Control of Mooij correlations at the nanoscale in the disordered metallic Ta-nanoisland FeNi multilayers.

Localisation phenomena in highly disordered metals close to the extreme conditions determined by the Mott-Ioffe-Regel (MIR) limit when the electron mean free path is approximately equal to the interatomic distance is a challenging problem. Here, to shed light on these localisation phenomena, we studied the dc transport and optical conductivity properties of nanoscaled multilayered films composed of disordered metallic Ta and magnetic FeNi nanoisland layers, where ferromagnetic FeNi nanoislands have giant magnetic moments of 10[Formula: see text]-10[Formula: see text] Bohr magnetons ([Formula: see text]). In these multilayered structures, FeNi nanoisland giant magnetic moments are interacting due to the indirect exchange forces acting via the Ta electron subsystem. We discovered that the localisation phenomena in the disordered Ta layer lead to a decrease in the Drude contribution of free charge carriers and the appearance of the low-energy electronic excitations in the 1-2 eV spectral range characteristic of electronic correlations, which may accompany the formation of electronic inhomogeneities. From the consistent results of the dc transport and optical studies we found that with an increase in the FeNi layer thickness across the percolation threshold evolution from the superferromagnetic to ferromagnetic behaviour within the FeNi layer leads to the delocalisation of Ta electrons from the associated localised electronic states. On the contrary, we discovered that when the FeNi layer is discontinuous and represented by randomly distributed superparamagnetic FeNi nanoislands, the Ta layer normalized dc conductivity falls down below the MIR limit by about 60%. The discovered effect leading to the dc conductivity fall below the MIR limit can be associated with non-ergodicity and purely quantum (many-body) localisation phenomena, which need to be challenged further.

Magnetism of Bi2Se3 thin films with Eu-rich flat inclusions.

We report the results of experimental and theoretical studies of Eu-doped Bi2Se3 thin films with extremely inhomogeneous distribution of magnetic component. The obtained electron microscopy images suggest that Eu atoms are concentrated within platelet-like nanoinclusions. The number of inclusions grows with the increase in Eu content, x. Moreover, at relatively high x values, the stacks of platelets (inclusions located one under another) become rather frequent. A comparative analysis of magnetic properties of the films under study reveals no pronounced changes of their temperature dependence with the increase in x, which, however, leads to the decrease in the average magnetic moment [Formula: see text] per Eu atom. A theoretical analysis of different mechanisms contributing to a possible magnetic ordering in the Eu-doped films demonstrates that at small distances (i.e. within a platelet) a dominant contribution is related to the RKKY interaction via electrons in the bulk, while the ordering at inter-platelet distances is governed by magnetic dipole-dipole interaction. The latter implies the antiferromagnetic ordering within the stacks of platelets explaining a drop of [Formula: see text] per Eu atom. We employ the model of a metallic spin glass to estimate the transition temperature, characterising the interaction within the ensemble of randomly distributed magnetic platelets. This estimate gives satisfactory agreement with the experiment, even if we take into account a finite film thickness, thus, neglecting the interaction anisotropy and including only the antiferromagnetism related to the stacking. While the overall contribution of interface Dirac electrons is damped in the systems under study, we argue that the obtained results can be used for the investigation of ultrathin films with analogous impurity profile, where this contribution should be clearly pronounced.

Spin-Valley Half-Metal as a Prospective Material for Spin Valleytronics.

Half-metallicity (full spin polarization of the Fermi surface) usually occurs in strongly correlated electron systems. We demonstrate that doping a spin-density wave insulator in the weak-coupling regime may also stabilize half-metallic states. In the absence of doping, the spin-density wave is formed by four nested bands [i.e., each band is characterized by charge (electron or hole) and spin (up or down) labels]. Of these four bands, only two accumulate the charge carriers introduced by doping, forming a half-metallic two-valley Fermi surface. Depending on the parameters, the spin polarizations of the electronlike and holelike valleys may be either (i) parallel or (ii) antiparallel. The Fermi surface of (i) is fully spin polarized (similar to usual half-metals). Case (ii), referred to as "a spin-valley half-metal," corresponds to complete polarization with respect to the spin-valley operator. The properties of these states are discussed.

Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.

The anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gate-control of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHE in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured.

Anomalous multi-order Raman scattering in LaMnO3: a signature of quantum lattice effects in a Jahn-Teller crystal.

The multi-order Raman scattering is studied up to fourth order for a detwinned LaMnO3 crystal. Based on a comprehensive data analysis of the polarization-dependent Raman spectra, we show that the anomalous features in the multi-order scattering could be the sidebands on the low-energy mode at about 25 cm(-1). We suggest that this low-energy mode stems from the tunneling transition between the potential energy minima arising near the Jahn-Teller Mn(3+) ion due to the lattice anharmonicity and that the multi-order scattering is activated by this low-energy electronic motion. The sidebands are dominated by the oxygen contribution to the phonon density-of-states, however, there is an admixture of an additional component, which may arise from coupling between the low-energy electronic motion and the vibrational modes.

Formation of metallic magnetic clusters in a Kondo-lattice metal: evidence from an optical study.

Magnetic materials are usually divided into two classes: those with localised magnetic moments, and those with itinerant charge carriers. We present a comprehensive experimental (spectroscopic ellipsomerty) and theoretical study to demonstrate that these two types of magnetism do not only coexist but complement each other in the Kondo-lattice metal, Tb(2)PdSi(3). In this material the itinerant charge carriers interact with large localised magnetic moments of Tb(4f) states, forming complex magnetic lattices at low temperatures, which we associate with self-organisation of magnetic clusters. The formation of magnetic clusters results in low-energy optical spectral weight shifts, which correspond to opening of the pseudogap in the conduction band of the itinerant charge carriers and development of the low- and high-spin intersite electronic transitions. This phenomenon, driven by self-trapping of electrons by magnetic fluctuations, could be common in correlated metals, including besides Kondo-lattice metals, Fe-based and cuprate superconductors.

A stable "flat" form of two-dimensional crystals: could graphene, silicene, germanene be minigap semiconductors?

The discovery of a flat two-dimensional crystal known as graphene has contradicted Landau-Peierls-Mermin-Wagner arguments that there is no stable flat form of such crystals. Here, we show that the "flat" shape of graphene arises due to a microscopic buckling at the smallest possible interatomic scale. We show that the graphene, silicene, and other two-dimensional crystals are stable due to transverse short-range displacements of appropriate atoms. The distortions are small and form various patterns, which we describe in a framework of Ising model with competing interactions. We show that when temperature decreases, two transitions, disorder into order and order into disorder, arise. The ordered state has a form of stripes where carbon atoms are shifted regularly with respect to the plane. The flat graphene, silicene, or germanene planes look like a microscopic "washboard" with the wavelength of about couple of interatomic spacing of appropriate sublattices, which for graphene is about 1.8-3.6 Å. At lower temperatures, the ordered state transforms into a glass. Because of up-down asymmetry in buckled graphene, silicene and other two-dimensional crystals deposited on substrate, a minibandgap may arise. We derive a criterion for the minigap formation and show how it is related to the buckling and to the graphene-substrate interaction. Because of the bandgap, there may arise new phenomena and in particular a rectification of ac current induced by microwave or infrared radiation. We show that the amplitude of direct current arising at wave mixing of two harmonics of microwave electromagnetic radiation is huge. Moreover, we predict the existence of miniexcitons and a new type of fermionic minipolaritons whose behavior can be controlled by the microwave and terahertz radiation.

Collective volume plasmons in manganites with nanoscale phase separation: simulation of the measured infrared spectra of La(0.7)Ca(0.3)MnO3.

Optical characteristics of manganites with nanoscale electronic phase separation are simulated using an exact renormalization group transformation in Kirchhoff's equations. The local electric field is found to be highly inhomogeneous, exceeding the incident-wave field by orders of magnitude when the permittivities of the phases have opposite signs and plasmons are excited. The spatial scale of the field fluctuations suggests the collective character of the plasmon modes. The results of the simulation explain the optical anomalies of La(0.7)Ca(0.3)MnO(3) single crystals and films in the infrared frequency range in a natural way.

Effect of electron-lattice interaction on the phase separation in strongly correlated electron systems with two types of charge carriers.

The effect of electron-lattice interaction is studied for a strongly correlated electron system described by the two-band Hubbard model. A two-fold effect of electron-lattice interaction is taken into account: in non-diagonal terms, it changes the effective bandwidth, whereas in diagonal terms, it shifts the positions of the bands and the chemical potential. It is shown that this interaction significantly affects the doping range corresponding to the electronic phase separation and can even lead to a jump-like transition between states with different values of strains.

Phase separation in Jahn-Teller systems with localized and itinerant electrons.

The phase diagram for doped manganites and related compounds is analyzed in terms of the Kondo-lattice model taking into account an interplay between electrons localized due to lattice distortions and those in the band states. It is shown that the number of itinerant charge carriers can be significantly lower than that implied by the doping level. The competition between the homogeneous (ferromagnetic or antiferromagnetic) and phase-separated states is discussed and a strong tendency to the phase separation was revealed for a wide doping range.