Mechanically induced correlated errors on superconducting qubits with relaxation times exceeding 0.4 ms.

Superconducting qubits are among the most advanced candidates for achieving fault-tolerant quantum computing. Despite recent significant advancements in the qubit lifetimes, the origin of the loss mechanism for state-of-the-art qubits is still subject to investigation. Furthermore, the successful implementation of quantum error correction requires negligible correlated errors between qubits. Here, we realize long-lived superconducting transmon qubits that exhibit fluctuating lifetimes, averaging 0.2 ms and exceeding 0.4 ms - corresponding to quality factors above 5 million and 10 million, respectively. We then investigate their dominant error mechanism. By introducing novel time-resolved error measurements that are synchronized with the operation of the pulse tube cooler in a dilution refrigerator, we find that mechanical vibrations from the pulse tube induce nonequilibrium dynamics in highly coherent qubits, leading to their correlated bit-flip errors. Our findings not only deepen our understanding of the qubit error mechanisms but also provide valuable insights into potential error-mitigation strategies for achieving fault tolerance by decoupling superconducting qubits from their mechanical environments.

Lithium tantalate photonic integrated circuits for volume manufacturing.

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal-oxide-semiconductor voltage levels3 to be used in applications including data-centre communications4, high-performance computing and photonic accelerators for AI5. However, industrial use of this technology is hindered by the high cost per wafer and the limited wafer size. The high cost results from the lack of existing high-volume applications in other domains of the sort that accelerated the adoption of silicon-on-insulator (SOI) photonics, which was driven by vast investment in microelectronics. Here we report low-loss PICs made of lithium tantalate (LiTaO3), a material that has already been adopted commercially for 5G radiofrequency filters6 and therefore enables scalable manufacturing at low cost, and it has equal, and in some cases superior, properties to LiNbO3. We show that LiTaO3 can be etched to create low-loss (5.6 dB m-1) PICs using a deep ultraviolet (DUV) stepper-based manufacturing process7. We demonstrate a LiTaO3 Mach-Zehnder modulator (MZM) with a half-wave voltage-length product of 1.9 V cm and an electro-optic bandwidth of up to 40 GHz. In comparison with LiNbO3, LiTaO3 exhibits a much lower birefringence, enabling high-density circuits and broadband operation over all telecommunication bands. Moreover, the platform supports the generation of soliton microcombs. Our work paves the way for the scalable manufacture of low-cost and large-volume next-generation electro-optical PICs.

Photonic-electronic integrated circuit-based coherent LiDAR engine.

Chip-scale integration is a key enabler for the deployment of photonic technologies. Coherent laser ranging or FMCW LiDAR, a perception technology that benefits from instantaneous velocity and distance detection, eye-safe operation, long-range, and immunity to interference. However, wafer-scale integration of these systems has been challenged by stringent requirements on laser coherence, frequency agility, and the necessity for optical amplifiers. Here, we demonstrate a photonic-electronic LiDAR source composed of a micro-electronic-based high-voltage arbitrary waveform generator, a hybrid photonic circuit-based tunable Vernier laser with piezoelectric actuators, and an erbium-doped waveguide amplifier. Importantly, all systems are realized in a wafer-scale manufacturing-compatible process comprising III-V semiconductors, silicon nitride photonic integrated circuits, and 130-nm SiGe bipolar complementary metal-oxide-semiconductor (CMOS) technology. We conducted ranging experiments at a 10-meter distance with a precision level of 10 cm and a 50 kHz acquisition rate. The laser source is turnkey and linearization-free, and it can be seamlessly integrated with existing focal plane and optical phased array LiDAR approaches.

Room-temperature quantum optomechanics using an ultralow noise cavity.

At room temperature, mechanical motion driven by the quantum backaction of light has been observed only in pioneering experiments in which an optical restoring force controls the oscillator stiffness1,2. For solid-state mechanical resonators in which oscillations are controlled by the material rigidity, the observation of these effects has been hindered by low mechanical quality factors, optical cavity frequency fluctuations3, thermal intermodulation noise4,5 and photothermal instabilities. Here we overcome these challenges with a phononic-engineered membrane-in-the-middle system. By using phononic-crystal-patterned cavity mirrors, we reduce the cavity frequency noise by more than 700-fold. In this ultralow noise cavity, we insert a membrane resonator with high thermal conductance and a quality factor (Q) of 180 million, engineered using recently developed soft-clamping techniques6,7. These advances enable the operation of the system within a factor of 2.5 of the Heisenberg limit for displacement sensing8, leading to the squeezing of the probe laser by 1.09(1) dB below the vacuum fluctuations. Moreover, the long thermal decoherence time of the membrane oscillator (30 vibrational periods) enables us to prepare conditional displaced thermal states of motion with an occupation of 0.97(2) phonons using a multimode Kalman filter. Our work extends the quantum control of solid-state macroscopic oscillators to room temperature.

Free-electron interaction with nonlinear optical states in microresonators.

The short de Broglie wavelength and strong interaction empower free electrons to probe structures and excitations in materials and biomolecules. Recently, electron-photon interactions have enabled new optical manipulation schemes for electron beams. In this work, we demonstrate the interaction of electrons with nonlinear optical states inside a photonic chip-based microresonator. Optical parametric processes give rise to spatiotemporal pattern formation corresponding to coherent or incoherent optical frequency combs. We couple such "microcombs" to electron beams, demonstrate their fingerprints in the electron spectra, and achieve ultrafast temporal gating of the electron beam. Our work demonstrates the ability to access solitons inside an electron microscope and extends the use of microcombs to spatiotemporal control of electrons for imaging and spectroscopy.

Towards efficient broadband parametric conversion in ultra-long Si3N4 waveguides.

Broadband continuous-wave parametric gain and efficient wavelength conversion is an important functionality to bring on-chip. Recently, meter-long silicon nitride waveguides have been utilized to obtain continuous-traveling-wave parametric gain, establishing the great potential of photonic-integrated-circuit-based parametric amplifiers. However, the effect of spiral structure on the performance and achievable bandwidth of such devices have not yet been studied. In this work, we investigate the efficiency-bandwidth performance in up to 2 meter-long waveguides engineered for broadband operation. Moreover, we analyze the conversion efficiency fluctuations that have been observed in meter-long Si3N4 waveguides and study the use of temperature control to limit the fluctuations.

A chip-scale second-harmonic source via self-injection-locked all-optical poling.

Second-harmonic generation allows for coherently bridging distant regions of the optical spectrum, with applications ranging from laser technology to self-referencing of frequency combs. However, accessing the nonlinear response of a medium typically requires high-power bulk sources, specific nonlinear crystals, and complex optical setups, hindering the path toward large-scale integration. Here we address all of these issues by engineering a chip-scale second-harmonic (SH) source based on the frequency doubling of a semiconductor laser self-injection-locked to a silicon nitride microresonator. The injection-locking mechanism, combined with a high-Q microresonator, results in an ultra-narrow intrinsic linewidth at the fundamental harmonic frequency as small as 41 Hz. Owing to the extreme resonant field enhancement, quasi-phase-matched second-order nonlinearity is photoinduced through the coherent photogalvanic effect and the high coherence is mapped on the generated SH field. We show how such optical poling technique can be engineered to provide efficient SH generation across the whole C and L telecom bands, in a reconfigurable fashion, overcoming the need for poling electrodes. Our device operates with milliwatt-level pumping and outputs SH power exceeding 2 mW, for an efficiency as high as 280%/W under electrical driving. Our findings suggest that standalone, highly-coherent, and efficient SH sources can be integrated in current silicon nitride photonics, unlocking the potential of χ(2) processes in the next generation of integrated photonic devices.

Space-time wave packets with reduced divergence and tunable group velocity generated in free space after multi-mode fiber propagation.

Previously, space-time wave packets (STWPs) have been generated in free space with reduced diffraction and a tunable group velocity by combining multiple frequency comb lines each carrying a single Bessel mode with a unique wave number. It might be potentially desirable to propagate the STWP through fiber for reconfigurable positioning. However, fiber mode coupling might degrade the output STWP and distort its propagation characteristics. In this Letter, we experimentally demonstrate STWP generation and propagation over 1-m graded-index multi-mode fiber. Fiber mode coupling is mitigated by pre-distortion according to the inverse matrix of the fiber mode coupling matrix. Measurement of the STWP at the fiber output shows that its group velocity can vary from 1.0042c to 0.9967c by tuning the wave number of the Bessel mode on each frequency. The measured time-averaged intensity profiles show that the beam radius remains similar after 150-mm free-space propagation after exiting the fiber.

High density lithium niobate photonic integrated circuits.

Photonic integrated circuits have the potential to pervade into multiple applications traditionally limited to bulk optics. Of particular interest for new applications are ferroelectrics such as Lithium Niobate, which exhibit a large Pockels effect, but are difficult to process via dry etching. Here we demonstrate that diamond-like carbon (DLC) is a superior material for the manufacturing of photonic integrated circuits based on ferroelectrics, specifically LiNbO3. Using DLC as a hard mask, we demonstrate the fabrication of deeply etched, tightly confining, low loss waveguides with losses as low as 4 dB/m. In contrast to widely employed ridge waveguides, this approach benefits from a more than one order of magnitude higher area integration density while maintaining efficient electro-optical modulation, low loss, and offering a route for efficient optical fiber interfaces. As a proof of concept, we demonstrate a III-V/LiNbO3 based laser with sub-kHz intrinsic linewidth and tuning rate of 0.7 PHz/s with excellent linearity and CMOS-compatible driving voltage. We also demonstrated a MZM modulator with a 1.73 cm length and a halfwave voltage of 1.94 V.

A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform.

The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices. Yet to date, LiNbO3 photonic integrated circuits have mostly been fabricated using non-standard etching techniques and partially etched waveguides, that lack the reproducibility achieved in silicon photonics. Widespread application of thin-film LiNbO3 requires a reliable solution with precise lithographic control. Here we demonstrate a heterogeneously integrated LiNbO3 photonic platform employing wafer-scale bonding of thin-film LiNbO3 to silicon nitride (Si3N4) photonic integrated circuits. The platform maintains the low propagation loss (<0.1 dB/cm) and efficient fiber-to-chip coupling (<2.5 dB per facet) of the Si3N4 waveguides and provides a link between passive Si3N4 circuits and electro-optic components with adiabatic mode converters experiencing insertion losses below 0.1 dB. Using this approach we demonstrate several key applications, thus providing a scalable, foundry-ready solution to complex LiNbO3 integrated photonic circuits.

Single-frequency violet and blue laser emission from AlGaInN photonic integrated circuit chips.

Chip-based, single-frequency and low phase-noise integrated photonic laser diodes emitting in the violet (412 nm) and blue (461 nm) regime are demonstrated. The GaN-based edge-emitting laser diodes were coupled to high-quality on-chip micro-resonators for optical feedback and mode selection resulting in laser self-injection locking with narrow emission linewidth. Multiple group III-nitride (III-N) based photonic integrated circuit chips with different waveguide designs including single-crystalline AlN, AlGaN, and GaN were developed and characterized. Single-frequency laser operation was demonstrated for all studied waveguide core materials. The best side-mode suppression ratio was determined to be ∼36 dB at 412 nm with a single-frequency laser emission linewidth of only 3.8 MHz at 461 nm. The performance metrics of this novel, to the best of our knowledge, type of laser suggest potential implementation in next-generation, portable quantum systems.

Ultrafast tunable lasers using lithium niobate integrated photonics.

Early works1 and recent advances in thin-film lithium niobate (LiNbO3) on insulator have enabled low-loss photonic integrated circuits2,3, modulators with improved half-wave voltage4,5, electro-optic frequency combs6 and on-chip electro-optic devices, with applications ranging from microwave photonics to microwave-to-optical quantum interfaces7. Although recent advances have demonstrated tunable integrated lasers based on LiNbO3 (refs. 8,9), the full potential of this platform to demonstrate frequency-agile, narrow-linewidth integrated lasers has not been achieved. Here we report such a laser with a fast tuning rate based on a hybrid silicon nitride (Si3N4)-LiNbO3 photonic platform and demonstrate its use for coherent laser ranging. Our platform is based on heterogeneous integration of ultralow-loss Si3N4 photonic integrated circuits with thin-film LiNbO3 through direct bonding at the wafer level, in contrast to previously demonstrated chiplet-level integration10, featuring low propagation loss of 8.5 decibels per metre, enabling narrow-linewidth lasing (intrinsic linewidth of 3 kilohertz) by self-injection locking to a laser diode. The hybrid mode of the resonator allows electro-optic laser frequency tuning at a speed of 12 × 1015 hertz per second with high linearity and low hysteresis while retaining the narrow linewidth. Using a hybrid integrated laser, we perform a proof-of-concept coherent optical ranging (FMCW LiDAR) experiment. Endowing Si3N4 photonic integrated circuits with LiNbO3 creates a platform that combines the individual advantages of thin-film LiNbO3 with those of Si3N4, which show precise lithographic control, mature manufacturing and ultralow loss11,12.

Architecture for integrated RF photonic downconversion of electronic signals.

Electronic analog to digital converters (ADCs) are running up against the well-known bit depth versus bandwidth trade off. Towards this end, radio frequency (RF) photonic-enhanced ADCs have been the subject of interest for some time. Optical frequency comb technology has been used as a workhorse underlying many of these architectures. Unfortunately, such designs must generally grapple with size, weight, and power (SWaP) concerns, as well as frequency ambiguity issues which threaten to obscure critical spectral information of detected RF signals. In this work, we address these concerns via an RF photonic downconverter with potential for easy integration and field deployment by leveraging a novel, to the best of our knowledge, hybrid microcomb/electro-optic comb design.

Generation of OAM-carrying space-time wave packets with time-dependent beam radii using a coherent combination of multiple LG modes on multiple frequencies.

Space-time (ST) wave packets, in which spatial and temporal characteristics are coupled, have gained attention due to their unique propagation characteristics, such as propagation invariance and tunable group velocity in addition to their potential ability to carry orbital angular momentum (OAM). Through experiment and simulation, we explore the generation of OAM-carrying ST wave packets, with the unique property of a time-dependent beam radius at various ranges of propagation distances. To achieve this, we synthesize multiple frequency comb lines, each assigned to a coherent combination of multiple Laguerre-Gaussian (LGℓ,p) modes with the same azimuthal index but different radial indices. The time-dependent interference among the spatial modes at the different frequencies leads to the generation of the desired OAM-carrying ST wave packet with dynamically varying radii. The simulation results indicate that the dynamic range of beam radius oscillations increases with the number of modes and frequency lines. The simulated ST wave packet for OAM of orders +1 or +3 has an OAM purity of >95%. In addition, we experimentally generate and measure the OAM-carrying ST wave packets with time-dependent beam radii. In the experiment, several lines of a Kerr frequency comb are spatially modulated with the superposition of multiple LG modes and combined to generate such an ST wave packet. In the experiment, ST wave packets for OAM of orders +1 or +3 have an OAM purity of >64%. In simulation and experiment, OAM purity decreases and beam radius becomes larger over the propagation.

Photo-induced cascaded harmonic and comb generation in silicon nitride microresonators.

Silicon nitride (Si3N4) is an ever-maturing integrated platform for nonlinear optics but mostly considered for third-order [χ(3)] nonlinear interactions. Recently, second-order [χ(2)] nonlinearity was introduced into Si3N4 via the photogalvanic effect, resulting in the inscription of quasi-phase-matched χ(2) gratings. However, the full potential of the photogalvanic effect in microresonators remains largely unexplored for cascaded effects. Here, we report combined χ(2) and χ(3) nonlinear effects in a normal dispersion Si3N4 microresonator. We demonstrate that the photo-induced χ(2) grating also provides phase-matching for the sum-frequency generation process, enabling the initiation and successive switching of primary combs. In addition, the doubly resonant pump and second-harmonic fields allow for effective third-harmonic generation, where a secondary optically written χ(2) grating is identified. Last, we reach a broadband microcomb state evolved from the sum-frequency-coupled primary comb. These results expand the scope of cascaded effects in microresonators.

Topological lattices realized in superconducting circuit optomechanics.

Cavity optomechanics enables the control of mechanical motion through the radiation-pressure interaction1, and has contributed to the quantum control of engineered mechanical systems ranging from kilogramme-scale Laser Interferometer Gravitational-wave Observatory (LIGO) mirrors to nanomechanical systems, enabling ground-state preparation2,3, entanglement4,5, squeezing of mechanical objects6, position measurements at the standard quantum limit7 and quantum transduction8. Yet nearly all previous schemes have used single- or few-mode optomechanical systems. By contrast, new dynamics and applications are expected when using optomechanical lattices9, which enable the synthesis of non-trivial band structures, and these lattices have been actively studied in the field of circuit quantum electrodynamics10. Superconducting microwave optomechanical circuits2 are a promising platform to implement such lattices, but have been compounded by strict scaling limitations. Here we overcome this challenge and demonstrate topological microwave modes in one-dimensional circuit optomechanical chains realizing the Su-Schrieffer-Heeger model11,12. Furthermore, we realize the strained graphene model13,14 in a two-dimensional optomechanical honeycomb lattice. Exploiting the embedded optomechanical interaction, we show that it is possible to directly measure the mode functions of the hybridized modes without using any local probe15,16. This enables us to reconstruct the full underlying lattice Hamiltonian and directly measure the existing residual disorder. Such optomechanical lattices, accompanied by the measurement techniques introduced, offer an avenue to explore collective17,18, quantum many-body19 and quench20 dynamics, topological properties9,21 and, more broadly, emergent nonlinear dynamics in complex optomechanical systems with a large number of degrees of freedom22-24.

A photonic integrated continuous-travelling-wave parametric amplifier.

The ability to amplify optical signals is of pivotal importance across science and technology typically using rare-earth-doped fibres or gain media based on III-V semiconductors. A different physical process to amplify optical signals is to use the Kerr nonlinearity of optical fibres through parametric interactions1,2. Pioneering work demonstrated continuous-wave net-gain travelling-wave parametric amplification in fibres3, enabling, for example, phase-sensitive (that is, noiseless) amplification4, link span increase5, signal regeneration and nonlinear phase noise mitigation6. Despite great progress7-15, all photonic integrated circuit-based demonstrations of net parametric gain have necessitated pulsed lasers, limiting their practical use. Until now, only bulk micromachined periodically poled lithium niobate (PPLN) waveguide chips have achieved continuous-wave gain16,17, yet their integration with silicon-wafer-based photonic circuits has not been shown. Here we demonstrate a photonic-integrated-circuit-based travelling-wave optical parametric amplifier with net signal gain in the continuous-wave regime. Using ultralow-loss, dispersion-engineered, metre-long, Si3N4 photonic integrated circuits18 on a silicon chip of dimensions 5 × 5 mm2, we achieve a continuous parametric gain of 12 dB that exceeds both the on-chip optical propagation loss and fibre-chip-fibre coupling losses in the telecommunication C band. Our work demonstrates the potential of photonic-integrated-circuit-based parametric amplifiers that have lithographically controlled gain spectrum, compact footprint, resilience to optical feedback and quantum-limited performance, and can operate in the wavelength ranges from visible to mid-infrared and outside conventional rare-earth amplification bands.