the preferred and standardized techniques, respectively. In Patient 3, the length changes were 1.4 (-2.7-7.1) mm and 0.7 (-2.0-2.3) mm. There were no significant differences between the techniques in either patient group. CONCLUSION: Variability in the quantitative measurement of ankle stress sonography was not reduced despite the standardization of the technique among examiners. Hence, comparing the measured values between different examiners should be avoided.

Broad-bandwidth and accurate optical vibration sensing by using FDM Φ-OTDR with linear regression analysis of multi-frequency phase responses.

We demonstrate Φ-OTDR distributed acoustic sensing (DAS) that realizes both a broad bandwidth for the vibration frequency and wide dynamic range for the vibration amplitude based on optical frequency-division-multiplexing (FDM). We enhance the sampling rate of DAS by using FDM while suppressing waveform distortion in time domain (spurious components in spectral domain) caused by sensor nonlinearity inherent in Φ-OTDR, thus improving dynamic range, with linear regression analysis of multi-frequency phase responses. The proposed method compares the phase offsets and responses of each frequency to those of a common reference frequency and uses the information to calibrate each of the different responses. We clarify the physical origin of the problem and the validity of the proposed method in both simulations and experiments. Experimental results show an improvement in dynamic range by above 8 dB on average for vibration waveforms with nɛ-order amplitudes and kHz-order frequencies over 10-km single-mode fiber.

Towards the quantification of the chemical mechanism of light-driven water splitting on GaN photoelectrodes.

We present results from a study addressing the unbiased water-splitting process and its side reactions on GaN-based photoelectrodes decorated with NiOx, FeOx, and CoOx nanoparticles. Observations involving physicochemical analyses of liquid and vapour phases after the experiments were performed in 1 M NaOH under ambient conditions. A water-splitting process with GaN-based photoelectrodes results in the generation of hydrogen gas and hydrogen peroxide. Quantification of the water-splitting chemical mechanism gave numerical values indicating an increase in the device performance and restriction of the GaN electrocorrosion with surface modifications of GaN structures. The hydrogen generation efficiencies are ηH2(bare GaN) = 1.23%, ηH2(NiOx/GaN) = 4.31%, ηH2(FeOx/GaN) = 2.69%, and ηH2(CoOx/GaN) = 2.31%. The photoelectrode etching reaction moieties Qetch/Q are 11.5%. 0.21%, 0.26% and 0.20% for bare GaN, NiOx/GaN, FeOx/GaN, and CoOx/GaN, respectively.

Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications.

In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

Structural and optical analyses for InGaN-based red micro-LED.

This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.

Improvement of optical properties of InGaN-based red multiple quantum wells.

The realization of red-emitting InGaN quantum well (QW) is a hot issue in current nitride semiconductor research. It has been shown that using a low-Indium (In)-content pre-well layer is an effective method to improve the crystal quality of red QWs. On the other hand, keeping uniform composition distribution at higher In content in red QWs is an urgent problem to be solved. In this work, the optical properties of blue pre-QW and red QWs with different well width and growth conditions are investigated by photoluminescence (PL). The results prove that the higher-In-content blue pre-QW is beneficial to effectively relieve the residual stress. Meanwhile, higher growth temperature and growth rate can improve the uniformity of In content and the crystal quality of red QWs, enhancing the PL emission intensity. Possible physical process of stress evolution and the model of In fluctuation in the subsequent red QW are discussed. This study provides a useful reference for the development of InGaN-based red emission materials and devices.

Efficacy and safety of pararectus approach for the treatment of acetabular fractures: A systematic review and meta-analysis.

BACKGROUND: The pararectus (PR) approach combines the advantages of the second window of the ilioinguinal approach and the medial view of the modified Stoppa approach. However, it is unclear whether the PR approach is more effective or safer than the other approaches, as few clinical studies have compared the PR approach with the other approaches. The aim of this study was to provide a systematic review and meta-analysis comparing the PR approach with the other approaches for the treatment of acetabular fractures and to answer the following question: Are the results of the PR approach superior to those of the other approaches in terms of reduction quality, operative time, operative blood loss, complications, and clinical outcomes for treatment of acetabular fractures? PATIENTS AND METHODS: A systematic literature review was conducted using relevant original studies from various databases. Pooling of data was performed using RevMan software (version 5.3, Cochrane Collaboration, Oxford, UK). A p-value<0.05 was considered to be significant. We calculated the mean differences for continuous data and odds ratio for dichotomous data with 95% confidence intervals for each outcome. Statistical heterogeneity was assessed based on I2 using the standard χ2 test. RESULTS: Five studies were included in this meta-analysis. The findings demonstrated that operative blood loss was significantly lower in the PR approach than in the other approaches (p=0.04). There was no significant difference in the rate of anatomical reduction, the operative time, the rate of complications, and the rate of excellent or good clinical score between the PR approach and the other approaches. DISCUSSION: The PR approach provided lower operative blood loss, although there was no significant difference in reduction quality, operative time, complications, and excellent or good clinical score between the PR approach and the other approaches. LEVEL OF EVIDENCE: III.

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid.

We studied the wet electrochemical etching of n-GaN films in oxalic acid. The electrooxidation processes occur in a potentiostatic mode in the voltage range of 5 to 20 V. We described the formation of the porous n-GaN layer structures in several ways. Firstly, we observed the microphotographs of the cross section to characterize the nanostructure. Secondly, we examined the reaction products in a liquid phase using ICP-OES and TOC-TN methods, while vapor-phase products were examined by gas chromatography. Finally, according to the product data analysis, we demonstrate a mechanism for the electrochemical oxidation of n-GaN in oxalic acid, which involves 6 electrons.

Study on the effect of size on InGaN red micro-LEDs.

In this research, five sizes (100 × 100, 75 × 75, 50 × 50, 25 × 25, 10 × 10 µm2) of InGaN red micro-light emitting diode (LED) dies are produced using laser-based direct writing and maskless technology. It is observed that with increasing injection current, the smaller the size of the micro-LED, the more obvious the blue shift of the emission wavelength. When the injection current is increased from 0.1 to 1 mA, the emission wavelength of the 10 × 10 µm2 micro-LED is shifted from 617.15 to 576.87 nm. The obvious blue shift is attributed to the stress release and high current density injection. Moreover, the output power density is very similar for smaller chip micro-LEDs at the same injection current density. This behavior is different from AlGaInP micro-LEDs. The sidewall defect is more easily repaired by passivation, which is similar to the behavior of blue micro-LEDs. The results indicate that the red InGaN epilayer structure provides an opportunity to realize the full color LEDs fabricated by GaN-based LEDs.

Ultra-small InGaN green micro-light-emitting diodes fabricated by selective passivation of p-GaN.

Here, we proposed fabricating ultra-small InGaN-based micro-light-emitting diodes (µLEDs). The selective p-GaN areas were intentionally passivated using a H2 plasma treatment and served as the electrical isolation regions to prevent the current from injecting into the InGaN quantum wells below. Three kinds of green µLEDs, two squircle shapes with widths of 5 and 4 µm and one circular shape with a diameter of 2.7 µm, were successfully realized. The current-voltage characteristics indicate that the series resistance and the turn-on voltage increase as the dimension of the µLED decreases. This originates from the diffusion of the hydrogen atoms into the unexpected conductive p-GaN area. The light output power density and the calculated external quantum efficiency of the µLEDs from a 5-µm-squircle to a 2.7-µm-circle were enhanced by 10-20% when compared to 98×98µm2 µLEDs that were fabricated using mesa etching.

Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays.

This study demonstrates the performance improvements of InGaN-based red light-emitting diodes (LEDs) by fabricating micro-holes in the planar mesa. The peak wavelengths of the micro-hole LEDs (MHLEDs) exhibited a blue-shift of around 3 nm compared to the planar LEDs (PLEDs) at the same current density. The lowest full width at half maximum of MHLEDs was 59 nm, which is slightly less than that of the PLEDs. The light output power and external quantum efficiency of the MHLED with a wavelength of 634 nm at 20 mA were 0.6 mW and 1.5%, which are 8.5% higher than those of the PLED.

Photoluminescence of InGaN-based red multiple quantum wells.

Optical properties of InGaN-based red LED structure, with a blue pre-well, are reported. Two emission peaks located at 445.1 nm (PB) and 617.9 nm (PR) are observed in the PL spectrum, which are induced by a low-In-content blue InGaN single quantum well (SQW) and the red InGaN double quantum wells (DQWs), respectively. The peak shift of PB with increase of excitation energy is very small, which reflects the built-in electric field of PB-related InGaN single QW is remarkably decreased, being attributed to the significant reduction of residual stress in the LED structure. On the other hand, the PR peak showed a larger shift with increase of excitation energy, due to both the screening of built-in electric field and the band filling effect. The electric field in the red wells is caused by the large lattice mismatch between high-In-content red-emitting InGaN and surrounding GaN. In addition, the anomalous temperature dependences of the PR peak are well elucidated by assuming that the red emission comes from quasi-QD structures with deep localized states. The deep localization suppresses efficiently the escape of carriers and then enhances the emission in the red, leading to high internal quantum efficiency (IQE) of 24.03%.

Investigation of InGaN-based red/green micro-light-emitting diodes.

We investigated the performance of InGaN-based red/green micro-light-emitting diodes (µLEDs) ranging from 98×98µm2 to 17×17µm2. The average forward voltage at 10A/cm2 was independent of the dimension of µLEDs. Red µLEDs exhibited a larger blueshift of the peak wavelength (∼35nm) and broader full-width at half maximum (≥50nm) at 2-50A/cm2 compared to green µLEDs. We demonstrated that 47×47µm2 red µLEDs had an on-wafer external quantum efficiency of 0.36% at the peak wavelength of 626 nm, close to the red primary color defined in the recommendation 2020 standard.

Loss measurement of each mode in few-mode fiber links with crosstalk-inducing points based on optical time domain reflectometry.

We propose a novel technique based on optical time domain reflectometry for characterizing the losses of transmission modes along few-mode fiber links. The technique estimates the transfer matrix at a crosstalk-inducing point from the measured backscattered waveforms and then eliminates the crosstalk influence of the point on the waveforms. Waveforms that are free from the crosstalk influence enable us to obtain the true losses independently of the crosstalk-inducing point. A proof-of-concept demonstration is performed on an optical fiber with a crosstalk-inducing splice and a bend, and the results show the usefulness of the proposed technique.