Supermode Hybridization: A Material-Independent Route toward Record Schottky Detection Sensitivity Using <0.05 µm3 Amorphous Absorber Volume.

Schottky photodetectors are attractive for CMOS-compatible photonic integrated circuits, but the inability to simultaneously optimize the metal emitter thickness for photon absorption and hot carrier emission limits the detection efficiency and sensitivity. Here, we propose and experimentally demonstrate a supermode hybridization waveguiding effect that can overcome the trade-off. By introducing structural asymmetry into coupled plasmonic nanostructures, hybridization-induced field enhancement can help ultrathin metal emitters to achieve greater optical absorption than bulk counterparts. Despite the use of amorphous materials with higher transport losses, our hybridized Schottky detectors demonstrate higher responsivity per device volume compared to crystalline-based and unhybridized Schottky designs with broadband (1.5-1.6 µm) and athermal (15-100 °C) behavior as well as record sensitivity of -55 dBm that approaches Ge counterparts that are 36 times larger. The hybridization effect can be utilized across diverse nanomaterial platforms to facilitate light-matter interaction, paving the way toward backend-compatible, chip-integrated photonics with greater manufacturing flexibility.

Monolithic Plasmonic Waveguide Architecture for Passive and Active Optical Circuits.

Guided-wave plasmonic circuits are promising platforms for sensing, interconnection, and quantum applications in the subdiffraction regime. Nonetheless, the loss-confinement trade-off remains a collective bottleneck for plasmonic-enhanced optical processes. Here, we report a unique plasmonic waveguide architecture that can alleviate such trade-off and improve the efficiencies of plasmonic-based emission, light-matter-interaction, and detection simultaneously. Specifically, record experimental attributes such as normalized Purcell factor approaching 104, 10 dB amplitude modulation with <1 dB insertion loss and fJ-level switching energy, and photodetection sensitivity and internal quantum efficiency of -54 dBm and 6.4% respectively have been realized within our amorphous-based, coupled-mode plasmonic structure. The ability to support multiple optoelectronic phenomena while providing performance gains over existing plasmonic and dielectric counterparts offers a clear path toward reconfigurable, monolithic plasmonic circuits.