Emulation of biphasic plasticity in retinal electrical synapses for light-adaptive pattern pre-processing.

Electrical synapses provide rapid, bidirectional communication in nervous systems, accomplishing tasks distinct from and complementary to chemical synapses. Here, we demonstrate an artificial electrical synapse based on second-order conductance transition (SOCT) in an Ag-based memristor for the first time. High-resolution transmission electron microscopy indicates that SOCT is mediated by the virtual silver electrode. Besides the conventional chemical synaptic behaviors, the biphasic plasticity of electrical synapses is well emulated by integrating the device with a photosensitive element to form an optical pre-processing unit (OPU), which contributes to the retinal neural circuitry and is adaptive to ambient illumination. By synergizing the OPU and spiking neural network (SNN), adaptive pattern recognition tasks are accomplished under different light and noise settings. This work not only contributes to the further completion of synaptic behaviour for hardware-level neuromorphic computing, but also potentially enables image pre-processing with light adaptation and noise suppression for adaptive visual recognition.

Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering.

A resistive switching device with inherent nonlinear characteristics through a delicately engineered interfacial layer is an ideal component to be integrated into passive crossbar arrays for the suppression of sneaking current, especially in ultra-dense 3D integration. In this paper, we demonstrated a TaOx-based bipolar resistive switching device with a nearly symmetrical bi-directional nonlinear feature through interface engineering. This was accomplished by introducing an ultra-thin interfacial layer (SiO2-x) with unique features, including a large band gap and a certain level of negative heat of oxide formation between the top electrode (TiN) and resistive layer (TaOx). The devices exhibit excellent nonlinear property under both positive and negative bias. Modulation of the inherent nonlinearity as well as the resistive switching mechanism are comprehensively studied by scrutinizing the results of the experimental control groups and the extensive characterizations including detailed compositional analysis, which suggests that the underlying mechanism of the nonlinear behavior is associatively governed by the serially connected metallic conductive filament and Flower-Nordheim tunneling barrier formed by the SiO2-x interface layer. The proposed device in this work has great potential to be implemented in future massive storage memory applications of high-density selector-free crossbar structure.