Cation stoichiometry and electrical transport properties of the NdGaO3/(0 0 1)SrTiO3 interface.

The interface formed between two wide band-gap insulators, NdGaO3 and SrTiO3 renders metallic behavior, similar to the LaAlO3/SrTiO3 interface. The interface conductivity depends strongly upon oxygen pressure during growth of the NdGaO3 film and subsequent annealing in oxygen. The conductivity of a (10 uc) NdGaO3/SrTiO3 film, pulsed laser deposited at low (pO2 = 10(-4) mbar) oxygen pressure, vanishes after annealing at 600 °C in oxygen atmosphere. For a similar interface formed at high oxygen pressure (pO2 = 0.3 mbar), the metallic conductivity remains also after post annealing. Medium energy ion spectroscopy (MEIS) in random (non-channeling) direction showed that a substantial part of Ga is missing in films deposited at low pressure, while optimal stoichiometry is approached in films deposited at high pressure. Aligned (channeling) MEIS likewise show that the Ga/Nd ratio approaches the stoichiometric value as the pressure is increased from 10(-4) to 0.3 mbar. This is interpreted as due to gallium desorption from a growing film at high temperature and low oxygen pressure while the re-evaporation of gallium is considerably suppressed at higher pressure. We discuss the possible role of stoichiometry on electrical transport properties.

Self-doping processes between planes and chains in the metal-to-superconductor transition of YBa2Cu3O6.9.

The interplay between the quasi 1-dimensional CuO-chains and the 2-dimensional CuO2 planes of YBa(2)Cu(3)O(6+x) (YBCO) has been in focus for a long time. Although the CuO-chains are known to be important as charge reservoirs that enable superconductivity for a range of oxygen doping levels in YBCO, the understanding of the dynamics of its temperature-driven metal-superconductor transition (MST) remains a challenge. We present a combined study using x-ray absorption spectroscopy and resonant inelastic x-ray scattering (RIXS) revealing how a reconstruction of the apical O(4)-derived interplanar orbitals during the MST of optimally doped YBCO leads to substantial hole-transfer from the chains into the planes, i.e. self-doping. Our ionic model calculations show that localized divalent charge-transfer configurations are expected to be abundant in the chains of YBCO. While these indeed appear in the RIXS spectra from YBCO in the normal, metallic, state, they are largely suppressed in the superconducting state and, instead, signatures of Cu trivalent charge-transfer configurations in the planes become enhanced. In the quest for understanding the fundamental mechanism for high-Tc-superconductivity (HTSC) in perovskite cuprate materials, the observation of such an interplanar self-doping process in YBCO opens a unique novel channel for studying the dynamics of HTSC.

Optimized transport properties of LaAlO3/SrTiO3 heterointerfaces by variation of pulsed laser fluence.

We show the influence of pulsed laser deposition fluence on the transport properties of the LaAlO(3)/SrTiO(3) (LAO/STO) heterointerface. Structural characterization by x-ray diffraction and medium energy ion spectrometry enables us to deduce that the electronic behaviour is extremely sensitive to the stoichiometry of the LAO layer as well as the structural quality of the STO surface. An optimum balance of these two quantities is demonstrated for an intermediate laser fluence.

Electron backscattering diffraction and X-ray diffraction studies of interface relationships in Sr3Ru2O7/Sr2RuO4 eutectic crystals.

Sr3Ru2O7/Sr2RuO4 eutectic system is investigated by electron backscattering diffraction (EBSD) and X-ray diffraction (XRD). The eutectic growth enables the solidification of the two phases in an ordered lamellar pattern extending along the growth direction, namely the b-axis direction. The eutectic material thus provides in the a-c plane two distinct interfaces having different microstructures with respect to the growth direction. Our analysis shows that, across the inplane c-axis direction (characterized by a poor lattice matching), the b-axis orientation is not constant at the individual interfaces, showing an orientation spread of about 5°. However, across the in-plane a-axis direction (characterized by a good lattice matching), the b-axis orientation does not change within a few tenths of degree (about 0.25°). Such information at nanoscale is also verified on a macroscopic level by standard XRD investigation.

Cationic disorder and phase segregation in LaAlO3/SrTiO3 heterointerfaces evidenced by medium-energy ion spectroscopy.

Medium-energy ion spectroscopy (MEIS) has been used to study the depth profile and deduce the distribution of possible cationic substitutions in LaAlO3/SrTiO3 (LAO/STO) heterointerfaces. Analysis of La and Sr peaks in aligned and random MEIS spectra indicates that the surface layers of LAO on an STO substrate are not homogeneous and stoichiometric if the film thickness is less than 4 unit cell layers. This is possibly caused by a redistribution of La and Sr at the interface. Kelvin probe force microscopy reveals an inhomogeneous distribution of the surface potential in a 4 unit cell LAO film, indicating micrometer-sized regions of different compositions. Our findings provide a novel view on the microstructural origin of the electrically conductive interfaces.