Raman scattering and spectroscopic ellipsometry studies of Sb2S3 and Sb2Se3 bulk polycrystals.

Antimony sulfide (Sb2S3) and antimony selenide (Sb2Se3) compounds have attracted considerable attention for applications in different optoelectronic devices due to their notable optical and electrical properties, and due to the strong anisotropy of these properties along different crystallographic directions. However, the efficient use of these promising compounds still requires significant efforts in characterization of their fundamental properties. In the present study, Raman scattering and spectroscopic ellipsometry were used to investigate the vibrational and optical properties of Sb2Se3 and Sb2S3 bulk polycrystals grown by the modified Bridgman method. The first technique proved the presence of the desired Sb2S3 and Sb2Se3 phases in the analyzed ingots and confirmed the absence of any preferential crystallographic orientation at the measured surface of the samples. Spectroscopic ellipsometry was performed using a multi-oscillator Tauc-Lorentz dispersion model, and yielded a complex dielectric function of chalcogenides over the range 1.0-4.6 eV with a three phase model (ambient, surface and bulk materials). Finally, spectral data on the refractive index, the extinction coefficient, the absorption coefficient and the reflectivity at normal incidence, R, were obtained, which serve as a reference for the optical modeling of optoelectronic devices based on polycrystalline Sb2S3 and Sb2Se3 compounds.

Mechanisms of charge transfer and electronic properties of Cu2ZnGeS4 from investigations of the high-field magnetotransport.

Recent development of the thin film solar cells, based on quaternary compounds, has been focused on the Ge contain compounds and their solid solutions. However, for effective utilization of Cu2ZnGeS4, deeper investigations of its transport properties are required. In the present manuscript, we investigate resistivity, ρ (T), magnetoresistance and Hall effect in p-type Cu2ZnGeS4 single crystals in pulsed magnetic fields up to 20 T. The dependence of ρ (T) in zero magnetic field is described by the Mott type of the variable-range hopping (VRH) charge transfer mechanism within a broad temperature interval of ~100-200 K. Magnetoresistance contains the positive and negative components, which are interpreted by the common reasons of doped semiconductors. On the other hand, a joint analysis of the resistivity and magnetoresistance data has yielded series of important electronic parameters and permitted specification of the Cu2ZnGeS4 conductivity mechanisms outside the temperature intervals of the Mott VRH conduction. The Hall coefficient is negative, exhibiting an exponential dependence on temperature, which is quite close to that of ρ(T). This is typical of the Hall effect in the domain of the VRH charge transfer.

Polarized Raman scattering study of kesterite type Cu2ZnSnS4 single crystals.

A non-destructive Raman spectroscopy has been widely used as a complimentary method to X-ray diffraction characterization of Cu2ZnSnS4 (CZTS) thin films, yet our knowledge of the Raman active fundamental modes in this material is far from complete. Focusing on polarized Raman spectroscopy provides important information about the relationship between Raman modes and CZTS crystal structure. In this framework the zone-center optical phonons of CZTS, which is most usually examined in active layers of the CZTS based solar cells, are studied by polarized resonant and non-resonant Raman spectroscopy in the range from 60 to 500 cm(-1) on an oriented single crystal. The phonon mode symmetry of 20 modes from the 27 possible vibrational modes of the kesterite structure is experimentally determined. From in-plane angular dependences of the phonon modes intensities Raman tensor elements are also derived. Whereas a strong intensity enhancement of the polar E and B symmetry modes is induced under resonance conditions, no mode intensity dependence on the incident and scattered light polarization configurations was found in these conditions. Finally, Lyddane-Sachs-Teller relations are applied to estimate the ratios of the static to high-frequency optic dielectric constants parallel and perpendicular to c-optical axis.

Light-Induced Increase of Electron Diffusion Length in a p-n Junction Type CH3NH3PbBr3 Perovskite Solar Cell.

High band gap, high open-circuit voltage solar cells with methylammonium lead tribromide (MAPbBr3) perovskite absorbers are of interest for spectral splitting and photoelectrochemical applications, because of their good performance and ease of processing. The physical origin of high performance in these and similar perovskite-based devices remains only partially understood. Using cross-sectional electron-beam-induced current (EBIC) measurements, we find an increase in carrier diffusion length in MAPbBr3(Cl)-based solar cells upon low intensity (a few percent of 1 sun intensity) blue laser illumination. Comparing dark and illuminated conditions, the minority carrier (electron) diffusion length increases about 3.5 times from Ln = 100 ± 50 nm to 360 ± 22 nm. The EBIC cross section profile indicates a p-n structure between the n-FTO/TiO2 and p-perovskite, rather than the p-i-n structure, reported for the iodide derivative. On the basis of the variation in space-charge region width with varying bias, measured by EBIC and capacitance-voltage measurements, we estimate the net-doping concentration in MAPbBr3(Cl) to be 3-6 × 10(17) cm(-3).