In-Sn-Zn Oxide Nanocomposite Films with Enhanced Electrical Properties Deposited by High-Power Impulse Magnetron Sputtering.

In-Sn-Zn oxide (ITZO) nanocomposite films have been investigated extensively as a potential material in thin-film transistors due to their good electrical properties. In this work, ITZO thin films were deposited on glass substrates by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The influence of the duty cycle (pulse off-time) on the microstructures and electrical performance of the films was investigated. The results showed that ITZO thin films prepared by HiPIMS were dense and smooth compared to thin films prepared by direct-current magnetron sputtering (DCMS). With the pulse off-time increasing from 0 µs (DCMS) to 2000 µs, the films' crystallinity enhanced. When the pulse off-time was longer than 1000 µs, In2O3 structure could be detected in the films. The films' electrical resistivity reduced as the pulse off-time extended. Most notably, the optimal resistivity of as low as 4.07 × 10-3 Ω·cm could be achieved when the pulse off-time was 2000 µs. Its corresponding carrier mobility and carrier concentration were 12.88 cm2V-1s-1 and 1.25 × 1020 cm-3, respectively.

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: reply.

We present some comments to the paper "Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment," [Opt. Express22, A1589 (2014)].

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.

In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.