Synergistic lignin degradation between Phanerochaete chrysosporium and Fenton chemistry is mediated through iron cycling and ligninolytic enzyme induction.

Removal of recalcitrant lignin from wastewater remains a critical bottleneck in multiple aspects relating to microbial carbon cycling ranging from incomplete treatment of biosolids during wastewater treatment to limited conversion of biomass feedstock to biofuels. Based on previous studies showing that the white rot fungus Phanerochaete chrysosporium and Fenton chemistry synergistically degrade lignin, we sought to determine optimum levels of Fenton addition and the mechanisms underlying this synergy. We tested the extent of degradation of lignin under different ratios of Fenton reagents and found that relatively low levels of H2O2 and Fe(II) enhanced fungal lignin degradation, achieving 80.4 ± 1.61 % lignin degradation at 1.5 mM H2O2 and 0.3 mM Fe(II). Using a combination of whole-transcriptome sequencing and iron speciation assays, we determined that at these concentrations, Fenton chemistry induced the upregulation of 80 differentially expressed genes in P. ch including several oxidative enzymes. This study underlines the importance of non-canonical, auxiliary lignin-degrading pathways in the synergy between white rot fungi and Fenton chemistry in lignin degradation. We also found that, relative to the abiotic control, P. ch. increases the availability of Fe(II) for the production of hydroxyl radicals in the Fenton reaction by recycling Fe(III) (p < 0.001), decreasing the Fe(II) inputs necessary for lignin degradation via the Fenton reaction.

Schottky Barrier Catalysis Mechanism in Metal-Assisted Chemical Etching of Silicon.

Metal-assisted chemical etching (MACE) is a versatile anisotropic etch for silicon although its mechanism is not well understood. Here we propose that the Schottky junction formed between metal and silicon plays an essential role on the distribution of holes in silicon injected from hydrogen peroxide. The proposed mechanism can be used to explain the dependence of the etching kinetics on the doping level, doping type, crystallographic surface direction, and etchant solution composition. We used the doping dependence of the reaction to fabricate a novel etch stop for the reaction.

Hybrid Metal-Semiconductor Nanostructure for Ultrahigh Optical Absorption and Low Electrical Resistance at Optoelectronic Interfaces.

Engineered optoelectronic surfaces must control both the flow of light and the flow of electrons at an interface; however, nanostructures for photon and electron management have typically been studied and optimized separately. In this work, we unify these concepts in a new hybrid metal-semiconductor surface that offers both strong light absorption and high electrical conductivity. We use metal-assisted chemical etching to nanostructure the surface of a silicon wafer, creating an array of silicon nanopillars protruding through holes in a gold film. When coated with a silicon nitride anti-reflection layer, we observe broad-band absorption of up to 97% in this structure, which is remarkable considering that metal covers 60% of the top surface. We use optical simulations to show that Mie-like resonances in the nanopillars funnel light around the metal layer and into the substrate, rendering the metal nearly transparent to the incoming light. Our results show that, across a wide parameter space, hybrid metal-semiconductor surfaces with absorption above 90% and sheet resistance below 20 Ω/□ are realizable, suggesting a new paradigm wherein transparent electrodes and photon management textures are designed and fabricated together to create high-performance optoelectronic interfaces.