Van der Waals Epitaxy of Weyl-Semimetal Td-WTe2.

Epitaxial growth of WTe2 offers significant advantages, including the production of high-quality films, possible long-range in-plane ordering, and precise control over layer thicknesses. However, the mean island size of WTe2 grown by molecular beam epitaxy (MBE) in the literature is only a few tens of nanometers, which is not suitable for the implementation of devices at large lateral scales. Here we report the growth of Td -WTe2 ultrathin films by MBE on monolayer (ML) graphene, reaching a mean flake size of ≃110 nm, which is, on overage, more than three times larger than previous results. WTe2 films thicker than 5 nm have been successfully synthesized and exhibit the expected Td phase atomic structure. We rationalize the epitaxial growth of Td-WTe2 and propose a simple model to estimate the mean flake size as a function of growth parameters that can be applied to other transition metal dichalcogenides (TMDCs). Based on nucleation theory and the Kolmogorov-Johnson-Meh-Avrami (KJMA) equation, our analytical model supports experimental data showing a critical coverage of 0.13 ML above which WTe2 nucleation becomes negligible. The quality of monolayer WTe2 films is demonstrated by electronic band structure analysis using angle-resolved photoemission spectroscopy (ARPES), which is in agreement with first-principles calculations performed on free-standing WTe2 and previous reports. We found electron pockets at the Fermi level, indicating a n-type doping of WTe2 with an electron density of n = 2.0 ± 0.5 × 1012 cm-2 for each electron pocket.

An unexpected organometallic intermediate in surface-confined Ullmann coupling.

Ullmann coupling or, more generally, dehalogenative aryl-aryl coupling, is one of the most widely exploited chemical reactions to obtain one- and two-dimensional polymers on metal surfaces. It is generally described as a two-step reaction: (i) dehalogenation, resulting in the formation of a stable intermediate organometallic phase and subsequent (ii) C-C coupling. The topology of the resulting polymer depends on the number and positions of the halogen atoms in the haloaromatic precursor, although its orientation and order are determined by the structure of the intermediate phase. Hitherto, only one intermediate structure, identified as an organometallic (OM) phase, has been reported for such a reaction. Here we demonstrate the formation of two distinct OM phases during the temperature-induced growth of poly(para-phenylene) from 1,4-dibromobenzene precursors on Cu(110). Beyond the already known linear-OM chains, we show that a phase reorganization to a chessboard-like 2D-OM can be activated in a well-defined temperature range. This new intermediate phase, revealed only when the reaction is carried out at low molecular coverages, was characterized by X-ray photoelectron spectroscopy, scanning tunneling microscopy and near-edge X-ray absorption fine structure spectroscopy, and modeled by density functional theory calculations. Our data show that the 2D-OM remains stable after cooling down the sample and is stabilized by four-Cu clusters at each node. The observation of such unexpected intermediate phase shows the complexity of the mechanisms underlying on-surface synthesis and broadens the understanding of Ullmann coupling, which continues to be astonishing despite its extensive use.

Electronic Band Structure of Ultimately Thin Silicon Oxide on Ru(0001).

Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately thin version of a dielectric host material for two-dimensional materials and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, we establish the existence of two sublattices defined by metal-oxygen-silicon bridges involving inequivalent substrate sites. We further discover four electronic bands below the Fermi level, at high binding energy, two of them having a linear dispersion at their crossing K point (Dirac cones) and two others forming semiflat bands. While the latter two correspond to hybridized states between the oxide and the metal, the former relate to the topmost silicon-oxygen plane, which is not directly coupled to the substrate. Our analysis is based on high-resolution X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and density functional theory calculations.

Tuning the Kondo resonance in two-dimensional lattices of cerium molecular complexes.

Cerium intermetallics have raised a lot of interest for the past forty years thanks to their very unusual and interesting electronic and magnetic properties. This can be explained by the peculiar electronic configuration of Ce (4f1) that allows different oxidation states leading to singular behavior such as quantum phase transitions, heavy-fermion behavior and the Kondo effect. In this work, we used a mixed-valence molecular analogue to study the Kondo effect down to the atomic scale by means of scanning tunneling microscopy/spectroscopy (STM/STS) for which new many-body effects are expected to emerge due to reduced dimensionality and specific chemical environment of the 4f-ion. For that purpose, double-decker molecular complexes hosting a Ce ion were synthesized and adsorbed onto Ag and Cu (111) surfaces forming two-dimensional lattices. As a result, we observed a zero-bias conductance resonance on Ag only indicative of a Kondo effect arising from the coupling between a molecular spin and the conducting electrons of the metallic surface. The emergence of the Kondo effect is discussed in terms of intermolecular and molecule/substrate interactions. This work expands the little knowledge to date on the structural and related electronic properties of Ce-based molecular systems on surfaces. In particular, it shows that Ce-based double deckers are good platforms to obtain insight into 4f-induced many-body effects down to the nanometer scale and in two-dimensional lattices. Moreover, this outcome has a strong impact for future applications of molecular devices in which both metals are commonly used as electrical contacts.

Quasi one-dimensional band dispersion and surface metallization in long-range ordered polymeric wires.

On-surface covalent self-assembly of organic molecules is a very promising bottom-up approach for producing atomically controlled nanostructures. Due to their highly tuneable properties, these structures may be used as building blocks in electronic carbon-based molecular devices. Following this idea, here we report on the electronic structure of an ordered array of poly(para-phenylene) nanowires produced by surface-catalysed dehalogenative reaction. By scanning tunnelling spectroscopy we follow the quantization of unoccupied molecular states as a function of oligomer length, with Fermi level crossing observed for long chains. Angle-resolved photoelectron spectroscopy reveals a quasi-1D valence band as well as a direct gap of 1.15 eV, as the conduction band is partially filled through adsorption on the surface. Tight-binding modelling and ab initio density functional theory calculations lead to a full description of the band structure, including the gap size and charge transfer mechanisms, highlighting a strong substrate-molecule interaction that drives the system into a metallic behaviour.

Nanopatterning the electronic properties of gold surfaces with self-organized superlattices of metallic nanostructures.

The self-organized growth of nanostructures on surfaces could offer many advantages in the development of new catalysts, electronic devices and magnetic data-storage media. The local density of electronic states on the surface at the relevant energy scale strongly influences chemical reactivity, as does the shape of the nanoparticles. The electronic properties of surfaces also influence the growth and decay of nanostructures such as dimers, chains and superlattices of atoms or noble metal islands. Controlling these properties on length scales shorter than the diffusion lengths of the electrons and spins (some tens of nanometres for metals) is a major goal in electronics and spintronics. However, to date, there have been few studies of the electronic properties of self-organized nanostructures. Here we report the self-organized growth of macroscopic superlattices of Ag or Cu nanostructures on Au vicinal surfaces, and demonstrate that the electronic properties of these systems depend on the balance between the confinement and the perturbation of the surface states caused by the steps and the nanostructures' superlattice. We also show that the local density of states can be modified in a controlled way by adjusting simple parameters such as the type of metal deposited and the degree of coverage.