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Chalcogenide glass has achieved great success in manufacturing axial-type infrared gradient refractive index (IR-GRIN) lenses. However, studies on radial-type IR-GRIN lenses, which are more ideal for optical design, remain rare. The present study introduces what we believe to be a new method for preparing radial IR-GRIN lens by creating high refractive index (n) In2S3 nanocrystals within a 65GeS2-25In2S3-10CsCl (GIC, in molar percentage) glass matrix. Upon introduction of multi-temperature field manipulation, we have successfully achieved central crystallization and simultaneous gradient attenuation spreading toward the edge within GIC glass, providing a radial GRIN profile with Δn over 0.1 while maintaining excellent IR transparency. In addition, the optical and structural properties of the GIC GRIN samples were characterized. The relationship between Raman intensity and the n of glass ceramics at different heat treatment temperatures was investigated, thereby enabling the indirect confirmation of the presence of radial gradient crystallization within the prepared GIC GRIN samples through Raman intensity. Multiple experimental results have shown that this approach has excellent reproducibility and potential for large-scale productions.
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Skin-like thermoelectric (TE) films with temperature- and strain-sensing functions are highly desirable for human-machine interaction systems and wearable devices. However, current TE films still face challenges in achieving high flexibility and excellent sensing performance simultaneously. Herein, for the first time, a facile roll-to-roll strategy is proposed to fabricate an ultraflexible chalcogenide glass-polytetrafluoroethylene composite film with superior temperature- and strain-sensing performance. The unique reticular network of the composite film endows it with efficient Seebeck effect and flexibility, leading to a high Seebeck coefficient (731 µV/K), rapid temperature response (≈0.7 s), and excellent strain sensitivity (gauge factor = 836). Based on this high-performance composite film, an intelligent robotic hand for action feedback and temperature alarm is fabricated, demonstrating its great potential in human-machine interaction. Such TE film fabrication strategy not only brings new inspiration for wearable inorganic TE devices, but also sets the stage for a wide implementation of multifunctional human-machine interaction systems.
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Wearable thermal sensors based on thermoelectric (TE) materials with high sensitivity and temperature resolution are extensively used in medical diagnosis, human-machine interfaces, and advanced artificial intelligence. However, their development is greatly limited by the lack of materials with both a high Seebeck coefficient and superior anticrystallization ability. Here, a new inorganic amorphous TE material, Ge15Ga10Te75, with a high Seebeck coefficient of 1109 µV/K is reported. Owing to the large difference between the glass-transition temperature and initial crystallization temperature, Ge15Ga10Te75 strongly inhibits crystallization during fiber fabrication by thermally codrawing a precast rod comprising a Ge15Ga10Te75 core and PP polymer cladding. The temperature difference can be effectively transduced into electrical signals to achieve TE fiber thermal sensing with an accurate temperature resolution of 0.03 K and a fast response time of 4 s. It is important to note that after the 1.5 and 5.5 K temperatures changed repeatedly, the TE properties of the fiber demonstrated high stability. Based on the Seebeck effect and superior flexibility of the fibers, they can be integrated into a mask and wearable fabric for human respiration and body temperature monitoring. The superior thermal sensing performance of the TE fibers together with their natural flexibility and scalable fabrication endow them with promising applications in health-monitoring and intelligent medical systems.
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Rare-earth doped chalcogenide films are major components in flexible and integrated photonic and optoelectronic devices for modern communication systems, metrology, and optical sensing. However, it is still challenging to develop a high concentration of rare-earth doping chalcogenide film with a smooth surface to realize efficient photoluminescence (PL). Here, we demonstrate that Er3+-doped GeS2 films are prepared by spin-coating based on a two-step dissolution process. Such a two-step process provides the high solubility of Er3+ in GeS2 films and exhibits efficient emission at â¼1.5â µm crossing the telecommunication C-band. The highest PL emission intensity is obtained in GeS2 films doped with 1.4â mol% of Er3+, and this PL in GeS2 films is reported for the first time. We propose adjustments of annealing parameters for improving the PL characteristics in such materials. Through the control precision of the heating rate and annealing temperature, the smooth surface of GeS2 films enables efficient photo-luminescence. This two-step dissolution-based strategy would pave a new path to design luminescent chalcogenide films for application in flexible and integrated optoelectronics and photonics.
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Materials based on group IV chalcogenides, are considered to be one of the most promising materials for high-performance, broadband photodetectors due to their wide bandgap coverage, intriguing chemical bonding and excellent physical properties. However, the reported photodetectors based on SnS are still worked at relatively narrow near-infrared band (as far as 1550â nm) hampered by the nonnegligible bandgap of 1.1-1.5â eV. Here, a novel photodetector based on Te alloyed SnS thin film was demonstrated with an ultra-broadband response up to 10.6â µm. By controlling the Te alloyed concentration in SnS increasing to 37.64%, the bandgap narrows to 0.23â eV, exhibiting a photoresponse potential at long-wavelength infrared excitation. Our results show Te-alloying can remarkably enhance the detection properties of SnS/Te photodetectors. The photoresponsivity and detectivity of 1.59â mA/W and 2.3 × 108 Jones were realized at 10.6â µm at room temperature. Moreover, the nonzero photogain was observed generated by nonlinearly increased photocurrent density, resulting in a superlinear dependency between photoresponsivity and light intensity. Our studies successfully broaden photoresponse spectrum of SnS toward the mid-infrared range for the first time. It also suggests that alloying is an effective technique for tuning the band edges of group IV chalcogenides, contributing deep implications for developing future optoelectronic applications.
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The all-solid-state sodium battery has emerged as a promising candidate for energy storage. However, the limited electrochemical stability of the solid electrolyte, particularly in the presence of Na metal at the anode, along with low ionic conductivity, hinders its widespread application. In this work, the design of P and O elements in Na3SbS4 solid electrolyte was investigated through a series of structural tests and characterizations. The electrochemical stability was remarkably improved in the Na/Na3SbP0.16S3.6O0.4/Na battery, exhibiting a stability of 260 h under a current of 0.1 mA cm-2. Additionally, the room temperature conductivity of Na3SbP0.16S3.6O0.4 was enhanced to 3.82 mS cm-1, maintaining a value comparable to commercial standards. The proposed design strategy provides an approach for developing sodium ion solid-state batteries with high energy density and long lifespan. The stability of the solid electrolyte interface at the Na | solid electrolyte interface proves critical for the successful assembly of all-solid-state sodium ion batteries.
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Good-performing sodium solid electrolytes (SSEs) are essential for constructing all-solid-state sodium-ion batteries operating at ambient temperature. Sulfide solid electrolyte, Na3SbS4 (NBS), an excellent SSE with good chemical stability in humid air, can be synthesized with low-cost processing. However, Na3SbS4-based electrolytes with liquid-phase synthesis exhibit conductivities below milli-Siemens per centimeter. Thus, a series of halogen-doped samples formulated as Na3-xSbS4-xMx (0 ≤ x ≤ 0.3, M = Cl, Br, and I) were experimentally prepared in this study using the solid-state method to improve the battery performance. X-ray diffraction with refinement analysis and Raman spectroscopy were employed to understand deeply the connection between the crystal structure and conductivity of Na+ ions. In addition, symmetric sodium batteries with Na2.85SbS3.85Br0.15 were tested at room temperature, and pristine Na3SbS4 was used as the control group. The result showed that the symmetric sodium battery assembled with the Na2.85SbS3.85Br0.15 electrolyte can stably cycle for longer than 100 h at a current density of 0.1 mA/cm2. This research provides a method to manufacture novel SSEs by elaborating the effect of halogen doping in NBS.
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The fabrication of all electrolytes from noncombustible ceramic materials offers a superior option for providing safer and higher-capacity batteries to fulfill future energy needs. To achieve a competitive performance with combustible liquid electrolytes used in commercial Li-ion batteries, the creation of ceramic material compositions with a high electrical conductivity is necessary. Here, we report that co-doping with W and halogens results in a superconductivity of 13.78 mS cm-1 in a cubic-phase Na3SbS4 glass ceramic electrolyte. After undergoing high-temperature heat treatments, the W ions in the electrolyte can facilitate the replacement of S atoms with halogens, introducing many Na vacancies. The samples also had a high degree of cycling stability. An excellent glass ceramic electrolyte for Na ion batteries will be constructed for Na3SbW0.25Cl0.25S4.
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Fiber-based inorganic thermoelectric (TE) devices, owing to the small size, light-weight, flexibility, and high TE performance, are promising for applications in flexible thermoelectrics. Unfortunately, current inorganic TE fibers are strictly constrained by limited mechanical freedom because of the undesirable tensile strain, typically limited to a value of 1.5%, posing a strong obstacle for further application in large-scale wearable systems. Here, a superflexible Ag2 Te0.6 S0.4 inorganic TE fiber is demonstrated that provides a record tensile strain of 21.2%, such that it enables various complex deformations. Importantly, the TE performance of the fiber shows high stability after ≈1000 cycles of bending and releasing processes with a small bending radius of 5 mm. This allows for the integration of the inorganic TE fiber into 3D wearable fabric, yielding a normalized power density of 0.4 µW m-1 K-2 under the temperature difference of 20 K, which is approaching the high-performance Bi2 Te3 -based inorganic TE fabric and is nearly two orders of magnitude higher than the organic TE fabrics. These results highlight that the inorganic TE fiber with both superior shape-conformable ability and high TE performance may find potential applications in wearable electronics.
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Chalcogenide glass has become one of the essential IR lens materials in passively athermalized long-wave IR devices. However, that there is no multispectral chalcogenide glass capable of large-size fabrication raises challenges to the development and popularization of multispectral imaging systems combining visible, near-IR, and mid-IR. In this work, we developed a novel chalcogenide glass capable of a record-big (Ø120â mm) fabrication through the compositional optimization of GeS2-Ga2S3-CsCl glass with introduction of Sb2S3. Its transmission window is characterized as ranging from 0.51 to 11.2 µm, which means it could be employed as a multispectral lens transmitting visible and IR signals in a co-aperture IR optical system. In addition, a method of three-stage thermal analysis is proposed to evaluate the glass-forming ability of chalcogenide glass through simulating the melt-quenching process of chalcogenide melt in a vacuum-sealed silica ampoule. This work not only shows an innovative multispectral chalcogenide glass with promising applications but also introduces a simple and convenient technique for screening chalcogenide glass with ultrahigh glass-forming ability capable of large-size fabrication.
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Chalcogenide solid-state electrolytes (SEs) have been regarded as promising candidates for lithium dendrite suppression due to their high ionic conductivity, suitable mechanical strength, and large Li+ ion transference number. However, the wide applications of SEs in pragmatic all-solid-state batteries are still retarded by their limited interface stability, which leads to lithium dendrite growth and formation of interphase with high resistance. In addition, the interphase evolution mechanism between SEs and metallic Li anodes remains unclear. Herein, this work demonstrates that the interfacial stability of Li2S-SiS2-P2S5 SEs can be effectively enhanced by tuning the interphase through LiI incorporation. This strategy contributes to a high ionic conductivity of the SEs and electronic insulation interphase containing LiI. Thus, the 70(60Li2S-28SiS2-12P2S5)-30 LiI SEs prepared by melt-quenching exhibit a high ionic conductivity of 1.74 mS cm-1 at room temperature and a larger critical current density of 1.65 mA cm-2 at 65 °C. The cycling life of the symmetric Li|SEs|Li cell is up to 200 h without significant resistance growth at 0.1 mA cm-2 at room temperature. This enhanced interface stability is revealed to originate from the in situ-formed LiI within the interphase, which prevents continual SEs degradation and suppresses lithium dendrite growth. This work provides a vital understanding of interphase evolution, which is valuable for designing SEs with long cycling stability.
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The nonlinear optical properties of emerging metal halide perovskites (MHP) materials are sufficiently intriguing that this topic has become the hotspots in the realm of material science. Hence, we investigate the third-order nonlinear optical properties of CsPbBrx/I3-x (x = 1, 2, 3) MHP nano-crystals (NCs) embedded chalcogenide glass (ChG) within a GeS2-Sb2S3 pseudo-binary system, by monitoring the composition, excitation wavelength and intensity dependencies via femtosecond Z-scan technique. We have found that the intrinsic large optical nonlinearity of ChG can be further enhanced because of the incorporation of MHP NCs, and that the optical nonlinearity of MHP-ChG containing pristine Br NCs is more pronounced compared to its counterparts with mixed Br/I NCs, due to a combination of multiple factors.
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BACKGROUND: Trigeminal neuralgia (TN) is a neuropathic pain that occurs in branches of the trigeminal nerve. MicroRNAs (miRNAs) have been considered key mediators of neuropathic pain. This study was aimed to elucidate the pathophysiological function and mechanisms of miR-223-3p in mouse models of TN. METHODS: Infraorbital nerve chronic constriction injury (CCI-ION) was applied in male C57BL/6J mice to establish mouse models of TN. Pain responses were assessed utilizing Von Frey method. The expression of miR-223-3p, MKNK2, and MAPK/ERK pathway protein in trigeminal ganglions (TGs) of CCI-ION mice was measured using RT-qPCR and Western blotting. The concentrations of inflammatory cytokines were evaluated using Western blotting. The relationship between miR-223-3p and MKNK2 was tested by a luciferase reporter assay. RESULTS: We found that miR-223-3p was downregulated, while MKNK2 was upregulated in TGs of CCI-ION mice. MiR-223-3p overexpression by an intracerebroventricular injection of Lv-miR-223-3p attenuated trigeminal neuropathic pain in CCI-ION mice, as well as reduced the protein levels of pro-inflammatory cytokines in TGs of CCI-ION mice. MKNK2 was verified to be targeted by miR-223-3p. Additionally, miR-223-3p overexpression decreased the phosphorylation levels of ERK1/2, JNK, and p38 protein in TGs of CCI-ION mice to inhibit MAPK/ERK signaling. CONCLUSIONS: Overall, miR-223-3p attenuates the development of TN by targeting MKNK2 to suppress MAPK/ERK signaling.
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MicroRNAs , Neuralgia , Neuralgia do Trigêmeo , Animais , Citocinas , Modelos Animais de Doenças , Sistema de Sinalização das MAP Quinases , Masculino , Camundongos , Camundongos Endogâmicos C57BL , MicroRNAs/metabolismo , Proteínas Serina-Treonina Quinases , Neuralgia do Trigêmeo/genéticaRESUMO
Spectral fitting method (SFM) was proposed to obtain the refractive index (RI) and thickness of chalcogenide films based on transmission spectra. It extended the Swanepoel method to the films on the order of hundreds of nanometers in thickness. The RI and thickness of the films can be obtained quickly and accurately by using the SFM based on the transmission spectrum with only one peak and valley. The method's reliability theoretically was evaluated by simulation analysis. The results showed that the accuracy of the RI and thickness was better than 0.2% by using the SFM regardless of thin or thick film. Finally, the RI and thickness of the new ultralow loss reversible phase-change material Sb2Se3 films were obtained experimentally by the SFM. This work should provide a useful guideline for obtaining the RI and thickness of the transparent optical films.
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Tunable broadband near-infrared (NIR)-luminescent materials play a crucial role as light sources and tunable fiber lasers in modern technologies such as high-capacity telecommunication, imaging, and remote sensing. Despite considerable effort in studying the luminescent materials doped with rare-earth or transition metal ions, it is still challenging to achieve tunable broadband emission in photonic materials, especially in glasses, for active-fiber applications. In the present work, such NIR emission is achieved by modifying oxygen-deficient structural defects (i.e., singly ionized oxygen vacancies (VOâ) in tellurium (Te)-doped germanate glass). The local glass chemistry around Te is controlled by engineering singly ionized oxygen vacancies (VOâ) in alkali-alumino-germanate glass. This enables fine-tuning of the configurations and chemical states of Te centers over a wide range of chemical states, from ionic states to neutrally charged clusters and to positively charged clusters, resulting in various intriguing luminescent behaviors (e.g., wavelength-tunable emission, great emission enhancement, bandwidth extension).
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This publisher's note contains a correction to Opt. Lett.45, 4984 (2020)OPLEDP0146-959210.1364/OL.402229.
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The photonic properties of glass ceramics (GCs) are often enabled by encapsulating nanocrystals (NCs) and doped transition metal ions (TMIs). However, it is difficult to probe the optics-related effect between the host NCs' band structure and doped TMIs' d-d orbitals. Herein, perovskite-type KZnF3:NiNCs in KF-ZnF2-SiO2 GCs were prepared and taken as a model system. The excited-state dynamics of host NCs and Ni ions' d-d orbitals were studied by transient absorption spectroscopy. It presents a strong interaction between Ni's d orbitals and the band edge, which could extract excitonic energy in photonic applications. These findings facilitate understanding and design of TMIs-doped GCs in real-life photonic applications.
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Glass ceramics (GCs), which consist essentially of a homogeneous solid state dispersion of nanocrystals (NCs) embedded in a chemically inert and mechanically robust glass matrix, appear to be an extremely promising class of solid state materials that can be easily tailored into arbitrary shapes, including a new generation of optical fibers, for efficient incoherent and coherent sources of mid-infrared (MIR) light emission. This unique capability not only stems from the fact that one can tailor the underlying glass matrix for optimal macroscopic physical properties and ultrahigh transparency at the wavelengths of interest (resulting in appropriate "transparent glass ceramics" or TGCs), but also stems from the fact that one can embed these matrices with size and structure-tailored NCs, which in turn can be doped with relatively high concentrations of MIR emitting rare-earth or transition metal ions. This potential is tantamount to the localization of these highly efficient MIR ionic emitters into carefully selected and highly favorable "process-engineered" custom crystalline host "nanocages," while insulating the ionic emitters from the emission-quenching glass host matrix, the latter being chosen largely because of its highly favorable macroscopic bulk properties, including its ductility and formability into near-arbitrary shapes (at appropriate temperatures). Such MIR TGCs appear to be very promising for numerous photonics applications, including compact and relatively efficient waveguide sensors, broadband incoherent MIR light sources, superluminescent light sources, advanced fiber-optic devices, and broadly wavelength-tunable and ultrashort pulse mode-locked fiber and bulk solid-state lasers. In this paper, we review past achievements in this field, starting with an overview of TGCs, followed by discussions of currently preferred methods of fabrication, characterization, and optimization of suitably doped oxyfluoride, tellurite, and chalcogenide TGCs and of our projections of anticipated future developments in this field at both the materials and device levels.
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Encapsulation of halide perovskites into a transparent solid medium is important for increasing their stability and rendering the exploration of new optoelectronic applications. Here, we describe a glassy flux protocol to confine lead-free cesium tin halide (CsSnX3) perovskite nanocrystals into a transparent chalcogenide glassy matrix by capitalizing on judiciously designed germanium-antimony-sulfur chalcogenide flux as a solvent to dissolve and recrystallize the target crystal phases. We show that CsSnX3 nanocrystals can be obtained in the form of a spherical shape, single crystalline, and with an arbitrary halide ratio through the use of cesium halide and tin(II) halide at precisely defined concentrations. The grain size and size distribution of CsSnX3 nanocrystals are rationally tuned by Ostwald-ripening-controlled crystallization of CsSnX3 supersaturated metastable glasses. The present work suggests that the traditional flux technique could be adopted inversely for materials discovery of new nanocomposites through a simple protocol of the dissolution of target nanocrystals into an inert transparent glassy flux.
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The societal impact of extreme winds induced by tropical cyclones (TCs) is a major concern in the Mekong River Basin (MRB). Though no clear trend of landfalling TC intensity along the Vietnam coastline has been observed since the 1970s, climate models project an increasing TC intensity in the 21st century over the Western North Pacific, which is the primary TC source region influencing the MRB. Yet, how future TC activities will affect extreme winds quantitatively in the MRB remains unclear. By employing a novel dynamical downscaling technique using a specialized, coupled ocean-atmospheric model, shorter return periods of maximum wind speed in the MRB for 2081-2100 compared with 1981-2000 are projected based on five global climate models under the RCP8.5 scenario, suggesting increases in the future tropical cyclone intensity. The results point to consistently elevated future TC-related risks that may jeopardize sustainable development, disrupt food supply, and exacerbate conflicts in the region and beyond.