1.
Nano Lett
; 11(11): 4520-6, 2011 Nov 09.
Artigo
em Inglês
| MEDLINE
| ID: mdl-21967002
RESUMO
We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimensions and position of each floating gate are well-defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.