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Opt Express ; 19(22): 21692-7, 2011 Oct 24.
Artigo em Inglês | MEDLINE | ID: mdl-22109019

RESUMO

The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire/p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto pre-patterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure light-emitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction.


Assuntos
Gálio/química , Luz , Nanofios/química , Óptica e Fotônica , Silício/química , Microscopia , Análise Espectral
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