"Nonperturbative Nonlinearities": Perhaps Less than Meets the Eye.

We address challenges in characterizing changes in permittivity and refractive index beyond standard perturbative methods with special attention given to transparent conductive oxides (TCOs). We unveil a realistic limit to permittivity changes under high optical power densities. Our study covers both slow and ultrafast nonlinearities, demonstrating that all nonlinearities induce refractive index changes accurately described by a simple curve with saturation electric field (or irradiance) and maximum change of permittivity at saturation. Our model, grounded in material properties, like oscillator strength and characteristic times, offers a robust framework for understanding and predicting nonlinear optical phenomena in TCOs and other materials. We differentiate between the significance of higher-order nonlinear susceptibilities in ultrafast and slow nonlinear scenarios. We aim to provide valuable insights for researchers exploring strong light-matter interaction.

Broadband near-infrared emission in silicon waveguides.

Silicon photonic integrated circuit foundries enable wafer-level fabrication of entire electro-optic systems-on-a-chip for applications ranging from datacommunication to lidar to chemical sensing. However, silicon's indirect bandgap has so far prevented its use as an on-chip optical source for these systems. Here, we describe a fullyintegrated broadband silicon waveguide light source fabricated in a state-of-the-art 300-mm foundry. A reverse-biased p-i-n diode in a silicon waveguide emits broadband near-infrared optical radiation directly into the waveguide mode, resulting in nanowatts of guided optical power from a few milliamps of electrical current. We develop a one-dimensional Planck radiation model for intraband emission from hot carriers to theoretically describe the emission. The brightness of this radiation is demonstrated by using it for broadband characterization of photonic components including Mach-Zehnder interferometers and lattice filters, and for waveguide infrared absorption spectroscopy of liquid-phase analytes. This broadband silicon-based source can be directly integrated with waveguides and photodetectors with no change to existing foundry processes and is expected to find immediate application in optical systems-on-a-chip for metrology, spectroscopy, and sensing.

589†nm yellow laser pumped Kerr-lens mode-locked Alexandrite laser producing sub-50†fs pulses.

We report a femtosecond Kerr-lens mode-locked (KLM) Alexandrite laser resonantly pumped by a 589 nm yellow laser. The 4 nJ pulses as short as 42 fs were obtained corresponding to a peak power of 100 kW. With the repetition rate of 104 MHz, the average power of 420 mW was attained. The time-bandwidth product of generated laser pulse was measured to be 0.324 with a beam quality factor of M2 ≤ 1.13. The exceptional performance of visible femtosecond laser may find potential applications in various fields.

Nanoporous antireflection coating for high-temperature applications in the infrared.

Antireflection (AR) coatings are essential to the performance of optical systems; without them, surface reflections increase significantly at steep angles and become detrimental to the functionality. AR coatings apply to a wide range of applications from solar cells and laser optics to optical windows. Many times, operational conditions include high temperatures and steep angles of incidence (AOIs). The implementation of AR coatings is extremely challenging in these conditions. Nanoporous coatings made from high-temperature-tolerant materials offer a solution to this problem. The careful selection of materials is needed to prevent delamination when exposed to high temperatures, and an optimal optical design is needed to lower surface reflections at both the normal incidence and steep AOIs. This paper presents nanoporous silicon dioxide and hafnium dioxide coatings deposited on a sapphire substrate using oblique angle deposition by electron beam evaporation, a highly accurate deposition technique for thin films. Developed coatings were tested in a controlled temperature environment and demonstrated thermal stability at temperatures up to 800°C. Additional testing at room temperature demonstrated the reduction of power reflections near optimal for AOIs up to 70° for a design wavelength of 1550 nm. These findings are promising to help extend the operation of technology at extreme temperatures and steep angles.

450†W pulsed laser system with M2 < 1.2 based on a 969-nm laser diode end-pumped Yb:YAG rod amplifier.

We demonstrated a compact and power-efficient multi-stage pulsed end-pumped amplifier with stabilized output power of 450 W and near-diffraction-limited beam quality (M2 < 1.2) at a repetition rate of 1 MHz. The pulsed amplifier produced an exceptional average power and optimal beam quality achieved in laser diode (LD) end-pumped Yb:YAG thin rod configuration at room temperature. A preliminary pulse compression with a chirped volume Bragg grating (CVBG) was performed reducing pulse duration to ∼730 fs at a compression efficiency of 90%. With the combined features, including compactness, reliability, and efficiency, of the end-pumped scheme, the demonstrated laser system would be of great value in both industry and scientific research.

Watt-level tunable Ti:Sapphire laser directly pumped with green laser diodes.

We demonstrate a Ti:Sapphire laser generating in excess of 1.2 W in continuous-wave operation when pumped directly with four green laser diodes eliminating the need for a complex pump laser. As a result, improvement of laser efficiency is achieved without sacrificing beam quality. Tunability within the range of 740-840 nm is attained validating the concept of a direct laser-diode pumped Ti:Sapphire laser.