Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD.

Silicon nitride, silicon oxide, and silicon oxynitride thin films were deposited on the Si substrate by inductively coupled plasma chemical vapor deposition and annealed at 1100 °C for 3 min in an Ar environment. Silicon nitride and silicon oxide films deposited at ratios of the reactant flow rates of SiH4/N2 = 1.875 and SiH4/N2O = 3, respectively, were Si-rich, while Si excess for the oxynitride film (SiH4/N2/N2O = 3:2:2) was not found. Annealing resulted in a thickness decrease and structural transformation for SiOx and SiNx films. Nanocrystalline phases of Si as well as α- and ß-Si3N4 were found in the annealed silicon nitride film. Compared to oxide and nitride films, the oxynitride film is the least susceptible to change during annealing. The relationship between the structure, composition, and optical properties of the Si-based films has been revealed. It has been shown that the calculated optical parameters (refractive index, extinction coefficient) reflect structural peculiarities of the as-deposited and annealed films.

Nanostructured TiAlCuN and TiAlCuCN coatings for spacecraft: effects of reactive magnetron deposition regimes and compositions.

Spacecraft are exposed to a number of factors in the outer space: irradiation by electron flows, high-energy ions, solar electromagnetic radiation, plasma irradiation, and a stream of meteorite particles. All these factors initiate various physical and chemical processes in spacecraft materials, which can eventually lead to failure. To ensure reliable operation of spacecraft, it is necessary to use protective coatings and special radiation-resistant materials. TiAlCuN and TiAlCuCN coatings were formed by reactive magnetron sputtering on different substrates: single-crystal silicon and Titanium Grade 2 wafers. Nitrogen was used as a reactive gas to form nitride coatings and acetylene was used to form carbonitride coatings. The elemental composition was studied by energy-dispersive X-ray (EDX) spectroscopy. The structural-phase state of the coatings was examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Mechanical properties, such as hardness and Young modulus, were investigated by nanoindentation using a CSM Instruments Nanohardness Tester NHT2. The influence of deposition parameters, such as Ti and Al contents, the degree of reactivity α, and carbonitride formation on the structure and their mechanical properties were considered. It was detected that Cu addition to the coatings has effects on crystallite and growth column size refinement in comparison with the TiAlN and TiAlCN analogues due to its segregation along crystalline boundaries, and thus, imparts better mechanical characteristics. The hardness of TiAlCuN and TiAlCuCN coatings varies in the range of H = 25-36 GPa and Young modulus - E = 176-268 GPa. The impact strength index and the H/E* ratio, as well as the plastic deformation resistance index H3/E*2, were calculated. Due to their high mechanical properties, the formed nitride and carbonitride coatings are promising for use in space technologies.

Influence of Annealing on the Dielectric Properties of Zn-SiO2/Si Nanocomposites Obtained in "Hot" Implantation Conditions.

This paper presents the results of AC electrical measurements of Zn-SiO2/Si nanocomposites obtained by ion implantation. Implantation of Zn ions was carried out into thermally oxidized p-type silicon substrates with energy of 150 keV and fluence of 7.5 × 1016 ion·cm-2 at a temperature of 773 K, and is thus called implantation in "hot" conditions. The samples were annealed in ambient air for 60 min at 973 K. Electrical measurements of Zn-SiO2/Si nanocomposites were carried out before and after annealing. Measurements were performed in the temperature range from 20 K to 375 K. The measurement parameters were the resistance Rp, the capacitance Cp, the phase shift angle θ and the tangent of loss angle tanδ, as a function of the frequency in the range from 50 Hz to 5 MHz. Based on the characteristics σ(f) and the Jonscher power law before and after sample annealing, the values of the exponent s were calculated depending on the measurement temperature. Based on this, the conductivity models were matched. Additionally, the real and imaginary parts of the dielectric permittivity were determined, and on their basis, the polarization mechanisms in the tested material were also determined.

Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition.

In this study, silicon nitride (SiNx) thin films with different oxygen concentration (i.e., SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) substrates. Thus, the effect of oxygen concentration on film properties is able to be comparatively studied and various valuable results are obtained. In detail, x-ray reflectivity, x-ray photoelectron spectroscopy, atomic force microscopy, and spectroscopic ellipsometry are used to systematically characterize the microstructural, optical, and electrical properties of SiON film. The experimental results indicate that the surface roughness increases from 0.13 to 0.2 nm as the oxygen concentration decreases. The refractive index of the SiON film reveals an increase from 1.55 to 1.86 with decreasing oxygen concentration. Accordingly, the band-gap energy of these films determined by oxygen 1s-peak analysis decreases from 6.2 to 4.8 eV. Moreover, the I-V tests demonstrate that the film exhibits lower leakage current and better insulation for higher oxygen concentration in film. These results indicate that oxygen affects microstructural, optical, and electrical properties of the prepared SiNx film.