Prediction of superconductivity in metallic boron-carbon compounds from 0 to 100 GPa by high-throughput screening.

Boron-carbon compounds have been shown to have feasible superconductivity. In our earlier paper [Zheng et al., Phys. Rev. B, 2023, 107, 014508], we identified a new conventional superconductor of LiB3C at 100 GPa. Here, we aim to extend the investigation of possible superconductivity in this structural framework by replacing Li atoms with 27 different cations from periods 3, 4, and 5 under pressures ranging from 0 to 100 GPa. Using the high-throughput screening method of zone-center electron-phonon interaction, we found that ternary compounds like CaB3C, SrB3C, TiB3C, and VB3C are promising candidates for superconductivity. The consecutive calculations using the full Brillouin zone confirm that they have a Tc of <31 K at moderate pressures. Our study demonstrates that fast screening of superconductivity by calculating zone-center electron-phonon coupling strength is an effective strategy for high-throughput identification of new superconductors.

Role of Native Defects in Fe-Doped ß-Ga2O3.

Iron impurities are believed to act as deep acceptors that can compensate for the n-type conductivity in as-grown Ga2O3, but several scientific issues, such as the site occupation of the Fe heteroatom and the complexes of Fe-doped ß-Ga2O3 with native defects, are still lacking. In this paper, based on first-principle density functional theory calculations with the generalized gradient approximation approach, the controversy regarding the preferential Fe incorporation on the Ga site in the ß-Ga2O3 crystal has been addressed, and our result demonstrates that Fe dopant is energetically favored on the octahedrally coordinated Ga site. The structural stabilities are confirmed by the formation energy calculations, the phonon dispersion relationships, and the strain-dependent analyses. The thermodynamic transition level Fe3+/Fe2+ is located at 0.52 eV below the conduction band minimum, which is consistent with Ingebrigtsen's theoretical conclusion, but slightly smaller than some experimental values between 0.78 eV and 1.2 eV. In order to provide direct guidance for material synthesis and property design in Fe-doped ß-Ga2O3, the defect formation energies, charge transitional levels, and optical properties of the defective complexes with different kinds of native defects are investigated. Our results show that VGa and Oi can be easily formed for the Fe-doped ß-Ga2O3 crystals under O-rich conditions, where the +3 charge state FeGaGai and -2 charge state FeGaOi are energetically favorable when the Fermi level approaches the valence and conduction band edges, respectively. Optical absorption shows that the complexes of FeGaGai and FeGaVGa can significantly enhance the optical absorption in the visible-infrared region, while the energy-loss function in the ß-Ga2O3 material is almost negligible after the extra introduction of various intrinsic defects.

Effects of Cu, Zn Doping on the Structural, Electronic, and Optical Properties of α-Ga2O3: First-Principles Calculations.

The intrinsic n-type conduction in Gallium oxides (Ga2O3) seriously hinders its potential optoelectronic applications. Pursuing p-type conductivity is of longstanding research interest for Ga2O3, where the Cu- and Zn-dopants serve as promising candidates in monoclinic ß-Ga2O3. However, the theoretical band structure calculations of Cu- and Zn-doped in the allotrope α-Ga2O3 phase are rare, which is of focus in the present study based on first-principles density functional theory calculations with the Perdew-Burke-Ernzerhof functional under the generalized gradient approximation. Our results unfold the predominant Cu1+ and Zn2+ oxidation states as well as the type and locations of impurity bands that promote the p-type conductivity therein. Furthermore, the optical calculations of absorption coefficients demonstrate that foreign Cu and Zn dopants induce the migration of ultraviolet light to the visible-infrared region, which can be associated with the induced impurity 3d orbitals of Cu- and Zn-doped α-Ga2O3 near the Fermi level observed from electronic structure. Our work may provide theoretical guidance for designing p-type conductivity and innovative α-Ga2O3-based optoelectronic devices.

In-depth insights into polarization-dependent light extraction mechanisms of AlGaN-based deep ultraviolet light-emitting diodes.

The AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) dominated by transverse-magnetic (TM) polarized emission suffer from extremely poor light extraction efficiency (LEE) from their top surface, which severely limits the device performance. In this study, the underlying physics of polarization-dependent light extraction mechanisms of AlGaN-based DUV LEDs has been explored in depth via simple Monte Carlo ray-tracing simulations with Snell's law. It is especially worth noting that the structures of the p-type electron blocking layer (p-EBL) and multi-quantum wells (MQWs) have a significant impact on light extraction behavior, especially for TM-polarized emission. Thus, an artificial vertical escape channel (named GLRV) has been constructed to efficiently extract the TM-polarized light through the top surface, by adjusting the structures of the p-EBL, MQWs, sidewalls, and using the adverse total internal reflection in a positive manner. The results show that the enhancement times of the top-surface LEE is up to 18 for TM-polarized emission in the 300 × 300 µm2 chip comprising a single GLRV structure, and further increases to 25 by dividing this single GLRV structure into a 4 × 4 micro-GLRV array structure. This study provides a new perspective for understanding and modulating the extraction mechanisms of polarized light to overcome the inherently poor LEE for the TM-polarized light.

Two dimensional twin T-graphene: monolayer for visible-light photocatalytic water splitting and bulk for anode material of magnesium batteries.

Two-dimensional (2D) carbon allotropes with all-sp2-hybridization have demonstrated great potential in nano-photoelectric devices, but the application of semiconductor photocatalysts for water splitting and anodes in magnesium batteries remains unoptimistic. Motivated by this, we theoretically study a highly stable all-sp2-hybridized 2D carbon allotrope twin T-graphene (TTG) via first-principles simulations. And through the calculations of the HSE06 functional, we find that TTG has a wide bandgap (2.70 eV) and suitable band edge positions satisfying the criteria of photocatalysts for overall water splitting. Additionally, TTG exhibits excellent photocatalytic properties for overall water splitting reflecting a high STH efficiency (12.34%), strong absorption coefficient in the visible-light region and the carrier mobility being high for electrons but low for holes. By investigating the strain effects, we get that, with biaxial compressive strain, the ability of overall photocatalytic water splitting can be effectively improved including STH up to ∼30%. Moreover, the bulk TTG also exhibits great potential as an anode material of magnesium batteries with a theoretical capacity of 556 mA h g-1, average voltage of 0.74 V and diffusion energy barrier of ∼0.96 eV. Our results would broaden the application of all-sp2-hybridized 2D carbon allotropes in the semiconductor photocatalytic and magnesium batteries field.

Aqueous Solution-Grown Crystalline Phosphorus Doped Indium Oxide for Thin-Film Transistors Applications.

Solution-grown indium oxide (In2O3) based thin-film transistors (TFTs) hold good prospects for emerging advanced electronics due to their excellent mobility, prominent transparency, and possibility of low-cost and scalable manufacturing; however, pristine In2O3 TFTs suffer from poor switching characteristics due to intrinsic oxygen-vacancy-related defects and require external doping. According to Shanmugam's theory, among potential dopants, phosphorus (P) has a large dopant-oxygen bonding strength (EM-O) and high Lewis acid strength (L) that would suppress oxygen-vacancy related defects and mitigate dopant-induced carrier scattering; however, P-doped In2O3 (IPO) TFTs have not yet been demonstrated. Here, we report aqueous solution-grown crystalline IPO TFTs for the first time. It is suggested that the incorporation of P could effectively inhibit oxygen-vacancy-related defects while maintaining high mobility. This work experimentally demonstrates that dopant with high EM-O and L is promising for emerging oxide TFTs.

Water-Induced Nanometer-Thin Crystalline Indium-Praseodymium Oxide Channel Layers for Thin-Film Transistors.

We report water-induced nanometer-thin crystalline indium praseodymium oxide (In-Pr-O) thin-film transistors (TFTs) for the first time. This aqueous route enables the formation of dense ultrathin (~6 nm) In-Pr-O thin films with near-atomic smoothness (~0.2 nm). The role of Pr doping is investigated by a battery of experimental techniques. It is revealed that as the Pr doping ratio increases from 0 to 10%, the oxygen vacancy-related defects could be greatly suppressed, leading to the improvement of TFT device characteristics and durability. The optimized In-Pr-O TFT demonstrates state-of-the-art electrical performance with mobility of 17.03 ± 1.19 cm2/Vs and on/off current ratio of ~106 based on Si/SiO2 substrate. This achievement is due to the low electronegativity and standard electrode potential of Pr, the high bond strength of Pr-O, same bixbyite structure of Pr2O3 and In2O3, and In-Pr-O channel's nanometer-thin and ultrasmooth nature. Therefore, the designed In-Pr-O channel holds great promise for next-generation transistors.

Performance Analysis of a Proton Exchange Membrane Fuel Cell Based Syngas.

External chemical reactors for steam reforming and water gas shift reactions are needed for a proton exchange membrane (PEM) fuel cell system using syngas fuel. For the preheating of syngas and stable steam reforming reaction at 600 °C, residual hydrogen from a fuel cell and a certain amount of additional syngas are burned. The combustion temperature is calculated and the molar ratio of the syngas into burner and steam reformer is determined. Based on thermodynamics and electrochemistry, the electric power density and energy conversion efficiency of a PEM fuel cell based syngas are expressed. The effects of the temperature, the hydrogen utilization factor at the anode, and the molar ratio of the syngas into burner and steam reformer on the performance of a PEM fuel cell are discussed. To achieve the maximum power density or efficiency, the key parameters are determined. This manuscript presents the detailed operating process of a PEM fuel cell, the allocation of the syngas for combustion and electric generation, and the feasibility of a PEM fuel cell using syngas.