Flexible Organic Photovoltaic-Powered Hydrogel Bioelectronic Dressing With Biomimetic Electrical Stimulation for Healing Infected Diabetic Wounds.

Electrical stimulation (ES) is proposed as a therapeutic solution for managing chronic wounds. However, its widespread clinical adoption is limited by the requirement of additional extracorporeal devices to power ES-based wound dressings. In this study, a novel sandwich-structured photovoltaic microcurrent hydrogel dressing (PMH dressing) is designed for treating diabetic wounds. This innovative dressing comprises flexible organic photovoltaic (OPV) cells, a flexible micro-electro-mechanical systems (MEMS) electrode, and a multifunctional hydrogel serving as an electrode-tissue interface. The PMH dressing is engineered to administer ES, mimicking the physiological injury current occurring naturally in wounds when exposed to light; thus, facilitating wound healing. In vitro experiments are performed to validate the PMH dressing's exceptional biocompatibility and robust antibacterial properties. In vivo experiments and proteomic analysis reveal that the proposed PMH dressing significantly accelerates the healing of infected diabetic wounds by enhancing extracellular matrix regeneration, eliminating bacteria, regulating inflammatory responses, and modulating vascular functions. Therefore, the PMH dressing is a potent, versatile, and effective solution for diabetic wound care, paving the way for advancements in wireless ES wound dressings.

Electric Field-Tunable Giant Magnetoresistance (GMR) Sensor with Enhanced Linear Range.

The operation mechanism of giant magnetoresistance (GMR) sensors relies on the linear response of the magnetization direction to an external magnetic field. Since the magnetic anisotropy of ferromagnetic layers can be manipulated by a strain-mediated magnetoelectric coupling effect, we propose a tunable GMR magnetic field sensor design that allows for voltage tuning of the linear range and sensitivity. A spin valve structure Ru/CoFe/Cu/CoFe/IrMn/Ru is grown on a PMN-PT (011) substrate, and the magnetization directions of ferromagnetic layers can be controlled by an electric field. An adjustable linear magnetoresistance is therefore induced. Based on the magnetoelectric coupling effect and spin valve, we prepared tunable GMR magnetic field sensors with bridge structures. The linear sensing range of a DC magnetic field is enhanced 6 times by applying an electric field of 14 kV/cm. The electrically tunable GMR sensor fulfills the requirements to work at different magnetic field ranges in the same configuration, therefore exhibiting great potential for applications in the Internet of things.

Low-Voltage-Manipulating Spin Dynamics of Flexible Fe3O4 Films through Ionic Gel Gating for Wearable Devices.

Mechanical flexible electronic/spintronic devices have shown enormous application potential to impact our daily life. Here, an in situ low-voltage-controlled flexible field-effect transistor structure was exploited, which consists of a support layer (mica), functional layer (Fe3O4), and control layer (ionic gel). By applying a low voltage (1.5 V) on the ionic gel, the spin-dynamic properties of the function layer were manipulated and a reversible, nonvolatile 345 Oe ferromagnetic resonance field ( Hr) shift was achieved, which corresponds to a large magnetoelectric (ME) coefficient of 230 Oe/V. In addition, a reversible 126 Oe Hr shift (84 Oe/V) was obtained when the layers were bent at curvature radius r = 15 mm. The ME tunability could be attributed to the E-field induced ionic transformation between Fe2+ and Fe3+ at the interface via electrostatic induction. This sandwich structure shows an excellent and effective ionic gel gating system and paves the way for low-voltage-tunable, nonvolatile, and flexible spintronic devices such as memory devices, sensors, and logical devices.

Voltage Control of Two-Magnon Scattering and Induced Anomalous Magnetoelectric Coupling in Ni-Zn Ferrite.

Controlling spin dynamics through modulation of spin interactions in a fast, compact, and energy-efficient way is compelling for its abundant physical phenomena and great application potential in next-generation voltage controllable spintronic devices. In this work, we report electric field manipulation of spin dynamics-the two-magnon scattering (TMS) effect in Ni0.5Zn0.5Fe2O4 (NZFO)/Pb(Mg2/3Nb1/3)-PbTiO3 (PMN-PT) multiferroic heterostructures, which breaks the bottleneck of magnetostatic interaction-based magnetoelectric (ME) coupling in multiferroics. An alternative approach allowing spin-wave damping to be controlled by external electric field accompanied by a significant enhancement of the ME effect has been demonstrated. A two-way modulation of the TMS effect with a large magnetic anisotropy change up to 688 Oe has been obtained, referring to a 24 times ME effect enhancement at the TMS critical angle at room temperature. Furthermore, the anisotropic spin-freezing behaviors of NZFO were first determined via identifying the spatial magnetic anisotropy fluctuations. A large spin-freezing temperature change of 160 K induced by the external electric field was precisely determined by electron spin resonance.

Deterministic Switching of Perpendicular Magnetic Anisotropy by Voltage Control of Spin Reorientation Transition in (Co/Pt)3/Pb(Mg1/3Nb2/3)O3-PbTiO3 Multiferroic Heterostructures.

One of the central challenges in realizing multiferroics-based magnetoelectric memories is to switch perpendicular magnetic anisotropy (PMA) with a control voltage. In this study, we demonstrate electrical flipping of magnetization between the out-of-plane and the in-plane directions in (Co/Pt)3/(011) Pb(Mg1/3Nb2/3)O3-PbTiO3 multiferroic heterostructures through a voltage-controllable spin reorientation transition (SRT). The SRT onset temperature can be dramatically suppressed at least 200 K by applying an electric field, accompanied by a giant electric-field-induced effective magnetic anisotropy field (ΔHeff) up to 1100 Oe at 100 K. In comparison with conventional strain-mediated magnetoelastic coupling that provides a ΔHeff of only 110 Oe, that enormous effective field is mainly related to the interface effect of electric field modification of spin-orbit coupling from Co/Pt interfacial hybridization via strain. Moreover, electric field control of SRT is also achieved at room temperature, resulting in a ΔHeff of nearly 550 Oe. In addition, ferroelastically nonvolatile switching of PMA has been demonstrated in this system. E-field control of PMA and SRT in multiferroic heterostructures not only provides a platform to study strain effect and interfacial effect on magnetic anisotropy of the ultrathin ferromagnetic films but also enables the realization of power efficient PMA magnetoelectric and spintronic devices.

Controlled Phase and Tunable Magnetism in Ordered Iron Oxide Nanotube Arrays Prepared by Atomic Layer Deposition.

Highly-ordered and conformal iron oxide nanotube arrays on an atomic scale are successfully prepared by atomic layer deposition (ALD) with controlled oxidization states and tunable magnetic properties between superparamagnetism and ferrimagnetism. Non-magnetic α-Fe2O3 and superparamagnetic Fe3O4 with a blocking temperature of 120 K are in-situ obtained by finely controlling the oxidation reaction. Both of them exhibit a very small grain size of only several nanometers due to the nature of atom-by-atom growth of the ALD technique. Post-annealing α-Fe2O3 in a reducing atmosphere leads to the formation of the spinel Fe3O4 phase which displays a distinct ferrimagnetic anisotropy and the Verwey metal-insulator transition that usually takes place only in single crystal magnetite or thick epitaxial films at low temperatures. The ALD deposition of iron oxide with well-controlled phase and tunable magnetism demonstrated in this work provides a promising opportunity for the fabrication of 3D nano-devices to be used in catalysis, spintronics, microelectronics, data storages and bio-applications.

Nano-scale surface morphology evolution of Cu/Ti thin films.

This paper discusses solid-phase reaction, agglomeration and dendritic growth of Cu/Ti/Si thin films with different sublayer thickness, 70 nm Cu/20 nm Ti/Si and 20 nm Cu/70 nm Ti/Si, annealed using rapid thermal annealing (RTA) method at the temperature from 500 degrees C to 800 degrees C. The crystal structure is examined using XRD, and the surface morphology is measured by SEM and AFM. The sheet resistance is measured using four-point probe method. The dendritic patterns can be obtained in both thin films at high temperature but the density is not similar. For 70 nm Cu/20 nm Ti/Si thin films, Cu agglomerates at the annealed temperature upon to 700 degrees C and thin film is still crystalline after 800 degrees C. For 20 nm Cu/70 nm Ti/Si thin films, Cu agglomerated completely only after 500 degrees C and thin film has amorphous structure annealed after 800 degrees C.